gal22v10d-10lr-883 Lattice Semiconductor Corp., gal22v10d-10lr-883 Datasheet

gal22v10d-10lr-883

Manufacturer Part Number

gal22v10d-10lr-883

Description

High Performance E2 Cmos Pld Generic Array Logic? Gal Data Sheets

Manufacturer

Lattice Semiconductor Corp.

Datasheet

1.GAL22V10D-10LR-883.pdf (7 pages)

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• HIGH PERFORMANCE E

• ACTIVE PULL-UPS ON ALL PINS

• COMPATIBLE WITH STANDARD 22V10 DEVICES

• 50% REDUCTION IN POWER VERSUS BIPOLAR

• E

• TEN OUTPUT LOGIC MACROCELLS

• PRELOAD AND POWER-ON RESET OF REGISTERS

• APPLICATIONS INCLUDE:

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

The GAL22V10/883 is a high performance E

logic device processed in full compliance to MIL-STD-883. This

military grade device combines a high performance CMOS process

with Electrically Erasable (E

the highest speed performance available of any military qualified

22V10 device. CMOS circuitry allows the GAL22V10 to consume

much less power when compared to bipolar 22V10 devices. E

technology offers high speed (<100ms) erase times, providing the

ability to reprogram or reconfigure the device quickly and efficiently.

The generic architecture provides maximum design flexibility by

allowing the Output Logic Macrocell (OLMC) to be configured by

the user. The GAL22V10 is fully function/fuse map/parametric com-

patible with standard bipolar and CMOS 22V10 devices.

Unique test circuitry and reprogrammable cells allow complete AC,

DC, and functional testing during manufacture. As a result, Lat-

tice Semiconductor delivers 100% field programmability and func-

tionality of all GAL products. In addition, 100 erase/write cycles and

data retention in excess of 20 years are specified.

to change without notice.

LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.

Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com

22v10mil_04

Features

Description

— 10 ns Maximum Propagation Delay

— Fmax = 166 MHz

— 7ns Maximum from Clock Input to Data Output

— TTL Compatible 12 mA Outputs

— UltraMOS

— Fully Function/Fuse-Map/Parametric Compatible

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

— Maximum Flexibility for Complex Logic Designs

— 100% Functional Testability

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

CELL TECHNOLOGY

with Bipolar and UVCMOS 22V10 Devices

Advanced CMOS Technology

CMOS

) floating gate technology to provide

TECHNOLOGY

CMOS programmable

Functional Block Diagram

Pin Configuration

I/CLK

GAL22V10

Top View

LCC

GAL22V10/883

High Performance E

I/O/Q

Generic Array Logic™

I/CLK

GND

PRESET

RESET

OLMC

CERDIP

22V10

GAL

February 1999

CMOS PLD

I/O/Q

Vcc

I/O/Q

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gal22v10d-10lr-883 Summary of contents

Page 1

... GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified. Copyright © 1999 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. ...

Page 2

... The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information. 2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester ground degradation. Characterized but not 100% tested. 3) Typical values are at Vcc = 5V and T Specifications GAL22V10D/883 Recommended Operating Conditions (1) Case Temperature (T +1 ...

Page 3

... Calculated from fmax with internal feedback. Refer to fmax Description section. 3) Refer to fmax Description section. Capacitance ( 1.0 MHz) SYMBOL PARAMETER C Input Capacitance I C I/O Capacitance I/O *Characterized but not 100% tested. Specifications GAL22V10D/883 Over Recommended Operating Conditions MAXIMUM* UNITS -10 -15 MIN. MAX. MIN. MAX. — ...

Page 4

... Calculated from fmax with internal feedback. Refer to fmax Description section. 3) Refer to fmax Description section. Capacitance ( 1/0 MHz) A SYMBOL PARAMETER C Input Capacitance I C I/O Capacitance I/O *Characterized but not 100% tested. Specifications GAL22V10D/883 Specifications GAL22V10/883 Over Recommended Operating Conditions MAXIMUM* UNITS -20 -25 -30 MIN. MAX. MIN. MAX. MIN. MAX. ...

Page 5

Switching Waveforms INPUT or I/O FEEDBACK COMBINATORIAL OUTPUT Combinatorial Output INPUT or I/O FEEDBACK t dis OUTPUT Input or I/O to Output Enable/Disable t wh CLK (w/o fdbk) Clock Width INPUT or I/O FEEDBACK DRIVING SP ...

Page 6

Descriptions CLK LOGIC REGISTER ARRAY max with External Feedback 1/( Note: fmax with external feedback is cal- culated from measured tsu and tco. LOGIC REGISTER ARRAY max with No Feedback ...

Page 7

... Note: Lattice Semiconductor recognizes the trend in military device procurement towards using SMD compliant devices, as such, ordering by this number is recommended. Part Number Description GAL22V10D Device Name Speed (ns Low Power Power Specifications GAL22V10/883 ...

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