njg1119pb4 New Japan Radio Co.,Ltd, njg1119pb4 Datasheet
njg1119pb4
Related parts for njg1119pb4
njg1119pb4 Summary of contents
Page 1
... W-CDMA Dual LNA GaAs MMIC GENERAL DESCRIPTION The NJG1119PB4 is a Dual band LNA IC designed for W-CDMA cellular phone of 2.1GHz and 800MHz band. This IC has a LNA pass-through function to select high gain mode or low gain mode. An ultra small and ultra thin package of FFP12–B4 is adopted. ...
Page 2
... NJG1119PB4 ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Inverter supply voltage Control voltage1 (High) Control voltage1 (Low) Control voltage 2 (High) Control voltage 2 (Low) ...
Page 3
... RF Output VSWR2 VSWR =0V, V =2.7V V, fRF=2140MHz, T CTL1 CTL2 CONDITIONS -1dB(1) f1=fRF, f2=fRF+100kHz, Pin=-36dBm =2.7V =0V, fRF=2140MHz, T INV CTL1 CTL2 CONDITIONS -1dB(2) F1=fRF, f2=fRF+100kHz, Pin=-36dBm NJG1119PB4 =+25° =50Ω, TEST CIRCUIT MIN TYP MAX UNITS 13.0 14.5 16 1.7 2.0 dB -16.0 -14.0 - dBm -6.0 -3.5 - dBm - 1 ...
Page 4
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 4 (800MHz band High Gain mode PARAMETERS SYMBOL Small signal gain1 Noise figure1 Pin at 1dB gain compression point1 Input 3rd order intercept point RF Input VSWR1 VSWR RF Output VSWR1 VSWR ELECTRICAL CHARACTERISTICS 5 (800MHz band Low Gain mode INV ...
Page 5
... The DC blocking capacitor is not required. 11 GND Ground terminal. (0V) RF input terminal of 800MHz band. The RF signal is input through external matching 12 RFIN1 circuit connected to this terminal. The DC blocking capacitor is not required. CAUTION 1) Ground terminal (No. 11) should be connected to the ground plane as low inductance as possible. NJG1119PB4 DESCRIPTION - 5 - ...
Page 6
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 1 (2.1GHz band High Gain Mode) Pout vs. Pin (f=2140M Hz =2.7V INV Pout -5 -10 -15 -20 -25 -30 -40 -30 -20 Pin (dBm ) NF vs. frequency (V =V =2.7V CTL 4 3 1 2.05 2.1 2.15 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, P in=-36dBm , INV ...
Page 7
... NF 2 1.5 1 0.5 50 100 o C) 1=0V, V 2=2.7V) CTL CTL 3.5 2.5 1.5 0.5 50 100 o C) 2=2.7V, PRF=OFF) 50 100 o C) NJG1119PB4 O IP3, IIP3 vs. Temperature =V =2.7V, V 1=0V INV CTL OIP3 9 8 IIP3 - Tem perature ( C) VSW R vs. Tem perature (f=2140M Hz =2.7V, V 1=0V, V 2=2.7V) DD INV CTL CTL 4 VSW Ri ...
Page 8
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 3(2.1GHz band High Gain Mode ...
Page 9
... ELECTRICAL CHARACTERISTICS 4(2.1GHz band High Gain Mode) k factor vs. frequency (V =V =2.7V, V 1=0V CTL frequency (GHz) 2=2.7V) CTL 15 20 NJG1119PB4 - 9 - ...
Page 10
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 5(2.1GHz band Low Gain Mode) Pout vs. Pin (f=2140M Hz =2.7V INV 10 0 -10 Pout -20 -30 P-1dB(IN)=+11.0dBm -40 -50 -40 -30 -20 -10 Pin (dBm ) NF vs. frequency (V =V =2.7V INV CTL 2.05 2.1 2.15 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-20dBm , V ...
Page 11
... C) 1=0V, V 2=0V) CTL CTL 3.5 2.5 1.5 0.5 50 100 o C) 2=0V, PRF=OFF) CTL IDD 50 100 o C) NJG1119PB4 O IP3, IIP3 vs. Temperature =V =2.7V INV CTL 5 OIP3 0 -5 IIP3 - Tem perature ( C) VSW R vs. Temperature (f=2140M Hz =2.7V, V 1=0V, V 2=0V) DD INV CTL CTL 4 VSW Ri VSW Ro ...
