njg1133md7 New Japan Radio Co.,Ltd, njg1133md7 Datasheet

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njg1133md7

Manufacturer Part Number
njg1133md7
Description
Njg1133md7 W-cdma Triple Band Lna Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet

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Part Number:
njg1133md7-TE1
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njg1133md7-TE1
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12 000
[High Gain Mode]
[Low Gain Mode]
[Variable gain width]
Ver.2008-06-23
Note: Specifications and description listed in this datasheet are subject to change without prior notice.
GENERAL DISCRIPTION
FEATURES
PIN CONFIGURATION
mode or low gain mode. The LNA of 1.7GHz band can be used
to 1.5GHz band by changing application circuit.
●High gain
●Low noise figure
●High input IP3
●Gain
●High input IP3
/UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band.
NJG1133MD7 is a triple band LNA IC designed for W-CDMA
An ultra-small and ultra-thin package of EQFN14-D7 is adopted.
This IC has a LNA pass-through function to select high gain
Low operation voltage
Low control voltage
Low current consumption
Small and thin package
1pin index
13
12
13
14
RFIN2
VCTL3
RFIN1
W-CDMA Triple Band LNA GaAs MMIC
GND
GND
11
1
Circuit
Logic
VCTL2
RFIN3
800MHz Band
10
2.1GHz Band
2
(Top View)
Circuit
Bias
Circuit
Bias
VCTL1
GND
Circuit
Bias
1.7GHz Band
1.7GHz Band
(1.5GHz Band)
9
3
+2.8V typ.
+1.8V typ.
2.3mA typ. @High Gain Mode
48μA typ. @Low Gain Mode
EQFN14-D7 (Package size: 1.6 x 1.6 x 0.397mm typ.)
16.0dB typ.
1.35dB typ.
1.40dB typ.
1.55dB typ.
-2.0dBm typ.
0dBm typ.
0dBm typ.
-3.5dB typ.
-3.0dB typ.
-4.0dB typ.
+12dBm typ.
+12dBm typ.
+15dBm typ.
+15dBm typ.
19.5dB typ.
19.0dB typ.
+0.5dBm typ. @f
20.0dB typ.
GND
GND
8
4
RFOUT3
RFOUT2
RFOUT1
7
6
5
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
@f
Pin Connection
1. GND
2. VCTL2
3. VCTL1
4. GND
5. RFOUT1 (800MHz)
6. RFOUT2 (2.1GHz)
7. RFOUT3 (1.7G/1.5GHz)
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
RF
=2140MHz, 885MHz, 1860MHz, 1495MHz
=2140MHz, 1860MHz
=885MHz
=1495MHz
=2140.0+2140.1MHz, Pin=-30dBm
=885.0+885.1MHz, Pin=-30dBm
=1860.0+1860.1MHz, Pin=-30dBm
=1495.0+1495.1MHz, Pin=-30dBm
=2140MHz
=885MHz, 1495MHz
=1860MHz
=2140.0+2140.1MHz, Pin=-16dBm
=885.0+885.1MHz, Pin=-20dBm
=1860.0+1860.1MHz, Pin=-16dBm
=1495.0+1495.1MHz, Pin=-16dBm
=2140MHz, 1495MHz
=885MHz
=1860MHz
8. GND
9. GND
10. RFIN3 (1.7G/1.5GHz)
11. GND
12. RFIN2 (2.1GHz)
13. RFIN1 (800MHz)
14. VCTL3
NJG1133MD7
PACKAGE OUTLINE
NJG1133MD7
- 1 -

Related parts for njg1133md7

njg1133md7 Summary of contents

Page 1

... W-CDMA Triple Band LNA GaAs MMIC GENERAL DISCRIPTION NJG1133MD7 is a triple band LNA IC designed for W-CDMA /UMTS cellular phone of 2.1GHz, 1.7GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. The LNA of 1.7GHz band can be used to 1 ...

Page 2

... NJG1133MD7 ABSOLUTE MAXIMUM RATINGS PARAMETERS Operating voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Control voltage1 (High) Control voltage1 (Low) Control voltage 2 (High) Control voltage 2 (Low) Control voltage 3 (High) Control voltage 3 (Low) Operating current 1 2 ...

