njg1123pb5 New Japan Radio Co.,Ltd, njg1123pb5 Datasheet
njg1123pb5
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njg1123pb5 Summary of contents
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... W-CDMA Triple LNA GaAs MMIC !GENERAL DESCRIPTION NJG1123PB5 is a Triple band LNA IC designed for W-CDMA / UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode. ...
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... NJG1123PB5 !ABSOLUTE MAXIMUM RATINGS PARAMETERS Operating voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature !ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Inverter supply voltage Control voltage1 (High) Control voltage1 (Low) Control voltage 2 (High) Control voltage 2 (Low) ...
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... Pin=-30dBm =0V, V =0V, V =0V, fRF=2140MHz, T CTL1 CTL2 CTL3 CONDITIONS Exclude PCB & connector losses Gain2 (IN: 0.09dB, OUT: 0.36dB) Exclude PCB & connector losses NF2 (IN: 0.09dB) f1=fRF, f2=fRF+100kHz, IIP3_2 Pin=-16dBm NJG1123PB5 =+25° =50Ω, TEST CIRCUIT MIN TYP MAX UNITS 15.5 17.0 19 1.65 1 ...
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... NJG1123PB5 !ELECTRICAL CHARACTERISTICS 4 (800MHz band High Gain mode =2.85V INV CTL1 PARAMETERS SYMBOL Small signal gain3 Noise figure3 Pin at 1dB gain P-1dB(3) compression point3 Input 3rd order intercept point3 RF Input VSWR3 VSWRi3 RF Output VSWR3 VSWRo3 !ELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode) ...
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... =0V, V =1.85V, V =0V, fRF=1860MHz, T CTL2 CTL3 CONDITIONS Exclude PCB & connector losses (IN: 0.10dB, OUT: 0.31dB) Exclude PCB & connector losses (IN: 0.10dB,) 6) f1=fRF, f2=fRF+100kHz, Pin=-16dBm NJG1123PB5 =+25° =50Ω, TEST CIRCUIT MIN TYP MAX UNITS 15.6 17.0 19.0 - 1.5 1.75 -16.0 -11.5 - dBm -5 ...
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... NJG1123PB5 !TERMINAL INFORMATION No. SYMBOL RF input terminal of 800MHz band. The RF signal is input through external matching 1 RFIN1 circuit connected to this terminal. The DC blocking capacitor is not required. 2 GND Ground terminal. (0V) 3 VCTL1 Control voltage supply terminal. The frequency band (2Ghz / 800MHz / 1.7GHz) selects by 2bit control signal. (Please refer to truth table.) ...
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... NJG1123PB5 J0070 (2.1GHz) @High Gain Pout vs. Pin Pout -5 -10 -15 -20 -25 -40 -30 -20 Pin (dBm) Condition Ta=+25 °C , f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL NJG1123PB5 (2.1GHz) @High Gain NF vs. frequency 4 3 1 2.05 2.1 2.15 frequency (GHz) Condition Ta=+25 °C , f=2~2.3GHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL ...
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... P-1dB(IN) vs. frequency - -10 P-1dB(IN) -12 -14 -16 -18 2.1 2.12 2.14 frequency (GHz) Condition Ta=+25 °C , f=2.1~2.2GHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL - 8 - NJG1123PB5 2.16 2.18 2.2 3=1.85V CTL J0070 (2.1GHz) @High Gain OIP3, IIP3 vs. frequency OIP3 IIP3 2.1 2.12 2.14 2.16 2.18 frequency (GHz) Condition Ta=+25 °C , f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm, ...
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... INV Condition Ta=+25 °C , f=2140MHz, V 1=0V, V 2=0V, V CTL CTL CTL NJG1123PB5 (2.1GHz) @High Gain , V INV 4.5 20.0 4 19.0 18.0 3.5 3 17.0 16.0 2.5 2 15.0 1.5 14 13.0 12.0 0.5 3.4 3.6 3.8 3=1.85V CTL NJG1123PB5 (2.1GHz) @High Gain , V DD INV 4 3.5 3 2.5 2 1.5 1 0.5 0 3.4 3.6 3.8 3=1.85V NJG1123PB5 OIP3, IIP3 vs OIP3 IIP3 2.4 2.6 2.8 3 3.2 3 (V) INV DD Condition Ta=+25 °C , f1=2140MHz, f2=f1+2140.1Hz, Pin=-30dBm, ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain Mode) NJG1123PB5 (2.1GHz) @High Gain I vs 3 1.5 1 0.5 0 2.4 2.6 2 INV Condition Ta=+25 °C , RF=OFF, V 1=0V, V 2=0V, V CTL CTL - INV 3.2 3.4 3.6 3.8 (V) 3=1.85V CTL ...
