mga-638p8 Avago Technologies, mga-638p8 Datasheet

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mga-638p8

Manufacturer Part Number
mga-638p8
Description
High Linearity Low Noise Ampli?er
Manufacturer
Avago Technologies
Datasheet

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MGA-638P8
High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-638P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). This LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 μm GaAs
Enhancement-mode pHEMT process. It is housed in the
miniature 2.0 x 2.0 x 0.75 mm
(DFN) package. The device is designed for optimum use
from 2.5 GHz up to 4.0 GHz. The compact footprint and
low profile coupled with low noise, high gain and high
linearity make this an ideal choice as a low noise amplifier
for cellular infrastructure applications such as LTE, GSM,
CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum
performance at lower frequency from 450 MHz up to 1.5
GHz, MGA-636P8 is recommended. For optimum perfor-
mance from 1.5 GHz up to 2.5 GHz, MGA-637P8 is recom-
mended. All these 3 products, MGA-636P8, MGA-637P8
and MGA-638P8 share the same package and pinout con-
figuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm
[1]
[2]
[3]
[4]
Note:
Package marking provides orientation and identification
“38” = Product Code
“X” = Month Code
It is recommended to ground Pin1, 4 and 8 which are Not Used.
Pin 1 – Not Used
Pin 2 – RFinput
Pin 3 – Vbias2
Pin 4 – Not Used
Center paddle – GND
TOP VIEW
38X
[8]
[7]
[6]
[5]
3
8-lead DFN
[8]
[7]
[6]
[5]
Pin 5 – Vbias1
Pin 6 – PwrDwn
Pin 7 – RFoutput
Pin 8 – Not Used
3
BOTTOM VIEW
8-pin Dual-Flat-Non-Lead
GND
[1]
[2]
[3]
[4]
Features
• High linearity performance.
• Low Noise Figure.
• GaAs E-pHEMT Technology
• Low cost small package size.
• Integrated with active bias and option to access FET
• Integrated power down control pin.
Specifications
2.5 GHz; 4.8 V, 84 mA
• 17.3 dB Gain
• 0.87 dB Noise Figure
• 14 dB Input Return Loss
• +22.6 dBm Input IP3
• +22.2 dBm Output Power at 1 dB gain compression
Applications
• Cellular infrastructure applications such as LTE, GSM,
• Other low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
gate.
CDMA, W-CDMA, CDMA2000 & TD-SCDMA.
eliminating the need of negative gate voltage associated with con-
ventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 100 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
[1]
.

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mga-638p8 Summary of contents

Page 1

... MHz up to 1.5 GHz, MGA-636P8 is recommended. For optimum perfor- mance from 1.5 GHz up to 2.5 GHz, MGA-637P8 is recom- mended. All these 3 products, MGA-636P8, MGA-637P8 and MGA-638P8 share the same package and pinout con- figuration. Pin Configuration and Package Marking 3 2 ...

Page 2

Simplified Schematic L3 [1] [NU] C1 RFin [2] [RFinput] [3] L1 Bias [Vbias2] [4] [NU Note: 1. Device is turned ON when PwrDwn pin is applied with left open. Device is turned ...

Page 3

Electrical Specifications T = 25° C, Vdd = Vbias1 = 4 measurement at 2.5 GHz, measured on demo board in Figure 5 with component listed A in Table1. Symbol Parameter and Test Condition Idd Bias Current I ...

Page 4

... LNA Mode Power Down Mode Figure 6. Demo Board Schematic Diagram Notes: • The schematic is shown with the assumption that similar PCB is used for all MGA-636P8, MGA-637P8 and MGA-638P8. • Detail of the components needed for this product is shown in Table 1. Value 1.8 pF (Murata) 100 pF (Murata) 4.7 μ ...

Page 5

Typical Performance RF performance 25° C, Vdd = 4.8 V, Idd = 84 mA, measured using 50 ohm input and output board unless stated A otherwise. IIP3 test condition RF1 0.9 0.8 0.7 0.6 0.5 ...

Page 6

Frequency (GHz) Figure 13. Fmin vs Frequency and Idd at 4 1.9 2 2.2 2.5 Frequency (GHz) Figure 15. ...

Page 7

... Below is the table showing the MGA-638P8 Reflection Coefficient Parameters tuned for Maximum IIP3, Vdd = 4.8 V, Idd = 84 mA. Gamma Load position Frequency (GHz) Magnitude 1.9 0.45 2 0.54 2.2 0.45 2.5 0.45 2.7 0.36 3.3 0.18 3.5 0.18 [1] [NU] [2] RFinput [RFinput] Reference Plane [3] Bias [Vbias2] [4] [NU] Figure 16. RFinput and RFoutput Reference Plane Notes: 1. The Maximum IIP3 values are calculated based on Load pull measurements on approximately 100 diff ...

Page 8

Typical Performance RF performance 25° C, Vdd = Vbias1 = 4.8 V, Idd = 84 mA, LNA mode, measured on demo board in Figure 5. A Signal = CW unless stated otherwise. Application Test Circuit is shown ...

Page 9

Frequency (GHz) Figure 21. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs Frequency 120 100 200 ...

Page 10

Typical Scattering Parameters, Vdd = 4.8 V, Idd = 84 mA LNA SPAR (100 MHz – 20 GHz) Freq S11 S11 (GHz) (dB) (ang) 0.1 0.052 -25.318 0.5 -3.786 -94.894 0.7 -4.926 -113.237 0.9 -5.619 -126.296 1.0 -5.94 -130.828 1 ...

Page 11

... TOP VIEW 0.60±0.05 Exp. DAP 0.35±0.05 0.25±0.05 BOTTOM VIEW 11 Part Number Ordering Information Γ Part Number opt Ang. R MGA-638P8-BLKG n/50 152.8 0.044 MGA-638P8-TR1G 156.4 0.040 163.5 0.035 174.2 0.034 181.4 0.036 202.8 0.045 209.9 0.045 SIDE VIEW PIN #1 IDENTIFICATION R0.10 1.20±0.05 1.50 Exp. DAP Notes: Ref ...

Page 12

Recommended PCB Land Pattern and Stencil Design 2.20 1.75 0.00 0.80 0.506x 0.258x 0.458x 0.303x R0.154x PCB Land Pattern 1.75 0.563x 0.506x 0.21 0.172x R0.154x Combines PCB & Stencil Design All Dimension are in millimeters Notes: 1. Stencil thickness is ...

Page 13

Device Orientation REEL USER FEED COVER TAPE DIRECTION Tape Dimensions 10° MAX A O DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE ...

Page 14

... BACK VIEW For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. ...

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