2sd1468 Jiangsu Changjiang Electronics Technology Co., Ltd., 2sd1468 Datasheet

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2sd1468

Manufacturer Part Number
2sd1468
Description
Transistor Npn
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet

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2SD1468
FEATURES
MAXIMUM RATINGS (T
V
V
V
I
P
T
T
ELECTRICAL CHARACTERISTICS (T
C
Symbol
j
stg
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
Rank
Range
CBO
CEO
EBO
C
Low saturation voltage
Ideal for low voltage, high current dribes
High DC current gain and high current
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
TRANSISTOR (NPN)
Parameter
a
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
=25℃ unless otherwise noted)
TO-92 Plastic-Encapsulate Transistors
FE
120-270
Q
a
=25℃ unless otherwise specified)
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
h
CBO
EBO
f
FE
T
ob
-55-150
Value
625
150
30
15
5
1
I
I
I
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CB
=50μA, I
=50μA, I
=1mA, I
=500mA, I
=20V, I
=4V, I
=3V, I
=5V, I
=10V, I
Test
C
C
C
B
E
C
=0
=0
=100mA
=50mA, f=100MHz
E
E
=0
=0
=0
=0, f=1MHz
Unit
B
=50mA
W
V
V
V
A
conditions
180-390
R
TO-92
1.
2.COLLECTOR
3. BASE
EMITTER
Min
120
30
15
50
5
Typ
270-560
S
Max
560
0.5
0.5
0.4
30
A,May,2011
MHz
Unit
μA
μA
pF
V
V
V
V

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