Page 3

... VSWRi1 VSWRo1 1=0V, V 2=0V, V 3=0V, fRF=2140MHz, T CTL CTL CTL CONDITIONS Exclude PCB & connector losses Gain2 (IN: 0.09dB, OUT: 0.36dB) Exclude PCB & connector losses NF2 (IN: 0.09dB) f1=fRF, f2=fRF+100kHz, IIP3_2 Pin=-16dBm VSWRi2 VSWRo2 NJG1133MD7 =+25° =50Ω MIN TYP MAX UNITS 14.5 16.0 17 1.35 1.5 dB -15.0 -11 ...

Page 4

... NJG1133MD7 ELECTRICAL CHARACTERISTICS 4 (800MHz Band High Gain Mode) (General conditions: V =2.7V PARAMETERS Small signal gain 3 Noise figure 3 Input Power at 1dB gain P-1dB(IN)_3 compression point 3 Input 3rd order intercept point 3 RF Input VSWR 3 RF Output VSWR 3 ELECTRICAL CHARACTERISTICS 5 (800MHz Band Low Gain Mode) (General conditions ...

Page 5

... V CTL CTL CTL SYMBOL CONDITIONS Exclude PCB & connector losses 6 Gain (IN: 0.10dB, OUT: 0.31dB) Exclude PCB & connector losses 6 NF (IN: 0.10dB) IN )_6 f1=fRF, f2=fRF+100kHz, 6 IIP3_ Pin=-16dBm VSWRi6 VSWRo6 NJG1133MD7 3=1.8V, fRF=1860MHz, T CTL MIN TYP 14.5 16.0 - 1.35 -16.0 -8.0 -9 2.1 - 1.8 3=0V, fRF=1860MHz, T =+25° MIN TYP -5 ...

Page 6

... NJG1133MD7 ELECTRICAL CHARACTERISTICS 8 (1.5GHz Band High Gain Mode) (General conditions: V =2.7V =50Ω, with application circuit PARAMETERS Small signal gain 7 Noise figure 7 Input Power at 1dB gain P-1dB( compression point 7 Input 3rd order intercept point 7 RF Input VSWR 7 RF Output VSWR 7 ELECTRICAL CHARACTERISTICS 9 (1 ...

Page 7

... Notes: Ground terminal (No. 11) should be connected with the ground plane as short as possible. 2.1GHz Band 3 LNA Bypass OFF ON ON OFF OFF ON OFF OFF OFF ON OFF OFF OFF ON OFF OFF DESCRIPTION NJG1133MD7 Operating state 1.7GHz(or 1.5GHz) 800MHz Band Band LNA Bypass LNA OFF ON OFF OFF OFF OFF OFF ON OFF ON OFF OFF OFF ON OFF ...

Page 8

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) 2.1GHz @High Gain Pout vs. Pin (f=2140MHz Pout -10 -15 -20 -25 P-1dB(IN)=-9.3dBm -30 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25℃, V =2.7V 1=0V, V CTL CTL 2.1GHz @High Gain NF, Gain vs. frequency (f=2.0~2.3GHz) 4 3.5 3 2 0.5 (Exclude PCB, Connector Losses) ...

Page 9

... Condition Ta=+25℃ 2.7V 1=0V, V 2=0V, V CTL CTL 2.1 Condition Ta=+25℃, V 3=1.8V V CTL NJG1133MD7 2.1GHz @High Gain OIP3, IIP3 vs. frequency (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-30dBm) OIP3 IIP3 2.12 2.14 2.16 2.18 frequency (GHz) = 2.7V, DD 1=0V, V 2=0V, V 3=1.8V CTL CTL CTL 2 ...

Page 10

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) 2.1GHz @High Gain Gain Gain 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=2140MHz, V 1=0V, V 2=0V, V CTL CTL 2.1GHz @High Gain P-1dB(IN) vs P-1dB(IN) -9 -10 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, ...

Page 11

... ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) 2.1GHz @High Gain I vs 3 1.5 1 0.5 0 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF, V 1=0V, V 2=0V, V CTL CTL 3.2 3.4 3.6 3=1.8V CTL NJG1133MD7 - 11 - ...

