bs62lv8006ei ETC-unknow, bs62lv8006ei Datasheet
bs62lv8006ei
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bs62lv8006ei Summary of contents
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... PIN CONFIGURATIONS CE1 DQ0 BS62LV8006EC 10 35 DQ1 11 34 VCC BS62LV8006EI 12 33 GND 13 32 DQ2 14 31 DQ3 A19 19 26 A18 20 25 A17 21 24 A16 22 23 A15 1 ...
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BSI PIN DESCRIPTIONS Name A0-A19 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...
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BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (3) Voltage Guaranteed Input High V IH (3) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...
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BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output 0.5Vcc Timing Reference Level Output Load ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER ...
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BSI SWITCHING WAVEFORMS (READ CYCLE (1,2,4) READ CYCLE1 ADDRESS D OUT READ CYCLE2 (1,3,4) CE2 CE1 D OUT (1,4) READ CYCLE3 ADDRESS OE CE2 CE1 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...
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BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...
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BSI (1,6) WRITE CYCLE2 ADDRESS CE2 CE1 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. ...
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BSI ORDERING INFORMATION BS62LV8006 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...
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BSI PACKAGE DIMENSIONS (continued) SIDE VIEW D 0.1 D1 3.375 VIEW A 48 mini-BGA (9mm x 12mm) R0201-BS62LV8006 BS62LV8006 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE ...