a3l70ttxxi AEGIS SEMICONDUTORES LTDA, a3l70ttxxi Datasheet
a3l70ttxxi
Manufacturer Part Number
a3l70ttxxi
Description
Thyristors
Manufacturer
AEGIS SEMICONDUTORES LTDA
Datasheet
1.A3L70TTXXI.pdf
(4 pages)
T
T
I
I
I
current
I
I
di/dt Max. Non-repetitive rate-of-
rise current
P
P
voltage
F Mounting Force
MAXIMUM ALLOWABLE RATINGS
F(AV)
F(RMS)
FSM
2
2
+I
-V
J
stg
t Max. I
t
G
G(AV)
1/2
GM
Junction Temperature
M Max. Peak gate power
GM
Storage Temperature
Max. Peak non-rep. surge
Max. I
Max. Peak gate current
Max. Peak negative gate
Max. Av. gate power
Nom. RMS current
2
PARAMETER
t capability
2
SEMICONDUTORES LTDA.
t
1/2
Max. Av. current
@ Max. T
capability
VOLTAGE RATINGS
C
A3L:70TT.02I
A3L:70TT.04I
A3L:70TT.06I
A3L:70TT.08I
A3L:70TT.10I
A3L:70TT.12I
A3L:70TT.14I
A3L:70TT.16I
Part Number
-40 to 125
-40 to 150
V
Max. rep. peak reverse voltage
VALUE
10.11
11.02
11.52
12.56
138.6
T
RRM
1.53
1.74
3(5)
155
150
150
1.4
1.6
J
70
85
12
3
2
= 0 to 125 C
, VR (V)
1000
1200
1400
1600
200
400
600
800
A3L:70TT.XXI
O
UNITS
kA
T
kA
A/ms
N.m
mA
kA
J
O
O
W
W
O
A
A
2
V
C
C
C
= -40 to 0 C
s
2
s
1/2
1000
1200
1330
1520
200
400
600
800
180 half sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
50 Hz half cycle sine wave
60 Hz half cycle sine wave
t = 10ms
t = 8.3 ms
t = 10ms
t = 8.3 ms
Initial T
for time t
T
10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40%
of non-repetitive value.
tp < 5 ms
tp < 5 ms
Upper connectors(Heatsink)
J
O
= 125 C, V
O
V
rep. peak reverse voltage
J
RSM
= 125 C, no voltage applied after surge.
O
x
= I
, V
2
t
D
T
O
1/2
J
R
= V
= 25 to 125 C
* t
(V)
DRM
x
1100
1300
1500
1700
1/2
300
500
700
900
. (0.1 < tx < 10ms).
, I
Max. non-
TM
= 1600A. Gate pulse: 20V, 20W,
O
NOTES
-
-
-
-
-
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
Initial T
applied after surge.
J
J
J
J
= 125 C, rated V
= 125 C, no voltage
= 125 C, rated V
= 125 C, no voltage
O
O
O
O
RRM
RRM
2
I
t
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a3l70ttxxi Summary of contents
Page 1
SEMICONDUTORES LTDA. VOLTAGE RATINGS Part Number A3L:70TT.02I A3L:70TT.04I A3L:70TT.06I A3L:70TT.08I A3L:70TT.10I A3L:70TT.12I A3L:70TT.14I A3L:70TT.16I MAXIMUM ALLOWABLE RATINGS PARAMETER T Junction Temperature J T Storage Temperature stg Max. Av. current I F(AV) @ Max Nom. RMS current F(RMS) ...
Page 2
SEMICONDUTORES LTDA. CHARACTERISTICS PARAMETER MIN. V peak on-state voltage --- TM V Threshold voltage --- T(TO) r Slope resistance --- T I Latching current --- L I Holding current --- H t Delay time --- d t Turn-off time --- ...
Page 3
SEMICONDUTORES LTDA. Maximum Average Forward Power Loss 1200 1100 1000 900 800 700 600 500 400 300 200 100 *Sinusoidal Waveform Average Forward Current (A) Fig.3 -Forward Power Loss Characteristics Forward Voltage Drop 1000 100 ...
Page 4
SEMICONDUTORES LTDA. TO-240AA Fig Outline Characteristics A3L:70TT.XXI Fig Gate Trigger Characteristics ~ 1 Fig Circuit Layout ...