njg1122pb4 New Japan Radio Co.,Ltd, njg1122pb4 Datasheet
njg1122pb4
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njg1122pb4 Summary of contents
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... W-CDMA Dual LNA GaAs MMIC GENERAL DESCRIPTION The NJG1122PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted. ...
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... NJG1122PB4 ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Inverter supply voltage Control voltage1 (High) Control voltage1 (Low) Control voltage 2 (High) Control voltage 2 (Low) ...
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... RF Output VSWR2 VSWR =0V, V =1.85V, fRF=2140MHz, T CTL1 CTL2 CONDITIONS -1dB(1) f1=fRF, f2=fRF+100kHz, Pin=-36dBm =2.7V =0V, fRF=2140MHz, T INV CTL1 CTL2 CONDITIONS -1dB(2) F1=fRF, f2=fRF+100kHz, Pin=-36dBm NJG1122PB4 =+25° =50Ω, TEST CIRCUIT MIN TYP MAX UNITS 13.0 14.5 16.0 - 1.7 2.0 -16.0 -14.0 - dBm -6.0 -3.5 - dBm - 1.7 2 ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 4 (800MHz band High Gain mode PARAMETERS SYMBOL Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point RF Input VSWR1 VSWR RF Output VSWR1 VSWR ELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode =2.7V ...
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... The DC blocking capacitor is not required. 11 GND Ground terminal. (0V) RF input terminal of 800MHz band. The RF signal is input through external matching 12 RFIN1 circuit connected to this terminal. The DC blocking capacitor is not required. CAUTION 1) Ground terminal (No. 11) should be connected to the ground plane as low inductance as possible. NJG1122PB4 DESCRIPTION - 5 - ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 1 (2.1GHz band High Gain Mode) Pout vs. Pin (f=2140MHz Pout -5 -10 -15 -20 -25 -30 -40 -30 -20 Pin (dBm) NF vs. frequency (V =V =2.7V INV 4 3 1 2.05 2.1 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-36dBm OIP3 11 10 ...
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... V ( =2.7V, V 1=0V, V 2=1.85V) CTL CTL 3 ( =2.7V, V 1=0V, V 2=1.85V) CTL CTL 3 (V) DD NJG1122PB4 OIP3, IIP3 vs (f=2140+2140.1MHz, Pin=-36dBm, V =2.7V, V 1=0V, V INV CTL OIP3 IIP3 2 (V) DD VSWR vs (f=2140MHz, V =2.7V, V 1=0V, V 2=1.85V) INV ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 3 (2.1GHz band High Gain Mode) Gain, NF vs. Temperature (f=2140MHz Gain -50 0 Temperature ( P-1dB(IN) vs. Temperature (f=2140MHz -10 -12 P-1dB(IN) -14 -16 -18 -20 -22 -50 0 Temperature ( I vs. Temperature DD (PRF=OFF, V INV -50 0 Temperature ( - ...
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... ELECTRICAL CHARACTERISTICS 4 (2.1GHz band High Gain Mode) NJG1122PB4 - 9 - ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 5 (2.1GHz band High Gain Mode) k factor vs. frequency (V =V =2.7V INV frequency (GHz 1=0V, V 2=1.85V) CTL CTL ...
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... V 2=0V) CTL CTL 2.15 2.2 2.25 2.3 =V =2.7V, V 1=0V, V 2=0V) DD INV CTL CTL IIP3 2.16 2.18 2.2 NJG1122PB4 Gain vs. Pin (f=2140MHz =2.7V, V 1=0V INV CTL CTL 0 -2 Gain - -10 P-1dB(IN)=+11.4dBm -12 -40 -30 -20 -10 0 Pin (dBm) Pout, IM3 vs. Pin (f=2140+2140.1MHz =2.7V, V 1=0V INV ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 7 (2.1GHz band Low Gain Mode) Gain, NF vs. V (f=2140MHz Gain - -10 2 2.5 3 P-1dB(IN) vs. V (f=2140MHz P-1dB(IN 2 (PRF=OFF 3 2.5 2 1 =2.7V, V 1=0V, V 2=0V) INV CTL CTL ...
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... C) =2.7V, V 1=0V, V 2=0V) INV CTL CTL 50 100 o C) =2.7V, V 1=0V, V 2=0V) INV CTL CTL 100 o C) NJG1122PB4 OIP3, IIP3 vs. Temperature (f=2140+2140.1MHz, Pin=-20dBm =2.7V, V 1=0V INV CTL 10 5 OIP3 0 -5 -10 IIP3 -15 -20 - Temperature ( C) VSWR vs. Temperature (f=2140MHz =2.7V, V 1=0V ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 9(2.1GHz band Low Gain Mode ...