Page 12

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) 2.1GHz @High Gain Gain, NF vs. Temperature (f=2.14GHz, V =2.7V, V 1=0V CTL Gain (Exclude PCB, Connector Losses) 11 -60 -40 - Temperature ( 2.1GHz @High Gain P-1dB(IN) vs. Temperature (f=2.14GHz, V =2.7V, V 1=0V CTL - ...

Page 13

... ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) 2.1GHz @High Gain I vs. Temperature DD (V =2.7V, V 1=0V, V 2=0V CTL CTL CTL -60 -40 - Temperature ( 3=1.8V, RF=OFF 100 C) NJG1133MD7 - 13 - ...

Page 14

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) Condition:Ta=+25℃ =2.7V, V 1=0V, V 2=0V CTL CTL 3=1.8V CTL ...

Page 15

... ELECTRICAL CHARACTERISTICS (2.1GHz band High Gain mode) Condition:Ta=+25℃, V 2.1GHz @High Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=0V, V 2=0V CTL CTL 15 20 NJG1133MD7 3=1.8V CTL - 15 - ...

Page 16

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 2.1GHz @Low Gain Pout vs. Pin (f=2140MHz -10 -20 Pout -30 -40 P-1dB(IN)=+14.1dBm -50 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25℃ 2.7V 1=0V, V 2=0V, V CTL CTL 2.1GHz @Low Gain NF, Gain vs. frequency (f=2.0~2.3GHz (Exclude PCB, Connector Losses) ...

Page 17

... Condition Ta=+25℃ 2.7V 1=0V, V 2=0V, V CTL CTL (f1=2.1~2.2GHz, f2=f1+100kHz, Pin=-16dBm 2.1 Condition 3=0V CTL NJG1133MD7 2.1GHz @Low Gain OIP3, IIP3 vs. frequency IIP3 OIP3 2.12 2.14 2.16 2.18 2.2 frequency (GHz) Ta=+25℃ 2.7V 1=0V, V 2=0V, V 3=0V CTL CTL CTL ...

Page 18

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 2.1GHz @Low Gain Gain Gain - 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=2140MHz, V 1=0V, V 2=0V, V CTL CTL 2.1GHz @Low Gain P-1dB(IN) vs P-1dB(IN 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=2140MHz, ...

Page 19

... ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 2.1GHz @Low Gain I vs 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF, V 1=0V, V 2=0V, V CTL CTL 3.2 3.4 3.6 3=0V CTL NJG1133MD7 - 19 - ...

Page 20

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 2.1GHz @Low Gain Gain, NF vs. Temperature (f=2.14GHz, V =2.7V, V 1=0V CTL -1 -2 Gain - (Exclude PCB, Connector Losses) -9 -60 -40 - Temperature ( 2.1GHz @Low Gain P-1dB(IN) vs. Temperature (f=2.14GHz, V =2.7V, V 1=0V CTL 20 18 ...

Page 21

... ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) 2.1GHz @Low Gain I vs. Temperature DD (V =2.7V, V 1=0V, V 2=0V CTL CTL -60 -40 - Temperature ( 3=0V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 21 - ...

Page 22

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) Condition:Ta=+25℃ =2.7V, V 1=0V, V 2=0V CTL CTL 3=0V CTL ...

Page 23

... ELECTRICAL CHARACTERISTICS (2.1GHz band Low Gain mode) Condition:Ta=+25℃, V 2.1GHz @Low Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=0V, V 2=0V CTL CTL 15 20 NJG1133MD7 3=0V CTL - 23 - ...

Page 24

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) 800MHz @High Gain Pout vs. Pin (f=885MHz Pout -10 -15 -20 -25 P-1dB(IN)=-9.3dBm -30 -40 -30 -20 Pin (dBm) Condition Ta=+25℃ 2.7V 1=1.8V, V 2=0V, V CTL CTL 800MHz @High Gain NF, Gain vs. frequency (f=750~1000MHz) 4 3.5 3 2 0.5 (Exclude PCB, Connector Losses) ...

Page 25

... CTL CTL (f1=860~910MHz, f2=f1+100kHz, Pin=-30dBm OIP3 900 910 860 Condition Ta=+25℃ 3=1.8V V CTL CTL NJG1133MD7 800MHz @High Gain OIP3, IIP3 vs. frequency IIP3 -3 -4 870 880 890 900 910 frequency (MHz) = 2.7V, 1=1.8V, V 2=0V, V 3=1.8V CTL CTL ...

