njg1134ha8 New Japan Radio Co.,Ltd, njg1134ha8 Datasheet
njg1134ha8
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njg1134ha8 Summary of contents
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... UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1134HA8 is a low noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA pass-through function to select high gain mode or low gain mode by single bit control. Also, this IC is integrated the ESD protection circuit. ...
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... NJG1134HA8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: V PARAMETERS SYMBOL Operating voltage Control voltage (High) Control voltage (Low) Operating current1 Operating current2 Control current - 2 - CONDITIONS V DD ...
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... Exclude PCB & connector losses, f =620~710MHz*1 RF Exclude PCB & connector losses, f =710~770MHz*1 RF f1=f , f2=f +100kHz =-28dBm IN = 2.8V CTL a CONDITIONS f RF Exclude PCB & connector losses*2 f1=f , f2=f +100kHz =-15dBm IN NJG1134HA8 =+25° =50 ohm, with application circuit MIN TYP MAX 470 620 9.0 10.0 12.5 - 1.1 - 1.20 1.45 - 1.25 1.50 - 1.30 1.55 -9.0 -5.0 +0.0 +5.0 - 2.7 - 3.0 =+25° =50 ohm, with application circuit ...
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... NJG1134HA8 TERMINAL INFORMATION No. SYMBOL RF input terminal. The RF signal is input through the external matching circuit. 1 RFIN1 This terminal is connected with the ground through L1 shown in the application circuit. At the High gain mode, RF signal comes out from this terminal, and is input into RFIN2 terminal through L2. ...
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... P-1dB(IN)=-2.6dBm 4 -15 - IIP3=+7.2dBm - 650 700 750 800 NJG1134HA8 Gain, IDD vs. Pin (f=620MHz) Gain IDD P-1dB(IN)=-2.6dBm -40 -35 -30 -25 -20 -15 -10 Pin (dBm) Gain, NF vs. Frequency Gain (Exclude PCB, Connector Losses) 4 400 ...
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... NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25°C, V =2.8V K-factor vs. Frequency 5000 10000 Frequency (MHz) P-1dB(IN) vs. VDD (f=620MHz P-1dB(IN) -5 -10 - VDD (V) VSWR vs. VDD VSWRo(max VSWRi(max VDD ( =1.8V =50 ohm, with application circuit. ...
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... NF 1 -10 0.5 0 -15 50 100 100 100 o C) NJG1134HA8 P-1dB(IN) vs. Temp. (fRF=620MHz) P-1dB(IN) - Temperature ( C) IDD vs. Temp. (RF OFF) IDD - Temperature ( C) IDD vs. VCTL -25 C ...
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... NJG1134HA8 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: T =+25°C, V =2.8V S11, S22 VSWR S11, S22 (50MHz~20GHz =1.8V =50 ohm, with application circuit. CTL s l S21, S12 Zin, Zout S21, S12 (50MHz~20GHz) ...
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... Frequency (MHz) =0V =50 ohm, with application circuit. CTL IIP3=+23.0dBm 650 700 750 800 NJG1134HA8 Gain, IDD vs. Pin (f=620MHz) 0 -0.5 Gain -1 -1.5 -2 -2.5 P-1dB(IN)=+3.5dBm -3 -40 -30 -20 -10 0 Pin (dBm) Gain vs. Frequency 0 -0.2 -0.4 -0.6 Gain -0 ...
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... NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25°C, V =2.8V K-factor vs. Frequency 5000 10000 Frequency (MHz =0V =50 ohm, with application circuit. CTL s l 15000 20000 ...
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... VSWR vs. Temp. (fRF=470~770MHz) 3 2.5 2 VSWRo(max.) 1.5 VSWRi(max.) 1 0.5 0 -50 0 Temperature ( =Z =50 ohm, with application circuit 100 100 100 o C) NJG1134HA8 P-1dB(IN) vs. Temp. (fRF=620MHz P-1dB(IN - Temperature ( C) IDD vs. Temp. (RF OFF IDD - Temperature ( C) 100 ...
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... NJG1134HA8 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: T =+25°C, V =2.8V S11, S22 VSWR S11, S22 (50MHz~20GHz =0V =50 ohm, with application circuit. CTL s l S21, S12 Zin, Zout S21, S12 (50MHz~20GHz) ...
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... All external parts are placed as close as possible to the IC. RFIN1 GND 6 1 Bias Circuit 2 3 RFIN2 RFOUT1 VDD L1 RF OUT NJG1134HA8 VCTL V =1.8V or 0.0V CTL 5 Logic Circuit C3 68pF 4 RF OUT RFOUT2 Parts List Parts ID MURATA L1, L3 (LQP03T series) TAIYO-YUDEN ...
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... NJG1134HA8 MEASUREMENT BLOCK DIAGRAM V =1.8V or 0.0V CTL 2dB freq.1 Attenuator Signal Generator Signal Generator 2dB freq.2 Attenuator - Input DUT Network Analyzer S parameter Measurement Block Diagram V =1.8V CTL RF Input DUT Noise Source NF Analyzer Noise Figure Measurement Block Diagram V =1.8V or 0.0V CTL RF Input Power Comb. ...
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... This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. S 0.03 S 0.2±0.04 C0.1 R0.05 1 0.1±0.05 Photo resist coating 2 0.2±0.07 NJG1134HA8 TERMINAL TREAT :Au Substrate :FR5 Molding material :Epoxy resin UNIT :mm WEIGHT :1.1mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions ...