njg1131ha8 New Japan Radio Co.,Ltd, njg1131ha8 Datasheet
njg1131ha8
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njg1131ha8 Summary of contents
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... UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1131HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC features good gain flatness, and low gain characteristic in out-of-band. This IC achieves low current consumption, low noise figure and low distortion. Also, this IC is integrated the ESD protection circuit ...
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... NJG1131HA8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) General conditions: V PARAMETERS SYMBOL Operating voltage Operating Current ELECTRICAL CHARACTERISTICS 2 (RF) General conditions: V PARAMETERS SYMBOL Operating Frequency Small signal gain Gain flatness ...
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... RF output terminal. This terminal requires the external matching circuit as 5 RFOUT shown in the application circuit. Power supply pin of the bias circuit. Please supply the voltage as same as the 6 VG LNA voltage. CAUTION 1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible. NJG1131HA8 DESCRIPTION - 3 - ...
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... NJG1131HA8 ELECTRICAL CHARACTERISTICS ( Conditions: T =+25°C, VDD=2.7V Pout vs. Pin (fRF=620MHz -10 Pout -15 -20 -25 -30 -35 -40 -35 -30 -25 -20 Pin (dBm) Pout, IM3 vs. Pin (f1=620MHz, f2=620.1MHz Pout -20 -40 -60 -80 IM3 -100 -40 -30 -20 Pin (dBm) P-1dB(IN) vs. Frequency 5 0 P-1dB(IN) -5 -10 -15 400 ...
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... NJG1131HA8 Gain, NF vs. VDD (fRF=620MHz) Gain VDD (V) IIP3, OIP3 vs. VDD (f1=620MHz, f2=620.1MHz, Pin=-28dBm) OIP3 IIP3 VDD (V) VSWR vs. VDD (fRF=470~770MHz) VSWRo(max.) VSWRi(max ...
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... NJG1131HA8 ELECTRICAL CHARACTERISTICS ( Conditions: VDD=2.7V Gain, NF vs. Temp. (fRF=620MHz) 12 Gain -50 0 Temperature (C IIP3, OIP3 vs. Temp. (f1=620MHz, f2=620.1MHz, Pin=-28dBm OIP3 15 10 IIP3 5 0 -50 0 Temperature (C VSWR vs. Temp. (fRF=470~770MHz VSWRo(max VSWRi(max -50 0 Temperature ( =50 ohm, with application circuit ...
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... ELECTRICAL CHARACTERISTICS ( Conditions: T =+25°C, VDD=2.7V S11, S22 VSWR S11, S22 (~20GHz) =Z =50 ohm, with application circuit NJG1131HA8 S21, S12 Zin, Zout S21, S12 (~20GHz ...
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... NJG1131HA8 TEST CIRCUIT RFIN C1 L1 68pF 33nH TEST PCB LAYOUT RF IN PRECAUTIONS [ DC-Blocking capacitor, and DC-feed inductor. [2] L2, L3, and C2 formed the output matching circuit. [ bypass capacitor. [4] Ground terminals (1pin, 3pin and 4pin) should be connected with ground plane as close as possible in order to limit ground path induction ...
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... Attenuator IF and IM3 Measurement Block Diagram for IIP3 RF Output RF Input DUT Port2 Port1 Network Analyzer RF Output RF Input DUT Input N.S. Output NF Analyzer Meter Noise Figure Measurement Block Diagram RF Input Power Comb. NJG1131HA8 V =2.7V DD VDD=2.9V V =2.7V DD VDD=2.9V V =2. Output Spectrum DUT Analyzer - 9 - ...
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... NJG1131HA8 PACKAGE OUTLINE (USB6-A8) 0.2 (MIN0.15 0.4 1.0±0.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. ...