alm-1222 Avago Technologies, alm-1222 Datasheet - Page 3

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alm-1222

Manufacturer Part Number
alm-1222
Description
1.8-2.2ghz Low Noise, High Gain, High Linearity Balanced Amplifier Module
Manufacturer
Avago Technologies
Datasheet

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Electrical Specifications
T
board (see Fig. 5) unless otherwise specified.
Notes:
7. Measurements at 2GHz obtained using demo board described in Fig 5.
8. 2GHz OIP3 test condition: F
9. For NF data, board losses of 0.12dB at the input have been de-embedded.
10. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
3
Symbol
Gain
OIP3
NF
OP1dB
S11
S22
S12
ISO
Vctrl
A
application note for more details.
= 25 °C, Vdd =5V @ 280mA, RF performance at 2.0 GHz, given for each of the 2 RF paths, measured on demo
[9]
1-2
[8]
Parameter and Test Condition
Control Voltage, Idd=280mA
Gain
Output Third Order Intercept Point
Noise Figure (Typ.Vctrl=2.2V)
Output Power at 1dB Gain Compression
Input Return Loss, 50
Output Return Loss, 50
Reverse Isolation
Isolation between RF Input 1 and RF Input 2
[7], [10]
RF1
= 2.0 GHz, F
source
RF2
load
= 2.01 GHz with input power of -20dBm per tone measured at lower side band.
Units
dB
dBm
dB
dBm
dB
dB
dB
dB
Min.
1.9
29.5
-
-
-
-
-
-
39
0.62
2.3
31
43.7
27.5
-8
-10
45
22
Typ.
Max.
2.8
-
1.00
-
-
-
-
-
32.5

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