Page 26

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) 800MHz @High Gain Gain Gain 2.2 2.4 2.6 2.8 V (V) DD Condition Ta=+25℃, f=885MHz, V 1=1.8V, V CTL CTL 800MHz @High Gain P-1dB(IN) vs P-1dB(IN) -9 -10 2.2 2.4 2.6 2.8 V (V) DD Condition Ta=+25℃, f=885MHz, V 1=1.8V, V CTL ...

Page 27

... ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) 800MHz @High Gain I vs 3 1.5 1 0.5 0 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF V 1=1.8V, V 2=0V, V CTL CTL DD 3.2 3.4 3.6 3=1.8V CTL NJG1133MD7 - 27 - ...

Page 28

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) 800MHz @High Gain Gain, NF vs. Temperature (f=885MHz, V =2.7V, V 1=1.8V CTL 19 18 Gain (Exclude PCB, Connector Losses) 11 -60 -40 - Temperature ( 800MHz @High Gain P-1dB(IN) vs. Temperature (f=885MHz, V =2.7V, V 1=1.8V CTL - ...

Page 29

... ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) 800MHz @Low Gain I vs. Temperature DD (V =2.7V, V 1=1.8V, V 2=0V CTL CTL -60 -40 - Temperature ( 3=0V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 29 - ...

Page 30

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) Condition:Ta=+25℃ 2.7V, V 1=1.8V, V 2=0V CTL CTL 3=1.8V CTL ...

Page 31

... ELECTRICAL CHARACTERISTICS (800MHz band High Gain mode) Condition:Ta=+25℃, V 800MHz @High Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=1.8V, V 2=0V CTL CTL 15 20 NJG1133MD7 3=1.8V CTL - 31 - ...

Page 32

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) 800MHz @Low Gain Pout vs. Pin (f=885MHz -10 -20 Pout -30 -40 P-1dB(IN)=+17.7dBm -50 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25℃ 2.7V 1=1.8V, V CTL CTL 800MHz @Low Gain NF, Gain vs. frequency (f=750~1000MHz (Exclude PCB, Connector Losses) ...

Page 33

... CTL CTL OIP3, IIP3 vs. frequency (f1=860~910MHz, f2=f1+100kHz, Pin=-20dBm OIP3 10 9 900 910 860 Condition Ta=+25℃ 3=0V V CTL CTL NJG1133MD7 800MHz @Low Gain IIP3 870 880 890 900 910 frequency (MHz) = 2.7V, 1=1.8V, V 2=0V, V 3=0V CTL CTL - 33 - ...

Page 34

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) 800MHz @Low Gain Gain Gain - 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=885MHz, V 1=1.8V, V 2=0V, V CTL CTL 800MHz @Low Gain P-1dB(IN) vs P-1dB(IN 2.2 2.4 2.6 2.8 V (V) DD Condition Ta=+25℃, f=885MHz, V 1=1.8V, V CTL ...

Page 35

... ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) 800MHz @Low Gain I vs 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF V 1=1.8V, V 2=0V, V CTL CTL 3.2 3.4 3.6 3=0V CTL NJG1133MD7 - 35 - ...

Page 36

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) 800MHz @Low Gain Gain, NF vs. Temperature (f=885MHz, V =2.7V, V 1=1.8V CTL -1 -2 Gain - (Exclude PCB, Connector Losses) -9 -60 -40 - Temperature ( 800MHz @Low Gain P-1dB(IN) vs. Temperature (f=885MHz, V =2.7V, V 1=1.8V CTL 20 18 ...

Page 37

... ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) 800MHz @Low Gain I vs. Temperature DD (V =2.7V, V 1=1.8V, V 2=0V CTL CTL -60 -40 - Temperature ( 3=0V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 37 - ...

Page 38

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) Condition:Ta=+25℃ 2.7V, V 1=1.8V, V 2=0V CTL CTL 3=0V CTL ...

Page 39

... ELECTRICAL CHARACTERISTICS (800MHz band Low Gain mode) Condition:Ta=+25℃, V 800MHz @Low Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=1.8V, V 2=0V CTL CTL 15 20 NJG1133MD7 3=0V CTL - 39 - ...

