blf6g22-180p NXP Semiconductors, blf6g22-180p Datasheet
blf6g22-180p
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blf6g22-180p Summary of contents
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... BLF6G22-180P UHF power LDMOS transistor Rev. 01 — 2 March 2006 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; carrier ...
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... Description - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Rev. 01 — 2 March 2006 BLF6G22-180P UHF power LDMOS transistor Simplified outline Symbol <tbd> [1] Min - ...
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... RF performance at V class-AB production test circuit Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22-180P is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G22-180P_1 Objective data sheet Thermal characteristics Parameter Conditions thermal resistance ...
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... REFERENCES JEDEC EIAJ Rev. 01 — 2 March 2006 BLF6G22-180P UHF power LDMOS transistor ...
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... Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Rev. 01 — 2 March 2006 BLF6G22-180P UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Table 9: Revision history Document ID Release date BLF6G22-180P_1 20060302 BLF6G22-180P_1 Objective data sheet Data sheet status Change notice Doc. number Objective data sheet - Rev. 01 — 2 March 2006 BLF6G22-180P UHF power LDMOS transistor Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 2 March 2006 BLF6G22-180P UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands Date of release: 2 March 2006 Document number: BLF6G22-180P_1 ...