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... V CTL CTL CTL NJG1123PB5 (2.1GHz) @High Gain 4.5 20.0 4 19.0 3.5 18.0 3 17.0 2.5 16.0 2 15.0 NF 1.5 14.0 1 13.0 0.5 12 100 o -50 C) 3=1.85V CTL NJG1123PB5 (2.1GHz) @High Gain 4 3.5 3 2.5 2 1 100 - 3=1.85V NJG1123PB5 OIP3, IIP3 vs. Temperature OIP3 IIP3 - Ambient Temperature ( C) Condition f1=2140MHz, f2=f1+2140.1Hz, Pin=-30dBm, ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain Mode) NJG1123PB5 (2.1GHz) @High Gain I vs. Temperature DD 4 3 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V DD INV V 1=0V, V 2=0V, V CTL CTL - 100 o C) 3=1.85V CTL ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain Mode) NJG1123PB5 - 13 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain Mode) NJG1123PB5 J0070 (2.1GHz) @High Gain k factor vs. frequency frequency (GHz ...
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... CTL NJG1123PB5 20 0 -20 -40 -60 -80 -100 2.2 2.25 2.3 -40 3=0V CTL NJG1123PB5 J0070 (2.1GHz) @Low Gain Gain, IDD vs. Pin Gain P-1dB(IN)=+11.8dBm -30 -20 - Pin (dBm) Condition Ta=+25 °C , f=2140MHz =2.7V, DD INV V 1=0V, V 2=0V, V 3=0V CTL CTL CTL J0070 (2.1GHz) @Low Gain Pout, IM3 vs. Pin ...
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... J0070 (2.1GHz) @Low Gain P-1dB(IN) vs. frequency P-1dB(IN 2.1 2.12 2.14 frequency (GHz) Condition Ta=+25 °C , f=2.1~2.2GHz =2.7V, DD INV V 1=0V, V 2=0V, V CTL CTL - 16 - NJG1123PB5 11 10 2.16 2.18 2.2 3=0V CTL J0070 (2.1GHz) @Low Gain OIP3, IIP3 vs. frequency 9 OIP3 8 7 IIP3 2.1 2.12 2.14 2.16 2.18 frequency (GHz) Condition Ta=+25 °C , f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm ...
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... Condition Ta=+25 °C , f=2140MHz, V 1=0V, V 2=0V, V 3=0V CTL CTL CTL NJG1123PB5 (2.1GHz) @Low Gain , V INV 22 18.0 8 16.0 7 14.0 6 12.0 5 10.0 4 8.0 3 6.0 2 2.4 3.4 3.6 3.8 3=0V NJG1123PB5 (2.1GHz) @Low Gain , V INV 4 3.5 3 2.5 2 1.5 1 0.5 0 3.4 3.6 3.8 2.4 NJG1123PB5 OIP3, IIP3 vs INV IIP3 OIP3 2.6 2.8 3 3.2 3.4 3 (V) DD INV Condition Ta=+25 °C , f1=2140MHz, f2=f1+2140.1MHz, Pin=-16dBm, ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain Mode) NJG1123PB5 (2.1GHz) @Low Gain IMD3 vs -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 (V) DD INV Condition Ta=+25 °C , f1=2140MHz, f2=f1+2140.1MHz, Pin=-16dBm, V 1=0V, V 2=0V, V CTL CTL CTL - 18 - NJG1123PB5 (2.1GHz) @Low Gain , V INV 0.1 0.08 0.06 0.04 0.02 0 3.4 3.6 3.8 2.4 3= INV I DD 2.6 2.8 3 3.2 3 (V) DD ...
