bs62lv8006ei ETC-unknow, bs62lv8006ei Datasheet

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bs62lv8006ei

Manufacturer Part Number
bs62lv8006ei
Description
Very Low Power/voltage Cmos Sram
Manufacturer
ETC-unknow
Datasheet
R0201-BS62LV8006
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
BS62LV8006EC
BS62LV8006FC
BS62LV8006EI
BS62LV8006FI
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
FEATURES
Vcc = 5.0V C-grade: 75mA (@55ns) operating current
-55
-70
PRODUCT
FAMILY
GND
DQ0
DQ1
VCC
DQ2
DQ3
A
B
C
D
E
F
G
H
CE1
A19
A18
A17
A16
A15
NC
NC
NC
NC
WE
A4
A3
A2
A1
A0
BSI
55ns
70ns
A18
VSS
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
NC
NC
NC
D0
D3
8.0uA (Typ.) CMOS standby current
C-grade: 60mA (@70ns) operating current
I -grade: 76mA (@55ns) operating current
I -grade: 61mA (@70ns) operating current
48-ball BGA top view
BS62LV8006EC
BS62LV8006EI
OE
2
NC
D2
A8
D1
NC
NC
NC
VCC
A17
A14
A12
A0
3
A3
A5
A9
TEMPERATURE
-40
+0
OPERATING
O
A16
A15
A13
A10
O
4
A1
A4
A6
A7
C to +70
C to +85
Very Low Power/Voltage CMOS SRAM
1M X 8 bit
A11
A2
CE1
D5
WE
5
NC
D6
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
CE2
VCC
VSS
A19
6
NC
D4
NC
D7
O
O
C
C
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
. reserves the right to modify document contents without notice.
4.5V ~ 5.5V
4.5V ~ 5.5V
RANGE
Vcc
55ns : 4.5~5.5V
70ns : 4.5~5.5V
SPEED
55 / 70
55 / 70
( ns )
The BS62LV8006 is a high performance , very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 8 bits and
operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
8.0uA at 5V/25
Easy memory expansion is provided by an active LOW chip enable (CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV8006 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV8006 is available in 48B BGA and 44L TSOP2 packages.
1
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
A13
A17
A15
A18
A16
A14
A12
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
Vdd
Gnd
CE2
A7
A6
A5
A4
WE
OE
Address
Buffer
Input
( I
STANDBY
o
CCSB1
Control
C and maximum access time of 55ns at 5.0V/85
8
Vcc=5V
8
110uA
55uA
POWER DISSIPATION
, Max )
22
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
Operating
8
( I
2048
Vcc=5V
8
CC
75mA
76mA
55ns
, Max )
A11A9 A8 A3 A2 A1 A0A10 A19
BS62LV8006
Address Input Buffer
Column Decoder
Memory Array
2048 X 4096
Write Driver
Sense Amp
Column I/O
4096
BGA-48-0912
TSOP2-44
TSOP2-44
BGA-48-0912
512
18
PKG TYPE
Revision 2.1
Jan.
o
C.
2004

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bs62lv8006ei Summary of contents

Page 1

... PIN CONFIGURATIONS CE1 DQ0 BS62LV8006EC 10 35 DQ1 11 34 VCC BS62LV8006EI 12 33 GND 13 32 DQ2 14 31 DQ3 A19 19 26 A18 20 25 A17 21 24 A16 22 23 A15 1 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A19 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (3) Voltage Guaranteed Input High V IH (3) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output 0.5Vcc Timing Reference Level Output Load ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE (1,2,4) READ CYCLE1 ADDRESS D OUT READ CYCLE2 (1,3,4) CE2 CE1 D OUT (1,4) READ CYCLE3 ADDRESS OE CE2 CE1 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE2 CE1 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. ...

Page 8

BSI ORDERING INFORMATION BS62LV8006 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...

Page 9

BSI PACKAGE DIMENSIONS (continued) SIDE VIEW D 0.1 D1 3.375 VIEW A 48 mini-BGA (9mm x 12mm) R0201-BS62LV8006 BS62LV8006 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE ...

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