Page 40

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) 1.7GHz @High Gain Pout vs. Pin (f=1860MHz Pout -10 -15 -20 -25 P-1dB(IN)=-9.0dBm -30 -40 -30 -20 Pin (dBm) Condition Ta=+25℃ 2.7V 1=0V, V 2=1.8V, V CTL CTL 1.7GHz @High Gain NF, Gain vs. frequency (f=1.7GHz~2.0GHz) 4 3.5 3 2 0.5 (Exclude PCB, Connector Losses ...

Page 41

... P-1dB(IN) vs. frequency (f=1.84~1.88GHz P-1dB(IN) -10 -12 -14 -16 -18 1.83 1.84 1.85 1.86 frequency (GHz) Condition Ta=+25℃ 2.7V 1=0V, V 2=1.8V, V CTL CTL 1.87 1.88 1.89 3=1.8V CTL NJG1133MD7 1.7GHz @High Gain OIP3, IIP3 vs. frequency (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-30dBm OIP3 1.8 1.82 1.84 1.86 1.88 frequency (GHz) Condition Ta=+25℃ 2.7V 1=0V, V 2=1.8V, V CTL CTL CTL ...

Page 42

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) 1.7GHz @High Gain Gain Gain 2.2 2.4 2.6 2.8 V (V) DD Condition Ta=+25℃, f=1860MHz, V 1=0V, V 2=1.8V, V CTL CTL 1.7GHz @High Gain P-1dB(IN) vs P-1dB(IN -10 2.2 2.4 2.6 2.8 V (V) DD Condition Ta=+25℃, ...

Page 43

... ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) 1.7GHz @High Gain I vs 3 1.5 1 0.5 0 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF V 1=0V, V 2=1.8V, V CTL CTL 3.2 3.4 3.6 3=1.8V CTL NJG1133MD7 - 43 - ...

Page 44

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) 1.7GHz @High Gain Gain, NF vs. Temperature (f=1860MHz, V =2.7V, V 1=0V CTL 19 18 Gain (Exclude PCB, Connector Losses) 11 -60 -40 - Temperature ( 1.7GHz @High Gain P-1dB(IN) vs. Temperature (f=1860MHz, V =2.7V, V 1=0V CTL - ...

Page 45

... ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) 1.7GHz @High Gain I vs. Temperature DD (V =2.7V, V 1=0V, V 2=1.8V CTL CTL -60 -40 - Temperature ( 3=1.8V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 45 - ...

Page 46

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) Condition:Ta=+25℃ 2.7V, V 1=0V, V 2=1.8V CTL CTL 3=1.8V CTL ...

Page 47

... ELECTRICAL CHARACTERISTICS (1.7GHz band High Gain mode) Condition:Ta=+25℃, V 1.7GHz @High Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=0V, V 2=1.8V CTL CTL 15 20 NJG1133MD7 3=1.8V CTL - 47 - ...

Page 48

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) 1.7GHz @Low Gain Pout vs. Pin (f=1860MHz -10 -20 Pout -30 -40 P-1dB(IN)=+16.5dBm -50 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25℃ 2.7V 1=0V, V 2=1.8V, V CTL CTL 1.7GHz @Low Gain NF, Gain vs. frequency (f=1.7~2.0GHz (Exclude PCB, Connector Losses ...

Page 49

... Condition Ta=+25℃ 2.7V 1=0V, V 2=1.8V, V CTL CTL (f1=1.8~1.9GHz, f2=f1+100kHz, Pin=-16dBm OIP3 1.87 1.88 1.89 1.8 Condition Ta=+25℃, V 3=0V V CTL NJG1133MD7 1.7GHz @Low Gain OIP3, IIP3 vs. frequency IIP3 1.82 1.84 1.86 1.88 1.9 frequency (GHz) = 2.7V, DD 1=0V, V 2=1.8V, V 3=0V CTL CTL CTL ...

Page 50

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) 1.7GHz @Low Gain Gain Gain - 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=1860MHz, V 1=0V, V 2=1.8V, V CTL CTL 1.7GHz @Low Gain P-1dB(IN) vs P-1dB(IN 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=1860MHz, ...

