njg1127hb6 New Japan Radio Co.,Ltd, njg1127hb6 Datasheet
njg1127hb6
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njg1127hb6 Summary of contents
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... Band LNA GaAs MMIC nGENERAL DESCRIPTION NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has the function which bypasses LNA, and high gain mode or low gain mode can be chosen. High IIP3 and a low noise are achieved at the High gain mode. ...
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... NJG1127HB6 nABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL Supply voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature nELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS) PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage (High) V Control voltage (Low) V Operating current1 (LNA High Gain Mode) ...
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... =-25dBm =2.8V INV CTL CONDITIONS Exclude PCB & connector losses NF2 (IN: 0.04dB) f1=f , f2=f +100kHz =-12dBm NJG1127HB6 =880MHz, T =+25° MIN TYP MAX 13.5 15.0 17.0 - 1 1.5 2.0 - 1.5 2.0 =0V, f =880MHz, T =+25° MIN TYP MAX -4 ...
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... NJG1127HB6 nTERMINAL INFOMATION No. SYMBOL Supply voltage terminal for internal logic circuit (inverter). Please place a bypass 1 VINV capacitor between this and GND for avoiding RF noise from outside. 2 GND Ground terminal. RF signal comes out from this terminal, and goes through an external matching circuit connected to this ...
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... Gain 900 950 1000 NJG1127HB6 Gain, I vs. Pin D D (f=880MHz) Gain P-1dBin=-5.0dBm - -10 0 Pin (dBm) OIP3, IIP3 vs. frequency (f1=860~910MHz, f2=f1+100kHz, Pin=-25dBm) OIP3 870 ...
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... NJG1127HB6 nELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25° =2.8V, V =1.85V, Zs=Zl= INV CTL ...
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... INV CTL , INV 4.0 13.0 3.5 12.0 3.0 11.0 2.5 10.0 2.0 9.0 1.5 8 1.0 7.0 0.5 6.0 0.0 5.0 3.2 3.4 3.6 2.4 ( INV 20 4.0 18 3.5 16 3.0 14 2.5 12 2.0 IIP3 10 1.5 8 1.0 6 0.5 4 0.0 3.2 3.4 3.6 2.4 ( INV 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 I INV 0.0 3.0 3.2 3.4 (V) INV NJG1127HB6 P-1dB(OUT) vs INV (f=880MHz) P-1dB(OUT) 2.6 2.8 3.0 3.2 3 (V) DD INV VSWRi, VSWRo vs (f=880MHz) VSWRi VSWRo 2.6 2.8 3.0 3.2 3 (V) DD INV 3.6 INV 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3 ...
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... NJG1127HB6 nELECTRICAL CHARACTERISTICS (LNA High Gain Mode) (General Conditions: Ta=+25°C, V Gain, NF vs. Temperature (f=880MHz Gain - Temperature ( OIP3, IIP3 vs. Temperature (f1=880MHz, f2=f1+100kHz, Pin=-25dBm OIP3 - Temperature ( I vs ...
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... IIP3=+23.5dBm Gain - 900 950 1000 NJG1127HB6 Gain, I vs. Pin D D (f=880MHz) Gain P-1dBin=+10.8dBm -40 -30 -20 -10 0 Pin (dBm) OIP3, IIP3 vs. frequency (f1=860~910MHz, f2=f1+100kHz, Pin=-12dBm) OIP3 860 870 frequency (MHz) 2 ...
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... NJG1127HB6 nELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25° =2.8V, V =0V, Zs=Zl= INV CTL ...
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... INV 3.0 IIP3 0.0 3.0 3.2 3.4 2.4 (V) INV , INV 20 I INV 3.0 3.2 3.4 (V) INV NJG1127HB6 P-1dB(OUT) vs INV (f=880MHz) P-1dB(OUT) 2.6 2.8 3.0 3 VSWRi, VSWRo vs (f=880MHz) VSWRi VSWRo 2.6 2.8 3.0 3 INV 3.6 INV 4.0 3.5 3.0 2.5 2.0 1.5 1 ...
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... NJG1127HB6 nELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) (General Conditions: Ta=+25°C, V Gain, NF vs. Temperature (f=880MHz Gain - -40 - Temperature ( OIP3, IIP3 vs. Temperature (f1=880MHz, f2=f1+100kHz, Pin=-12dBm OIP3 -40 - Temperature ( I vs. Temperature DD (RF OFF ...
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... PCB LAYOUT (Top View CTL (Top View Bias Circuit 6 Logic Circuit OUT INV NJG1127HB6 C1 L3 1000pF 12nH RFOUT 3 L4 12nH V =2. 1000pF V INV 1 1 Pin INDEX Parts List Parts ID Notes TAIYO-YUDEN L1~L4 (HK1005 series) MURATA ...
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... NJG1127HB6 nPACKAGE OUTLINE (USB8-B6) (TOP VIEW) 1pin INDEX TERMINAL TREAT PCB Molding material UNIT WEIGHT Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. ...