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... C) 3=0V CTL 50 75 100 o C) 3=0V CTL NJG1123PB5 NJG1123PB5 (2.1GHz) @Low Gain OIP3, IIP3 vs. Temperature OIP3 8.0 6.0 -50 - Ambient Temperature ( Condition f1=2140MHz, f2=f1+2140.1Hz, Pin=-16dBm =2.7V DD INV V 1=0V, V 2=0V, V 3=0V CTL CTL CTL NJG1123PB5 (2.1GHz) @Low Gain VSWR vs. Temperature 4 3 ...
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... NJG1123PB5 (2.1GHz) @Low Gain IMD3 vs. Temperature -50 -55 -60 -65 -70 -75 IMD3 -80 -85 -90 -50 - Ambient Temperature ( Condition f1=2140MHz, f2=f1+2140.1Hz, Pin=-16dBm =2.7V DD INV V 1=0V, V 2=0V, V CTL CTL - 20 - NJG1123PB5 (2.1GHz) @Low Gain 0.5 0.4 0.3 0.2 0 100 o C) 3=0V CTL I vs. Temperature -50 - Ambient Temperature ( C) Condition RF=OFF ...
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... ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain Mode) NJG1123PB5 - 21 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain Mode) NJG1123PB5 J0070 (2.1GHz) @Low Gain k factor vs. frequency frequency (GHz ...
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... Pout vs. Pin Pout -5 -10 -15 -20 -25 -40 -30 -20 Pin (dBm) Condition Ta=+25 °C , f=885MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL NJG1123PB5 (800MHz) @High Gain NF vs. frequency 4 3 1.5 1 0.5 0 750 800 850 frequency (MHz) Condition Ta=+25 °C , f=750M~1GHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL ...
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... P-1dB(IN) vs. frequency - P-1dB(IN) -10 -12 -14 -16 0.85 0.86 0.87 0.88 frequency (GHz) Condition Ta=+25 °C , f=850~920MHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL - 24 - NJG1123PB5 0.89 0.9 0.91 0.92 3=1.85V CTL J0070 (800MHz) @High Gain OIP3, IIP3 vs. frequency 20 18 OIP3 0.85 0.86 0.87 0.88 0.89 0.9 frequency (GHz) Condition Ta=+25 °C , f1=850~920MHz, f2=f1+100kHz, Pin=-30dBm, ...
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... NF 1 12.0 11.0 0.5 3.4 3.6 3.8 3=1.85V CTL NJG1123PB5 (800MHz) @High Gain , V DD INV 3.4 3.6 3.8 3=1.85V CTL NJG1123PB5 NJG1123PB5 (800MHz) @High Gain OIP3, IIP3 vs OIP3 IIP3 2.4 2.6 2.8 3 3.2 3 (V) DD INV Condition Ta=+25 °C , f1=885MHz, f2=f1+100kHz, Pin=-30dBm, V 1=1.85V, V 2=0V, V 3=1.85V CTL CTL CTL VSWR vs ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (800MHz band High Gain Mode) NJG1123PB5 (800MHz) @High Gain I vs 3 1.5 1 0.5 0 2.4 2.6 2 Condition Ta=+25 °C , RF=OFF V 1=1.85V, V 2=0V, V CTL CTL - INV 3.2 3.4 3.6 3.8 (V) INV 3=1.85V CTL ...
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... V CTL CTL NJG1123PB5 (800MHz) @High Gain 4.5 20.0 4 18.0 3.5 16.0 3 14.0 2.5 12 10.0 1.5 8.0 1 6.0 0.5 4 100 o C) 3=1.85V CTL NJG1123PB5 (800MHz) @High Gain 3.5 2.5 1.5 0 100 o C) 3=1.85V CTL NJG1123PB5 OIP3, IIP3 vs. Temperature OIP3 IIP3 -50 - Ambient Temperature ( Condition f1=885MHz, f2=f1+100kHz, Pin=-30dBm =2.7V, DD INV V 1=1 ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (800MHz band High Gain Mode) NJG1123PB5 (800MHz) @High Gain I vs. Temperature 2.5 2 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL - 100 o C) 3=1.85V CTL ...
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... ELECTRICAL CHARACTERISTICS (800MHz band High Gain Mode) NJG1123PB5 - 29 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (800MHz band High Gain Mode) NJG1123PB5 J0070 (800MHz) @High Gain k factor vs. frequency frequency (GHz ...
