bs62lv2006stip70 Brillance Semiconductor, bs62lv2006stip70 Datasheet

no-image

bs62lv2006stip70

Manufacturer Part Number
bs62lv2006stip70
Description
Very Low Power Cmos Sram 256k X 8 Bit
Manufacturer
Brillance Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS62LV2006STIP70
Manufacturer:
BSI
Quantity:
20 000
n FEATURES
Ÿ Wide V
Ÿ Very low power consumption :
Ÿ High speed access time :
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE2, CE1 and OE options
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
n POWER CONSUMPTION
n PIN CONFIGURATIONS
R0201-BS62LV2006
GND
DQ0
DQ1
DQ2
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
Brilliance Semiconductor, Inc.
V
V
-55
-70
BS62LV2006DC
BS62LV2006HC
BS62LV2006SC
BS62LV2006STC
BS62LV2006TC
BS62LV2006HI
BS62LV2006SI
BS62LV2006STI
BS62LV2006TI
CC
CC
PRODUCT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
= 3.0V
= 5.0V
FAMILY
CC
BS62LV2006SC
BS62LV2006SI
operation voltage : 2.4V ~ 5.5V
VCC
CE2
A13
A15
A17
A16
A14
A12
A11
WE
A9
A8
A7
A6
A5
A4
Operation current : 23mA (Max.) at 55ns
Standby current :
Operation current : 55mA (Max.) at 55ns
Standby current :
55ns (Max.) at V
70ns (Max.) at V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
TEMPERATURE
-40
+0
OPERATING
BS62LV2006TC
BS62LV2006TI
BS62LV2006STC
BS62LV2006STI
Commercial
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
O
Industrial
O
C to +70
C to +85
Pb-Free and Green package materials are compliant to RoHS
CC
CC
Very Low Power CMOS SRAM
256K X 8 bit
A
B
C
D
E
G
H
F
: 3.0~5.5V
: 2.7~5.5V
0.1uA (Typ.) at 25
10mA (Max.) at 1MHz
0.6uA (Typ.) at 25
O
2mA (Max.) at 1MHz
O
DQ4
DQ5
VSS
VCC
DQ6
DQ7
C
A0
A9
C
1
A10
A1
A2
OE
2
V
36-ball BGA top view
6.0uA
CC
20uA
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
=5.0V
CE2
CE1
WE
A11
NC
NC
STANDBY
3
(I
CCSB1
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A17
A16
A12
A3
A4
A5
4
reserves the right to change products and specifications without notice.
, Max)
V
O
0.7uA
2.0uA
CC
O
A15
A13
A6
A7
C
5
C
=3.0V
DQ0
DQ1
VCC
DQ2
DQ3
VSS
A14
A8
6
10mA
1MHz
9mA
1
POWER DISSIPATION
n DESCRIPTION
The BS62LV2006 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 3.0V/25
3.0V/85
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2), and active LOW output
enable (OE) and three-state output drivers.
The BS62LV2006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP, 8mmx20mm TSOP and
36-ball BGA package.
n BLOCK DIAGRAM
V
10MHz
29mA
30mA
CC
=5V
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A16
A17
A15
A13
CE2
CE1
A11
WE
V
OE
A7
A8
A9
CC
O
C.
53mA
55mA
f
Max.
Address
Buffer
Operating
Input
(I
Control
CC
, Max)
8
8
1.5mA
1MHz
2mA
10
O
C and maximum access time of 55ns at
Output
Buffer
Buffer
Input
Data
Data
Decoder
Row
V
10MHz
10mA
9mA
CC
=3V
8
BS62LV2006
8
1024
22mA
23mA
A6
f
Max.
A5
Address Input Buffer
Column Decoder
A10
Memory Array
1024 x 2048
Write Driver
Column I/O
Sense Amp
Revision
May.
A4 A3 A2 A1 A0
DICE
BGA-36-0608
SOP-32
STSOP-32
TSOP-32
BGA-36-0608
SOP-32
STSOP-32
TSOP-32
PKG TYPE
2048
256
8
2006
1.3

Related parts for bs62lv2006stip70

bs62lv2006stip70 Summary of contents

Page 1

Very Low Power CMOS SRAM 256K X 8 bit Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V operation voltage : 2.4V ~ 5.5V CC Ÿ Very low power consumption : V = 3.0V Operation ...

Page 2

PIN DESCRIPTIONS Name A0-A17 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports V CC GND n TRUTH TABLE CE1 MODE H Not selected ...

Page 3

DC ELECTRICAL CHARACTERISTICS (T PARAMETER PARAMETER NAME V Power Supply CC V Input Low Voltage IL V Input High Voltage IH I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High ...

Page 4

LOW V DATA RETENTION WAVEFORM (2) (CE2 Controlled CE2 n AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level ...

Page 5

SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE 1 ADDRESS D OUT (1,3,4) READ CYCLE 2 CE1 CE2 D OUT (1, 4) READ CYCLE 3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. ...

Page 6

AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Write Cycle Time AVAX Chip Select to End of Write E1LWH Address Set up Time AVWL Address ...

Page 7

WRITE CYCLE 2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

ORDERING INFORMATION BS62LV2006 Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which ...

Page 9

PACKAGE DIMENSIONS (continued) n STSOP - 32 TSOP - 32 R0201-BS62LV2006 9 BS62LV2006 Revision 1.3 May. 2006 ...

Page 10

PACKAGE DIMENSIONS (continued) VIEW A 36 mini-BGA (6 x 8mm) R0201-BS62LV2006 D1 10 BS62LV2006 NOTES : 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS. ...

Page 11

Revision History Revision No. History 1.2 Add Icc1 characteristic parameter Improve Iccsb1 spec. I-grade from 30uA to 20uA at 5.0V C-grade from 10uA to 6.0uA at 5.0V 1.3 Change I-grade operation temperature range - from –25 O R0201-BS62LV2006 5.0uA ...

Related keywords