Page 51

... ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) 1.7GHz @Low Gain I vs 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF, V 1=0V, V 2=1.8V, V CTL CTL 3.2 3.4 3.6 3=0V CTL NJG1133MD7 - 51 - ...

Page 52

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) 1.7GHz @Low Gain Gain, NF vs. Temperature (f=1860MHz, V =2.7V, V 1=0V CTL - Gain - (Exclude PCB, Connector Losses) -9 -60 -40 - Temperature ( 1.7GHz @Low Gain P-1dB(IN) vs. Temperature (f=1860MHz, V =2.7V, V 1=0V CTL 20 18 ...

Page 53

... ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) 1.7GHz @Low Gain I vs. Temperature DD (V =2.7V, V 1=0V, V 2=1.8V CTL CTL -60 -40 - Temperature ( 3=0V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 53 - ...

Page 54

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) Condition:Ta=+25℃ 2.7V, V 1=0V, V 2=1.8V CTL CTL 3=0V CTL ...

Page 55

... ELECTRICAL CHARACTERISTICS (1.7GHz band Low Gain mode) Condition:Ta=+25℃, V 1.7GHz @Low Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = =2.7V, V 1=0V CTL CTL INV 15 20 NJG1133MD7 2=1.8V, V 3=0V CTL - 55 - ...

Page 56

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 1.5GHz @High Gain Pout vs. Pin (f=1495MHz Pout -10 -15 -20 -25 P-1dB(IN)=-9.8dBm -30 -40 -30 -20 Pin (dBm) Condition Ta=+25℃ 2.7V 1=1.8V, V 2=1.8V, V CTL CTL 1.5GHz @High Gain NF, Gain vs. frequency (f=1.4~1.7GHz) 4 3.5 Gain 3 2 0.5 (Exclude PCB, Connector Losses ...

Page 57

... Condition Ta=+25℃ 2.7V 1=1.8V, V 2=1.8V, V CTL CTL (f1=1.45~1.55GHz, f2=f1+100kHz, Pin=-30dBm OIP3 1.5 1.51 1.52 1.45 3=1.8V CTL NJG1133MD7 1.5GHz @High Gain OIP3, IIP3 vs. frequency IIP3 1.475 1.5 1.525 1.55 frequency (GHz) Condition Ta=+25℃ 2.7V 1=1.8V, V 2=1.8V, V CTL CTL CTL 3=1 ...

Page 58

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 1.5GHz @High Gain Gain Gain 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=1495MHz, V 1=1.8V, V 2=1.8V, V CTL CTL 1.5GHz @High Gain P-1dB(IN) vs P-1dB(IN -10 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, ...

Page 59

... ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 1.5GHz @High Gain I vs 3 1.5 1 0.5 0 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF V 1=1.8V, V 2=1.8V, V CTL CTL 3.2 3.4 3.6 3=1.8V CTL NJG1133MD7 - 59 - ...

Page 60

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 1.5GHz @High Gain Gain, NF vs. Temperature (f=1495MHz, V =2.7V, V 1=1.8V CTL 19 18 Gain (Exclude PCB, Connector Losses) 11 -60 -40 - Temperature ( 1.5GHz @High Gain P-1dB(IN) vs. Temperature (f=1495MHz, V =2.7V, V 1=1.8V CTL - ...

Page 61

... ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) 1.5GHz @High Gain I vs. Temperature DD (V =2.7V, V 1=1.8V, V 2=1.8V CTL CTL -60 -40 - Temperature ( 3=1.8V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 61 - ...

Page 62

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) Condition:Ta=+25℃ 2.7V, V 1=1.8V, V 2=1.8V CTL CTL 3=1.8V CTL ...

Page 63

... ELECTRICAL CHARACTERISTICS (1.5GHz band High Gain mode) Condition:Ta=+25℃, V 1.5GHz @High Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = 2.7V, V 1=1.8V, V 2=1.8V CTL CTL 15 20 NJG1133MD7 3=1.8V CTL - 63 - ...

