sip41111 Vishay, sip41111 Datasheet
sip41111
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sip41111 Summary of contents
Page 1
... V/2 A Peak, Low Cost, High Frequency Half Bridge Driver DESCRIPTION SiP41111 is the MOSFET driver, which is designed to sim- plify the converter design for the topologies, which requires the high-side switch such as half bridge, two switch forward and active clamping forward. The high-side and low-side ...
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... SiP41111 Vishay Siliconix BLOCK DIAGRAMS ABSOLUTE MAXIMUM RATINGS Parameter a Supply Voltage and HI Voltage a Voltage Voltage Voltage Voltage on HB Average Current diode DD ESD Classification THERMAL INFORMATION Parameter Thermal Resistance (Typical) θJA ...
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... VDD- 100 100 mA OHL 100 100 OHH SiP41111 Vishay Siliconix ° °C 125 °C J Typ Max Min Max 0.18 0.24 - 0.27 1.7 2 0.02 0.10 - 0.15 1 1.0 - ...
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... SiP41111 Vishay Siliconix ELECTRICAL SPECIFICATIONS Parameter Lower Turn-Off Propagation Delay (LI Falling to LO Falling) Upper Turn-Off Propagation Delay (HI Falling to HO Falling) Lower Turn-On Propagation Delay (LI Rising to LO Rising) Upper Turn-On Propagation Delay (HI Rising to HO Rising) Delay Matching: Lower Turn-On and Upper Turn-Off ...
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... HI HS SOIC-8 Descriptions Marking Temperature Range 41111 41111 + SiP41111 Two Switch Forward Application Circuit SiP41111 Vishay Siliconix TOP VIEW PowerPak LI HI SOIC-8 (PowerPak) Package - °C SOIC °C SOIC-8 PowerPAK V OUT + GND www.vishay.com 5 ...
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... ° ° 150 ° 125 °C 0.1 0.01 10 100 Frequency (kHz Operating Current vs. Frequency ss www.vishay.com SiP41111 Active Clamp Forward Application Circuit 0.1 0.01 1000 400 300 200 100 1000 V OUT + GND ° ° 150 ° ...
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... Peak Source Current vs. Output Voltage Document Number: 74292 S-61214–Rev. A, 17-Jul- 13 130 60 95 130 (V) SiP41111 Vishay Siliconix 7.8 7.6 7.4 7.2 7 6.8 6 Temperature (°C) Undervoltage Lockout Threshold vs. Temperature 40 t LPLH 35 t HPLH 30 t HPHL t LPHL ...
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... Forward Voltage (V) Bootstrap Diode I-V Characteristics DETAIL DESCRIPTION The SiP41111 IC is the high-speed 2 A half bridge MOSFET drivers, which operating between 13.2 V. The drivers are designed to drive the upper MOSFET switch directly without any isolation devices for half bridge topology and other topologies, which require the upper switch MOSFET ...
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... Careful PCB layout design is absolutely necessary for any high frequency switching device to avoid circuit function and EMI issues. The following guideline should be carefully fol- lowed to optimize the performance of SiP41111 driver strongly recommended to place a 0.1 uf lower ESR decoupling ceramic capacitor right next to the IC from ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...