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... ELECTRICAL CHARACTERISTICS 10(2.1GHz band Low Gain Mode ) k factor vs. frequency (V =V =2.7V INV frequency (GHz) 1=0V, V 2=0V) CTL CTL NJG1122PB4 - 15 - ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 11(800MHz band High Gain Mode) Pout vs. Pin (f=885MHz =2.7V INV Pout -5 -10 -15 -20 -25 -40 -30 -20 Pin (dBm) NF vs. frequency (V =V =2.7V INV 4 3 1.5 1 0.5 0 0.75 0.8 0.85 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-36dBm OIP3 ...
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... NF 1.5 1 0.5 3.5 4 4 1=1.85V, V 2=1.85V) CTL CTL 3.5 4 4.5 5 (V) DD 1=1.85V, V 2=1.85V) CTL CTL 3.5 4 4.5 5 (V) NJG1122PB4 OIP3, IIP3 vs (f=885+885.1MHz, Pin=-36dBm, V =2.7V, V 1=1.85V, V INV CTL 16 15 OIP3 IIP3 2.5 3 3.5 4 4.5 V (V) DD VSWR vs (f=885MHz, V =2.7V, V 1=1.85V, V 2=1.85V) ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 13(800MHz band High Gain Mode) Gain, NF vs. Temperature (f=885MHz INV 18 17 Gain -50 0 Temperature ( P-1dB(IN) vs. Temperature (f=885MHz -10 -12 P-1dB(IN) -14 -16 -18 -20 -22 -50 0 Temperature ( I vs. Temperature DD (PRF=OFF, V =2.7V, V INV -50 ...
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... ELECTRICAL CHARACTERISTICS 14(800MHz band High Gain Mode) NJG1122PB4 - 19 - ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 15(800MHz band High Gain Mode ) k factor vs. frequency (V =V =2.7V INV frequency (GHz 1=1.85V, V 2=1.85V) CTL CTL ...
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... V 2=0V) CTL CTL 0.9 0. =2.7V, V 1=1.85V, V 2=0V) INV CTL CTL IIP3 0.89 0.9 0.91 0.92 NJG1122PB4 Gain vs. Pin (f=885MHz =2.7V, V 1=1.85V INV CTL CTL 0 -2 Gain - -10 P-1dB(IN)=+9.5dBm -12 -40 -30 -20 -10 0 Pin (dBm) Pout, IM3 vs. Pin (f=885+885.1MHz =2.7V, V 1=1.85V ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 17(800MHz band Low Gain Mode) Gain, NF vs. V (f=885MHz, V =2.7V, V INV -2 -3 Gain - -10 2 2.5 3 P-1dB(IN) vs. V (f=885MHz, V =2.7V, V INV P-1dB(IN 2 (PRF=OFF, V =2.7V, V INV 4 3 2.5 2 1 1=1.85V, V ...
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... 100 o C) 1=1.85V, V 2=0V) CTL CTL 50 100 o C) =2.7V, V 1=1.85V, V 2=0V) CTL CTL 100 o C) NJG1122PB4 OIP3, IIP3 vs. Temperature (f=885+885.1MHz, Pin=-20dBm =2.7V, V 1=1.85V INV CTL 10 5 OIP3 0 -5 -10 -15 -20 - Temperature ( C) VSWR vs. Temperature (f=885MHz =2.7V, V 1=1.85V ...
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... NJG1122PB4 ELECTRICAL CHARACTERISTICS 19(800MHz band Low Gain Mode ...
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... ELECTRICAL CHARACTERISTICS 20(800MHz band Low Gain Mode) k factor vs. frequency (V =V =2.7V INV frequency (GHz) 1=1.85V, V 2=0V) CTL CTL NJG1122PB4 - 25 - ...
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... NJG1122PB4 TEST CIRCUIT V RF IN2 L6 4.3nH (2.1GHz) RFIN2 10 L5 2.7nH GND 11 RF IN1 L2 (800MHz) 18nH RFIN1 12 L1 10nH 1 Pin INDEX PARTS LIST Parts ID Comment L1, L3~L5, L7 TAIYO-YUDEN (HK1005) L2, L6, L8 MURATA (LQW15A) C1~C4 MURATA (GRP15) *: Please use an appropriate inductor for L2, L6 improve Noise Figure. ...
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... RECOMMENDED DESIGN RF IN1 (800MHz) V (Top View) RF IN2 (2.1GHz) V INV CTL RF OUT1 (800MHz) PCB (FR-4): t=0.2m MICROSTRIP LINE WIDTH=0.4mm (Z PCB SIZE=17.0mmx17.0mm NJG1122PB4 V 1 CTL RF OUT2 (2.1GHz =50 Ω ...
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... NJG1122PB4 PACKAGE OUTLINE (FFP12-B4) 1pin (BOTTOM VIEW) 0.365 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. ...