Page 64

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 1.5GHz @Low Gain Pout vs. Pin (f=1495MHz -10 -20 Pout -30 -40 P-1dB(IN)=+16.0dBm -50 -40 -30 -20 -10 Pin (dBm) Condition Ta=+25℃ 2.7V 1=1.8V, V 2=1.8V, V CTL CTL 1.5GHz @Low Gain NF, Gain vs. frequency (f=1.4~1.7GHz (Exclude PCB, Connector Losses ...

Page 65

... Condition Ta=+25℃ 2.7V 1=1.8V, V 2=1.8V, V CTL CTL (f1=1.45~1.55GHz, f2=f1+100kHz, Pin=-16dBm OIP3 1.5 1.51 1.52 1.45 Condition Ta=+25℃, V 3=0V V CTL NJG1133MD7 1.5GHz @Low Gain OIP3, IIP3 vs. frequency IIP3 1.475 1.5 1.525 1.55 frequency (GHz) = 2.7V, DD 1=1.8V, V 2=1.8V, V 3=0V CTL CTL CTL ...

Page 66

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 1.5GHz @Low Gain Gain Gain - 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=1495MHz, V 1=1.8V, V 2=1.8V, V CTL CTL 1.5GHz @Low Gain P-1dB(IN) vs P-1dB(IN 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, f=1495MHz, V 1=1 ...

Page 67

... ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 1.5GHz @Low Gain I vs 2.2 2.4 2.6 2 (V) DD Condition Ta=+25℃, RF=OFF, V 1=1.8V, V 2=1.8V, V CTL CTL 3.2 3.4 3.6 3=0V CTL NJG1133MD7 - 67 - ...

Page 68

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 1.5GHz @Low Gain Gain, NF vs. Temperature (f=1495MHz, V =2.7V, V 1=1.8V CTL -1 -2 Gain - (Exclude PCB, Connector Losses) -9 -60 -40 - Temperature ( 1.5GHz @Low Gain P-1dB(IN) vs. Temperature (f=1495MHz, V =2.7V, V 1=1.8V CTL 20 18 ...

Page 69

... ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) 1.5GHz @Low Gain I vs. Temperature DD (V =2.7V, V 1=1.8V, V 2=1.8V CTL CTL -60 -40 - Temperature ( 3=0V, RF=OFF) CTL 60 80 100 o C) NJG1133MD7 - 69 - ...

Page 70

... NJG1133MD7 ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) Condition:Ta=+25℃ 2.7V, V 1=1.8V, V 2=1.8V CTL CTL 3=0V CTL ...

Page 71

... ELECTRICAL CHARACTERISTICS (1.5GHz band Low Gain mode) Condition:Ta=+25℃, V 1.5GHz @Low Gain k factor vs. frequency (f=50MHz~20GHz frequency (GHz) = =2.7V, V 1=1.8V CTL INV 15 20 NJG1133MD7 2=1.85V, V 3=0V CTL CTL - 71 - ...

Page 72

... NJG1133MD7 APPLICATION CIRCUIT 1(2.1GHz/800MHz/1.7GHz Band) IN3 (1.7GHz) 1.1nH L7 3.3nH GND IN2 RFIN2 (2.1GHz) 1.6nH 2.4nH RF IN1 L2 RFIN1 (800MHz) 8.2nH 13 L1 12nH VCTL3 CTL (RX ATT) 1 GND PARTS LIST Parts ID L1, L2, L4 ~L9 MURATA(LQP03T)0603 Size L3 TDK( ...

Page 73

... Band) Bias Circuit 2.1GHz Band Bias Circuit Logic Circuit 800MHz Band Bias Circuit 2 3 VCTL2 VCTL1 CTL CTL (Band Sel2) (Band Sel1) Notes NJG1133MD7 GND 8 C4 RFOUT3 1.5pF 7 L9 5.1nH RFOUT2 6 L6 2.4nH 5 RFOUT1 L3 10nH 4 GND 1 RF OUT3 (1.5GHz) C5 ...

Page 74

... NJG1133MD7 TEST PCB LAYOUT RF IN3 (1.7G/1.5GHz IN2 L5 L4 (2.1GHz IN1 (800MHz (Top View CTL CTL PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z PCB SIZE=35.4mm x 17.0mm RF OUT3 (1.7/1.5GHz CTL RF OUT1 (800MHz) ...

Page 75

... Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. NJG1133MD7 Details of"A" part Units : mm ...

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