2sd1781 SeCoS Halbleitertechnologie GmbH, 2sd1781 Datasheet
2sd1781
Manufacturer Part Number
2sd1781
Description
0.8a, 40v Npn Silicon Plastic Encapsulated Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.2SD1781.pdf
(3 pages)
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http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
FEATURES
CLASSIFICATION OF h
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Very low V
Complements to 2SB1197
(I
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
C
Product-Rank
/I
B
Package
Marking
SOT-23
Range
= 500mA / 50mA)
Elektronische Bauelemente
CE
Parameter
Parameter
(sat).V
CE
2SD1781-Q
(sat) < 0.4 V (Typ.)
120 ~ 270
MPQ
AFQ
3K
FE
Symbol
V
A suffix of “-C” specifies halogen & lead-free
BV
BV
BV
I
I
2SD1781-R
LeaderSize
(T
CE(sat)
C
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
ob
A
180 ~ 390
(T
7’ inch
= 25°C unless otherwise noted)
A
AFR
= 25°C unless otherwise noted)
Symbol
T
RoHS Compliant Product
V
V
J
V
, T
P
I
CBO
CEO
EBO
C
C
Min.
STG
120
40
32
5
-
-
-
-
-
Emitter
Typ.
150
10
-
-
-
-
-
-
-
NPN Silicon Plastic Encapsulated Transistor
150, -55~150
Collector
Max.
Ratings
390
Base
0.5
0.5
0.4
-
-
-
-
-
200
0.8
40
32
5
K
F
Unit
MHz
2SD1781
pF
Any changes of specification will not be informed individually.
REF.
V
V
V
V
A
A
0.8A, 40V
C
D
A
B
E
F
1
Top View
E
A
3
Min.
2.80
2.25
1.20
0.90
1.80
0.30
I
I
I
V
V
I
I
V
V
L
C
C
E
C
C
Millimeter
CB
EB
CE
CB
= 50
= 50
= 1mA, I
= 100mA, V
= 500mA, I
2
= 5V, I
= 10V, I
= 4V, I
= 20V, I
G
Max.
Test Conditions
SOT-23
3.00
2.55
1.40
1.15
C B
2.00
0.50
A, I
A, I
D
C
C
B
C
E
E
= 50mA, f = 100MHz
E
= 0
= 0
= 0, f = 1.0MHz
= 0
= 0
= 0
B
REF.
CE
Unit
H
= 50mA
G
H
K
J
L
mW
°C
V
V
V
A
= 3V
1
Min.
0.08
Millimeter
0.10 REF.
0.55 REF.
0.95 TYP.
0.5 REF.
2
Page 1 of 3
Max.
0.15
3
J
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2sd1781 Summary of contents
Page 1
... Symbol Min. Typ. Max CBO CEO EBO CBO EBO h 120 - 390 CE(sat 150 2SD1781 0.8A, 40V SOT- Top View Millimeter REF. REF. Min. Max. A 2.80 3. 2.25 2.55 H C 1.20 1. 0.90 1. 1.80 2 ...
Page 2
... Elektronische Bauelemente CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page ...
Page 3
... Elektronische Bauelemente CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 30-Dec-2010 Rev. A 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page ...