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... Condition Ta=+25 °C , f=750~1GHz =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL NJG1123PB5 2=0V, V 3=0V CTL NJG1123PB5 0.9 0.95 1 3=0V CTL NJG1123PB5 J0070 (800MHz) @Low Gain Gain, IDD vs. Pin -2 -4 Gain -6 -8 -10 P-1dB(IN)=+11.0dBm -12 -14 -40 -30 -20 -10 0 Pin (dBm) Condition Ta=+25 °C , f=885MHz =2.7V, DD INV V 1=1.85V, V ...
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... J0070 (800MHz) @Low Gain NJG1123PB5 P-1dB(IN) vs. frequency P-1dB(IN 0.85 0.86 0.87 0.88 frequency (GHz) Condition Ta=+25 °C , f=850~920MHz =2.7V, DD INV V 1=1.85V, V CTL CTL - 32 - NJG1123PB5 0.89 0.9 0.91 0.92 2=0V, V 3=0V CTL J0070 (800MHz) @Low Gain OIP3, IIP3 vs. frequency 10 8 OIP3 0.85 0.86 0.87 0.88 0.89 0.9 frequency (GHz) Condition Ta=+25 °C f1=850~920MHz, f2=f1+100kHz, Pin=-20dBm ...
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... NF 14 12.0 10 8.0 2 6.0 1 4.0 2.0 0 3.4 3.6 3.8 3=0V CTL NJG1123PB5 (800MHz) @Low Gain , V DD INV 3.5 2.5 1.5 0.5 3.4 3.6 3.8 3=0V CTL NJG1123PB5 NJG1123PB5 (800MHz) @Low Gain OIP3, IIP3 vs IIP3 OIP3 2.4 2.6 2.8 3 3.2 3 (V) DD INV Condition Ta=+25 °C , f1=885MHz, f2=f1+100kHz, Pin=-20dBm, V 1=1.85V, V 2=0V, V 3=0V CTL CTL CTL VSWR vs INV 4 3 ...
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... ELECTRICAL CHARACTERISTICS (800MHz band Low Gain Mode) NJG1123PB5 (800MHz) @Low Gain IMD3 vs. V -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 INV Condition Ta=+25 °C , f1=885MHz, f2=f1+100kHz, Pin=-20dBm, V 1=1.85V, V 2=0V, V CTL CTL - 34 - NJG1123PB5 (800MHz) @Low Gain , V DD INV 0.05 0.04 0.03 0.02 0.01 0 3.2 3.4 3.6 3.8 2.4 (V) 3=0V CTL I vs INV I DD 2.6 2 ...
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... NJG1123PB5 (800MHz) @Low Gain OIP3, IIP3 vs. Temperature 9 18.0 8 16 12.0 5 10.0 4 8.0 3 6.0 2 4.0 1 2.0 75 100 - Condition f1=885MHz, f2=f1+100kHz, Pin=-20dBm NJG1123PB5 (800MHz) @Low Gain 4 3.5 3 2.5 2 1 100 - Condition f=885MHz NJG1123PB5 IIP3 OIP3 - Ambient Temperature ( =2.7V, ...
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... NJG1123PB5 (800MHz) @Low Gain IMD3 vs. Temperature -60 -65 -70 IMD3 -75 -80 -50 - Ambient Temperature ( Condition f1=885MHz, f2=f1+100kHz, Pin=-20dBm =2.7V, DD INV V 1=1.85V, V 2=0V, V CTL CTL - 36 - NJG1123PB5 (800MHz) @Low Gain 50 75 100 o C) 3=0V CTL I vs. Temperature DD 0.5 0.4 0.3 0 0.1 0 -50 - Ambient Temperature ( Condition RF=OFF ...
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... ELECTRICAL CHARACTERISTICS (800MHz band Low Gain Mode) NJG1123PB5 - 37 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (800MHz band Low Gain Mode) NJG1123PB5 J0070 (800MHz) @Low Gain k factor vs. frequency frequency (GHz ...
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... J0070 (1.7GHz) @High Gain Pout vs. Pin Pout -5 -10 -15 -20 -25 -40 -30 -20 Pin (dBm) Condition Ta=+25 °C , f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL NJG1123PB5 (1.7GHz) @High Gain NF vs. frequency 4 3 1.5 1 0.5 0 1.7 1.75 1.8 1.85 frequency (GHz) Condition Ta=+25 °C , f=1.7~2GHz =2.7V, DD INV V 1=0V, V 2=1.85V, V ...