Page 12
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 7(2.1GHz band Low Gain Mode ...
Page 13
... ELECTRICAL CHARACTERISTICS 8(2.1GHz band Low Gain Mode) k factor vs. frequency (V =V =2.7V INV CTL frequency (GHz) 1=0V, V 2=0V) CTL 15 20 NJG1119PB4 - 13 - ...
Page 14
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 9(800MHz band High Gain Mode) Pout vs. Pin (f=885M Hz =2.7V INV Pout -5 -10 -15 -20 -25 -40 -30 -20 Pin (dBm ) NF vs. frequency (V =V =2.7V CTL 4 3 1.5 1 0.5 0 0.75 0.8 0.85 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-36dBm , INV ...
Page 15
... NF 2 1.5 1 0.5 50 100 o C) 1=2.7V, V 2=2.7V) CTL CTL 50 100 o C) 2=2.7V, PRF=OFF) CTL 50 100 o C) NJG1119PB4 O IP3, IIP3 vs. Temperature =V =2.7V, V 1=2.7V INV CTL OIP3 IIP3 - Tem perature ( C) VSW R vs. Temperature (f=885M Hz =2.7V, V 1=2.7V INV CTL CTL 4 3.5 ...
Page 16
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 11(800MHz band High Gain Mode ...
Page 17
... ELECTRICAL CHARACTERISTICS 12(800MHz band High Gain Mode) k factor vs. frequency (V =V =2.7V, V 1=2.7V CTL frequency (GHz) 2=2.7V) CTL 15 20 NJG1119PB4 - 17 - ...
Page 18
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 13(800MHz band Low Gain Mode) Pout vs. Pin (f=885M Hz =2.7V INV 10 0 -10 Pout -20 -30 -40 P-1dB(IN)=+9.5dBm -50 -40 -30 -20 -10 Pin (dBm ) NF vs. frequency (V =V =2.7V, V 1=2.7V CTL 0.75 0.8 0.85 frequency (GHz) OIP3, IIP3 vs. frequency (df=100kHz, Pin=-20dBm , V ...
Page 19
... C) 1=2.7V, V 2=0V) CTL CTL 3.5 2.5 1.5 0.5 50 100 o C) 2=0V, PRF=OFF) CTL IDD 50 100 o C) NJG1119PB4 O IP3, IIP3 vs. Temperature =V =2.7V, V 1=2.7V INV OIP3 0 -5 IIP3 - Tem perature ( C) VSW R vs. Temperature (f=885M Hz =2.7V, V 1=2.7V INV CTL C TL ...
Page 20
... NJG1119PB4 ELECTRICAL CHARACTERISTICS 15(800MHz band Low Gain Mode ...
Page 21
... ELECTRICAL CHARACTERISTICS 16(800MHz band Low Gain Mode) k factor vs. frequency (V =V =2.7V CTL frequency (GHz) 1=2.7V, V 2=0V) CTL 15 20 NJG1119PB4 - 21 - ...
Page 22
... NJG1119PB4 TEST CIRCUIT V RF IN2 L6 4.3nH (2.1GHz) RFIN2 10 L5 2.7nH GND 11 RF IN1 L2 (800MHz) 18nH RFIN1 12 L1 10nH 1 Pin INDEX PARTS LIST Parts ID Comment L1, L3~L5, L7 TAIYO-YUDEN (HK1005) L2, L6, L8 MURATA (LQW15A) C1~C4 MURATA (GRP15) *: Please use an appropriate inductor for L2, L6 improve Noise Figure. ...
Page 23
... RECOMMENDED DESIGN RF IN1 (800MHz) V (Top View) RF IN2 (2.1GHz) V INV CTL RF OUT1 (800MHz) PCB (FR-4): t=0.2m MICROSTRIP LINE WIDTH=0.4mm (Z PCB SIZE=17.0mmx17.0mm NJG1119PB4 V 1 CTL RF OUT2 (2.1GHz =50 Ω ...
Page 24
... NJG1119PB4 PACKAGE OUTLINE (FFP12-B4) 1pin (BOTTOM VIEW) 0.365 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. ...