bs62lv4007sti ETC-unknow, bs62lv4007sti Datasheet

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bs62lv4007sti

Manufacturer Part Number
bs62lv4007sti
Description
Very Low Power/voltage Cmos Sram 512k X 8 Bit
Manufacturer
ETC-unknow
Datasheet
R0201-BS62LV4007
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• Three state outputs and TTL compatible
PIN CONFIGURATIONS
PRODUCT FAMILY
Brilliance Semiconductor, Inc
FEATURES
VCC
Vcc = 5.0V
A11
A13
A17
A15
A18
A16
A14
A12
WE
-55
-70
BS62LV4007TC
BS62LV4007STC
BS62LV4007SC
BS62LV4007EC
BS62LV4007PC
BS62LV4007TI
BS62LV4007STI
BS62LV4007SI
BS62LV4007EI
BS62LV4007PI
A9
A8
A7
A6
A5
A4
PRODUCT
FAMILY
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND
DQ0
DQ1
DQ2
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
BSI
55ns
70ns
C-grade: 68mA (@55ns) operating current
C-grade: 58mA (@70ns) operating current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
2.0uA (Typ.) CMOS standby current
BS62LV4007TC
BS62LV4007STC
BS62LV4007TI
BS62LV4007STI
I -grade: 70mA (@55ns) operating current
I -grade: 60mA (@70ns) operating current
BS62LV4007SC
BS62LV4007SI
BS62LV4007EC
BS62LV4007EI
BS62LV4007PC
BS62LV4007PI
TEMPERATURE
-
+0
40
OPERATING
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
O
O
Very Low Power/Voltage CMOS SRAM
512K X 8 bit
C to +70
C to +85
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
O
O
C
C
. reserves the right to modify document contents without notice.
4.5V ~ 5.5V
4.5V ~ 5.5V
RANGE
Vcc
55ns :4.5~5.5V
70ns :4.5~5.5V
SPEED
55 / 70
55 / 70
( ns )
The BS62LV4007 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
2.0uA at
Easy memory expansion is provided by an active LOW chip enable
(CE) , and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4007 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4007 is available in the JEDEC standard 32L SOP, TSOP
, PDIP, TSOP II and STSOP package.
1
DESCRIPTION
BLOCK DIAGRAM
A13
A17
A15
A18
A16
A14
A12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Vdd
GND
A7
A6
A5
A4
WE
CE
OE
5.0V/25
( I
Address
STANDBY
Buffer
Input
CCSB1
Vcc =5.0V
o
C
30uA
60uA
8
Control
8
POWER DISSIPATION
and maximum access time of 55ns at
, Max )
22
Output
Data
Buffer
Data
Buffer
Input
Decoder
Row
Vcc = 5.0V
68mA
70mA
55ns
Operating
( I
8
CC
2048
8
, Max )
BS62LV4007
A11 A9 A8 A3 A2 A1 A0 A10
Vcc =5.0V
58mA
60mA
70ns
Address Input Buffer
Column Decoder
Memory Array
2048 X 2048
Write Driver
Sense Amp
Column I/O
TSOP
STSOP
TSOP2
PDIP
TSOP
STSOP
SOP
TSOP2
PDIP
SOP
2048
5.0V/85
256
16
Revision 1.1
Jan.
TYPE
PKG
-
-
-
-
-
32
-
32
32
32
32
-
-
32
-
-
32
32
32
32
o
C.
2004

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bs62lv4007sti Summary of contents

Page 1

... A13 A17 6 27 BS62LV4007TC 7 26 A15 BS62LV4007STC 8 25 VCC BS62LV4007TI A18 BS62LV4007STI 23 A16 11 22 A14 A12 Brilliance Semiconductor, Inc R0201-BS62LV4007 DESCRIPTION The BS62LV4007 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a range of 4 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A18 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc GND TRUTH TABLE MODE WE Not selected X Output Disabled H Read H Write L ABSOLUTE ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (3) Voltage Guaranteed Input High V IH (3) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage Output High ...

Page 4

BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output 0.5Vcc Timing Reference Level Output Load ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER ...

Page 5

BSI (1,3,4) READ CYCLE2 CE D OUT (1,4) READ CYCLE3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously selected when Address valid prior to or coincident with ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals ...

Page 8

BSI ORDERING INFORMATION BS62LV4007 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...

Page 9

BSI TSOP2 - 32 TSOP - 32 R0201-BS62LV4007 BS62LV4007 9 Revision 1.1 Jan. 2004 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 PDIP - 32 R0201-BS62LV4007 10 BS62LV4007 Revision 1.1 Jan. 2004 ...

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