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... P-1dB(IN) vs. frequency - P-1dB(IN) -10 -12 -14 -16 -18 1.8 1.82 1.84 1.86 frequency (GHz) Condition Ta=+25 °C , f=1.8~1.92GHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL - 40 - NJG1123PB5 1.88 1.9 1.92 1.8 Condition 3=1.85V CTL J0070 (1.7GHz) @High Gain OIP3, IIP3 vs. frequency OIP3 IIP3 1.82 1.84 1.86 1.88 1.9 frequency (GHz) Ta=+25 °C , f1=1.8~1.92GHz, f2=f1+100kHz, Pin=-30dBm, ...
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... INV Condition Ta=+25 °C , f=1860MHz, V 1=0V, V 2=1.85V, V CTL CTL NJG1123PB5 (1.7GHz) @High Gain , V INV 4.5 20.0 4 19.0 18.0 3.5 17.0 3 2.5 16.0 2 15.0 1.5 14.0 NF 13.0 1 0.5 12.0 2.4 3.4 3.6 3.8 Condition 3=1.85V CTL NJG1123PB5 (1.7GHz) @High Gain , V INV 4 3.5 3 2.5 2 1.5 1 0.5 0 3.4 3.6 3.8 2.4 Condition 3=1.85V CTL NJG1123PB5 OIP3, IIP3 vs INV OIP3 IIP3 2.6 2.8 3 3.2 3.4 3 (V) DD INV Ta=+25 °C , f1=1860MHz, f2=f1+100kHz, ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain Mode) NJG1123PB5 (1.7GHz) @High Gain I vs 3 1.5 1 0.5 0 2.4 2.6 2 Condition Ta=+25 °C , RF=OFF V 1=0V, V 2=1.85V, V CTL CTL - INV 3.2 3.4 3.6 3.8 (V) INV 3=1.85V CTL ...
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... V 2=1.85V, V CTL CTL NJG1123PB5 (1.7GHz) @High Gain 4.5 19.0 4 18.0 3.5 17.0 3 16.0 2.5 15.0 2 14.0 NF 1.5 13.0 1 12.0 0 100 11 3=1.85V CTL NJG1123PB5 (1.7GHz) @High Gain 4 3.5 3 2.5 2 1 100 o C) 3=1.85V CTL NJG1123PB5 OIP3, IIP3 vs. Temperature OIP3 IIP3 -50 - Ambient Temperature ( C) Condition f1=1860MHz, f2=f1+100kHz, Pin=-30dBm, ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain Mode) NJG1123PB5 (1.7GHz) @High Gain I vs. Temperature DD 4 3 1.5 1 0.5 0 -50 - Ambient Temperature ( Condition RF=OFF =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL - 100 o C) 3=1.85V CTL ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain Mode) NJG1123PB5 - 45 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain Mode) NJG1123PB5 J0070 (1.7GHz) @High Gain k factor vs. frequency frequency (GHz ...
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... CTL NJG1123PB5 20 0 -20 -40 -60 -80 -100 2 2.05 2.1 -40 Condition 3=0V CTL NJG1123PB5 J0070 (1.7GHz) @Low Gain Gain, IDD vs. Pin Gain P-1dB(IN)=+12.6dBm -30 -20 -10 0 Pin (dBm) Condition Ta=+25 °C , f=1860MHz =2.7V, DD INV V 1=0V, V 2=1.85V, V 3=0V CTL CTL CTL J0070 (1.7GHz) @Low Gain Pout, IM3 vs ...
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... P-1dB(IN) vs. frequency P-1dB(IN 1.8 1.82 1.84 1.86 frequency (GHz) Condition Ta=+25 °C , f=1.8~1.92GHz =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL - 48 - NJG1123PB5 1.88 1.9 1.92 1.8 3=0V CTL J0070 (1.7GHz) @Low Gain OIP3, IIP3 vs. frequency OIP3 IIP3 1.82 1.84 1.86 1.88 1.9 frequency (GHz) Condition Ta=+25 °C , f1=1.8~1.92GHz, f2=f1+100kHz, Pin=-16dBm ...
