mga-636p8 Avago Technologies, mga-636p8 Datasheet

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mga-636p8

Manufacturer Part Number
mga-636p8
Description
High Linearity Low Noise Ampli?er
Manufacturer
Avago Technologies
Datasheet
MGA-636P8
High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-636P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). This LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 μm GaAs
Enhancement-mode pHEMT process. It is housed in the
miniature 2.0 x 2.0 x 0.75 mm
(DFN) package. The device is designed for optimum use
from 450 MHz up to 1.5 GHz. The compact footprint
and low profile coupled with low noise, high gain and
high linearity make this an ideal choice as a low noise
amplifier for cellular infrastructure applications such as
LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For
optimum performance at lower frequency from 1.5 GHz
up to 2.5 GHz, MGA-637P8 is recommended. For optimum
performance at higher frequency from 2.5 GHz up to 4
GHz, MGA-638P8 is recommended. All these 3 products,
MGA-636P8, MGA-637P8 and MGA-638P8 share the same
package and pinout configuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm
[1]
[2]
[3]
[4]
Note:
Package marking provides orientation and identification
“36” = Product Code
“X” = Month Code
It is recommended to ground Pin1, 4 and 8 which are Not Used.
Pin 1 – Not Used
Pin 2 – RFinput
Pin 3 – Vbias2
Pin 4 – Not Used
Center paddle – GND
TOP VIEW
36X
[8]
[7]
[6]
[5]
3
8-lead DFN
[8]
[7]
[6]
[5]
Pin 5 – Vbias1
Pin 6 – PwrDwn
Pin 7 – RFoutput
Pin 8 – Not Used
3
BOTTOM VIEW
8-pin Dual-Flat-Non-Lead
GND
[1]
[2]
[3]
[4]
Features
• High linearity performance.
• Low Noise Figure.
• GaAs E-pHEMT Technology
• Low cost small package size.
• Integrated with active bias and option to access FET
• Integrated power down control pin.
Specifications
700 MHz; 4.8 V, 108 mA
• 18.8 dB Gain
• 0.44 dB Noise Figure
• 11 dB Input Return Loss
• +23.7 dBm Input IP3
• +23.8 dBm Output Power at 1 dB gain compression
Applications
• Cellular infrastructure applications such as LTE, GSM,
• Other low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
gate.
CDMA, W-CDMA, CDMA2000 & TD-SCDMA.
eliminating the need of negative gate voltage associated with con-
ventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
[1]
.

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mga-636p8 Summary of contents

Page 1

... GHz up to 2.5 GHz, MGA-637P8 is recommended. For optimum performance at higher frequency from 2.5 GHz GHz, MGA-638P8 is recommended. All these 3 products, MGA-636P8, MGA-637P8 and MGA-638P8 share the same package and pinout configuration. Pin Configuration and Package Marking 3 2 ...

Page 2

Simplified Schematic L3 [1] [NU] C1 RFin [2] [RFinput] [3] L1 Bias [Vbias2] [4] [NU Note: 1. Device is turned ON when PwrDwn pin is applied with left open. Device is turned ...

Page 3

Electrical Specifications T = 25° C, Vdd = Vbias1 = 4 measurement at 700 MHz, measured on demo board in Figure 5 with component A listed in Table1. Symbol Parameter and Test Condition Idd Drain Current ...

Page 4

... Power Down Mode Figure 6. Demo Board Schematic Diagram Notes: • The schematic is shown with the assumption that similar PCB is used for all MGA-636P8, MGA-637P8 and MGA-638P8. • Detail of the components needed for this product is shown in Table 1. Value 100 pF (Murata (Murata) 4.7 μ ...

Page 5

Typical Performance RF performance 25° C, Vdd = 4.8 V, Idd = 100 mA, measured using 50 ohm input and output board unless stated A otherwise. IIP3 test condition RF1 0.5 0.4 0.3 0.2 0.1 ...

Page 6

Frequency (MHz) Figure 13. Fmin vs Frequency and Idd at 4 500 700 800 900 Frequency (MHz) Figure ...

Page 7

... Below is the table showing the MGA-636P8 Reflection Coefficient Parameters tuned for Maximum IIP3, Vdd = 4.8 V, Idd = 100 mA. Gamma Load position Frequency (GHz) Magnitude 0.50 0.36 0.70 0.36 0.80 0.36 0.90 0.27 1.70 0.27 1.90 0.27 [1] [NU] [2] RFinput [RFinput] Reference Plane [3] Bias [Vbias2] [4] [NU] Figure 16. RFinput and RFoutput Reference Plane Notes: 1. The Maximum IIP3 values are calculated based on Load pull measurements on approximately 100 diff ...

Page 8

Typical Performance RF performance 25° C, Vdd = Vbias1 = 4.8 V, Idd = 108 mA, LNA mode, measured on demo board in Figure 5. Signal unless stated otherwise. Application Test Circuit is shown ...

Page 9

Frequency (GHz) Figure 21. Input Return Loss, Output Return Loss, Gain, Reverse Isolation vs Frequency 120 100 ...

Page 10

Typical Scattering Parameters, Vdd = 4.8 V, Idd = 108 mA LNA SPAR (100 MHz – 20 GHz) Freq S11 S11 (GHz) (dB) (ang) 0.1 -3.611 -62.842 0.5 -10.75 -141.835 0.7 -11.393 -159.056 0.9 -11.693 -171.846 1.0 -12.003 -176.697 1.5 ...

Page 11

... TOP VIEW 0.60±0.05 Exp. DAP 0.35±0.05 0.25±0.05 BOTTOM VIEW 11 Part Number Ordering Information Γ Part Number opt Ang. R MGA-636P8-BLKG n/50 -31.8 0.038 MGA-636P8-TR1G 11.5 0.037 33.2 0.037 54.8 0.038 228 0.043 271 0.043 SIDE VIEW PIN #1 IDENTIFICATION R0.10 1.20±0.05 1.50 Exp. DAP Notes: Ref. 1. All dimensions are in millimeters. ...

Page 12

Recommended PCB Land Pattern and Stencil Design 2.20 1.75 0.00 0.80 0.506x 0.258x 0.458x 0.303x R0.154x PCB Land Pattern 1.75 0.563x 0.506x 0.21 0.172x R0.154x Combines PCB & Stencil Design All Dimension are in millimeters Notes: 1. Stencil thickness is ...

Page 13

Device Orientation REEL USER FEED COVER TAPE DIRECTION Tape Dimensions 10° MAX A O DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE ...

Page 14

... BACK VIEW For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved. ...

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