alm-32120 Avago Technologies, alm-32120 Datasheet - Page 2
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alm-32120
Manufacturer Part Number
alm-32120
Description
2 Watt High Linearity Amplifer
Manufacturer
Avago Technologies
Datasheet
1.ALM-32120.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
alm-32120-BLKG
Manufacturer:
TST
Quantity:
5 000
Part Number:
alm-32120-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Absolute Maximum Rating
Product Consistency Distribution Charts
Figure 1. Ids; LSL = 690mA, nominal = 800mA, USL = 910mA
Figure 3. P1dB; LSL = 33dBm, nominal = 34.4dBm
Figure 5. Gain; LSL=12.5dB, Nominal = 14.3dB, USL=15.5dB
2
LSL
LSL
LSL
12
12
V
Symbol
V
T
T
I
P
P
ds,max
33
33
ctrl,max
33
dd,max
j, max
STG
in,max
diss
CPK = 1.592
Std Dev = 0.018
CPK = 5.690
Std Dev = 0.050
CPK = 3.598
Std Dev = 0.086
LSL
LSL
LSL
LSL
LSL
LSL
12.5
12.5
.700
.700
.700
33.5
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
33.5
33.5
13
13
13.5
13.5
[2]
.800
.800
.800
14
14
T
34
34
34
A
=250C
14.5
14.5
[4]
34.5
34.5
34.5
15
15
[5]
.900
.900
.900
15.5
15.5
USL
USL
USL
USL
USL
USL
35
35
35
16
16
V
mA
V
dBm
W
°C
°C
Units
Figure 2. OIP3; LSL = 48dBm, nominal = 52dBm
Figure 4. PAE at P1dB; nominal = 50.3%
Note:
5. Distribution data sample size is 500 samples taken from 3 different
6. Measurements are made on a production test board. Input trace
45
45
45
Max.
48
48
Absolute
48
5.5
1500
5.5
28
8.25
150
-65 to 150
wafer lots. T
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
losses have not been de-embedded from actual measurements.
LSL
LSL
CPK = 1.81
Std Dev = 0.642
Std Dev = 0.521
LSL
46
46
46
49
49
49
47
47
47
A
= 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz
48
48
48
50
Notes:
2. Operation of this device in excess of any of
3. Thermal resistance measured using Infra-Red
4. This is limited by maximum Vdd and Ids.
50
50
Thermal Resistance
(Vdd=5, Ids=800mA, Tc=85°C)
49
these limits may cause permanent damage.
measurement technique.
Derate 83.3mW/ 0C for Tc > 51.00C.
49
49
51
51
51
50
50
50
51
51
51
52
52
52
52
52
52
[3]
53
53
53
53
53
53
θ
jc
= 12ºC/W
54
54
54
54
54
54
55
55
55