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... INV Condition Ta=+25 °C , f=1860MHz, V 1=0V, V 2=1.85V, V CTL CTL NJG1123PB5 (1.7GHz) @Low Gain , V DD INV 10 22 18.0 7 16.0 6 14.0 5 12.0 4 10.0 3 8.0 2 6.0 3.4 3.6 3.8 3=0V CTL NJG1123PB5 (1.7GHz) @Low Gain , V DD INV 4 3.5 3 2.5 2 1.5 1 0.5 0 3.4 3.6 3.8 3=0V CTL NJG1123PB5 OIP3, IIP3 vs IIP3 OIP3 2.4 2.6 2.8 3 3.2 3 (V) DD INV Condition Ta=+25 °C , ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz band Low gain Mode) NJG1123PB5 (1.7GHz) @Low Gain IMD3 vs -60 -65 IMD3 -70 -75 -80 2.4 2.6 2 (V) DD INV Condition Ta=+25 °C , f1=1860MHz, f2=f1+100kHz, Pin=-16dBm, V 1=0V, V 2=1.85V, V CTL CTL - 50 - NJG1123PB5 (1.7GHz) @Low Gain , V INV 0.05 0.04 0.03 0.02 0.01 0 2.4 3.4 3.6 3.8 Condition 3=0V CTL I vs INV I DD 2.6 2.8 3 3.2 3.4 V ...
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... C) 3=0V CTL NJG1123PB5 (1.7GHz) @Low Gain 3.5 2.5 1.5 0 100 o C) 3=0V CTL NJG1123PB5 NJG1123PB5 (1.7GHz) @Low Gain OIP3, IIP3 vs. Temperature IIP3 OIP3 -50 - Ambient Temperature ( Condition f1=1860MHz, f2=f1+100kHz, Pin=-16dBm =2.7V, DD INV V 1=0V, V 2=1.85V, V 3=0V CTL CTL CTL VSWR vs. Temperature ...
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... NJG1123PB5 (1.7GHz) @Low Gain IMD3 vs. Temperature -60 -65 -70 IMD3 -75 -80 -50 - Ambient Temperature ( Condition f1=1860MHz, f2=f1+100kHz, Pin=-16dBm =2.7V, DD INV V 1=0V, V 2=1.85V, V CTL CTL CTL - 52 - NJG1123PB5 (1.7GHz) @Low Gain 0.5 0.4 0.3 0.2 0 100 - Condition 3=0V I vs. Temperature - Ambient Temperature ( C) ...
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... ELECTRICAL CHARACTERISTICS (1.7GHz band Low gain Mode) NJG1123PB5 - 53 - ...
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... NJG1123PB5 ! ELECTRICAL CHARACTERISTICS (1.7GHz band Low gain Mode) NJG1123PB5 J0070 (1.7GHz) @Low Gain k factor vs. frequency frequency (GHz ...
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... CTL LNA Bypass L OFF OFF L OFF ON H OFF OFF L OFF ON H OFF OFF L H +0.3 V INV NJG1123PB5 Operating state 800MHz Band 1.7GHz Band LNA Bypass LNA OFF ON OFF OFF OFF OFF OFF ON OFF ON OFF OFF OFF ON OFF OFF OFF ON Don’t Care ...
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... NJG1123PB5 ! APPLICATION CIRCUIT GND RFIN3 (1.7GHz) RFIN3 1.8nH 2.7nH GND Logic 14 Circuit RFIN2 RFIN2 (2.1GHz ) 1.5nH 2.2nH GND 16 1 Pin INDEX RFIN1 RFIN1 (800MHz 12nH 12nH PARTS LIST L1, L2, L6, L7, L8, L10, L11 PRECAUTIONS 1) Please locate C2 close to L3. 2) Please locate C4 close to L6, L10. ...
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... RF IN2 L5 (2.1GHz IN1 (800MHz) (Top View CTL INV C5 C4 L11 L10 CTL CTL PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z PCB SIZE=35.4mmx17.0mm NJG1123PB5 RF OUT3 (1.7GHz OUT2 V (2.1GHz OUT1 (800MHz) =50Ω ...
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... NJG1123PB5 ! PACKAGE OUTLINE (FFP16-B5) Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. ...