njg1126hb6 New Japan Radio Co.,Ltd, njg1126hb6 Datasheet
njg1126hb6
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njg1126hb6 Summary of contents
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... Band LNA GaAs MMIC GENERAL DESCRIPTION NJG1126HB6 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone . This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode. ...
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... NJG1126HB6 ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL Supply voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage (High) V Control voltage (Low) Operating current1 (LNA High Gain Mode) ...
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... INV CTL CONDITIONS Exclude PCB & connector losses (IN: 0.09dB) 1 f1=fRF, f2=fRF+100kHz, Pin=-32dBm =2.7V INV CTL CONDITIONS Exclude PCB & connector losses (IN: 0.09dB) 2 F1=fRF, f2=fRF+100kHz, Pin=-16dBm NJG1126HB6 =+25° MIN TYP MAX 15.0 16.5 19.0 - 1.4 1.7 -15.5 -12 1.6 2.2 - 1.5 2.2 =0V, freq=2140MHz, T =+25° ...
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... NJG1126HB6 TERMINAL INFOMATION No. SYMBOL Supply voltage terminal for internal logic circuit (inverter). Please place a bypass 1 VINV capacitor between this and GND for avoiding RF noise from outside. 2 GND Ground terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this ...
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... NF 1 2.05 2.1 frequency (GHz) =V =2.7V, V =1.85V, Zs=Zl=50Ω DD INV CTL P-1dB(IN)=-12.0dBm - IIP3=+0.8dBm - 2.15 2.2 2.25 2.3 NJG1126HB6 Gain, I vs. Pin DD (f=2140MHz) 20 Gain P-1dB(IN)=-12.0dBm 6 -40 -30 -20 -10 0 Pin (dBm) OIP3, IIP3 vs. frequency (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-32dBm OIP3 16 14 ...
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... NJG1126HB6 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+25°C, V Gain, NF vs. V (f=2140MHz Gain 2 OIP3, IIP3 vs. V (f1=2140MHz, f2=f1+100kHz, Pin=-32dBm OIP3 2 vs (RF OFF 2 ...
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... Zs=Zl=50Ω DD INV CTL 100 IIP3 100 100 o C) NJG1126HB6 P-1dB(IN) vs. Temperature (f=2140MHz -10 P-1dB(IN) -12 -14 -16 -18 -20 - Temperature ( C) VSWR vs. Temperature (f=2140MHz - Temperature ( C) 100 ...
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... NJG1126HB6 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) General Conditions: Ta=+25° =2.7V, V =1.85V, Zs=Zl=50Ω DD INV CTL ...
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... V =0V, Zs=Zl=50Ω DD INV CTL - IIP3=+14.3dBm - 2.2 2.25 2.3 NJG1126HB6 Gain, I vs. Pin DD (f=2140MHz Gain -8 -10 - -14 P-1dB(IN)=+11.5dBm -16 -40 -30 -20 -10 0 Pin (dBm) OIP3, IIP3 vs. frequency (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm OIP3 6 ...
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... NJG1126HB6 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+25°C, V Gain, NF vs. V (f=2140MHz Gain -8 -9 -10 -11 -12 -13 2 OIP3, IIP3 vs. V (f1=2140MHz, f2=f1+100kHz, Pin=-16dBm OIP3 2 vs (RF OFF) 1 0.8 0.6 0.4 0 =2.7V, V =0V, Zs=Zl=50Ω DD INV ...
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... Zs=Zl=50Ω DD INV CTL 100 IIP3 100 100 o C) NJG1126HB6 P-1dB(IN) vs. Temperature (f=2140MHz P-1dB(IN - Temperature ( C) VSWR vs. Temperature (f=2140MHz - Temperature ( C) 100 ...
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... NJG1126HB6 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) General Conditions: Ta=+25° =2.7V, V =0V, Zs=Zl=50Ω DD INV CTL ...
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... TEST PCB LAYOUT CTL (Top View) GND 4 Bias Circuit Logic Circuit 8 GND (Top View INV NJG1126HB6 L4 C1 12nH 4pF RFOUT 3 L3 10nH GND 1000pF 2 VINV 1 V =2.7V INV C3 1000pF 1 Pin INDEX PARTS LIST Parts ID Comment ...
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... NJG1126HB6 PACKAGE OUTLINE (USB8-B6) (TOP VIEW) 1pin INDEX TERMINAL TREAT PCB Molding material UNIT WEIGHT Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. ...