se2527l SiGe Semiconductor, se2527l Datasheet - Page 5

• Manufacturer Part Number: se2527l
• Description: 2.4 Ghz Power Amplifier With Power Detector
• Manufacturer: SiGe Semiconductor

802.11b/g AC Electrical Characteristics (5 V)
Conditions: V
157-DST-01 Rev 1.2 Apr-12-2006
Symbol
VSWR
ACPR
STAB
EVM
ΔS
P
t
f
S
r
2f
3f
L-U
1dB
, t
21
21
f
Error Vector Magnitude
Frequency Range
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Adjacent Channel Power Ratio
Harmonic
Rise and Fall Time
Stability
Tolerance to output load
mismatching
SE2527L-EV1 evaluation board, unless otherwise noted.
CC
±11 MHz offsets from carrier
±22 MHz offsets from carrier
= V
EN
Parameter
= 3.3 V, V
CC3
= 5 V, f = 2.45 GHz, T
No modulation
P
P
f
P
Mbps CCK signal, BT =
0.45
P
P
Mbps OFDM signal, 64
QAM
P
Mbps OFDM signal, 64
QAM VSWR = 6:1 All
Phases
P
Mbps OFDM signal, 64
QAM VSWR = 10:1 All
Phases
IN
IN
IN
OUT
OUT
OUT
OUT
OUT
= 2400 to 2500 MHz
= -25 dBm
= -25 dBm,
= 25 dBm, 11
= 25 dBm, CW
= 23 dBm, 54
= 25 dBm, 54
= 25 dBm, 54
Conditions
2.4 GHz Power Amplifier with Power Detector
-
-
A
= 25 °C, as measured on SiGe Semiconductor’s
All non-harmonically related outputs less
2400
Min.
26.5
29
-
-
-
-
-
-
-
than -50 dBc/100 kHz
Preliminary Information
Typ.
28.5
-37
-60
-45
-35
3.0
0.5
34
1
-
No damage
2500
Max.
36.5
-
-
-
-
-
-
-
-
SE2527L
dBm/MHz
dBm/MHz
µSec
MHz
dBm
Unit
dBc
dB
dB
5 of 12
%