sp000223256 Infineon Technologies Corporation, sp000223256 Datasheet - Page 3

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sp000223256

Manufacturer Part Number
sp000223256
Description
N-channel Mosfets >500v?900v Power Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
Rev. 2.0
1)
2)
3)
4)
5)
is vertical without blown air
6)
7)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
C
C
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
6)
7)
D
is a fixed capacitance that gives the same stored energy as C
, di/dt<=200A/µs, V
p
limited by T
DClink
j,max
=400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
d(on)
r
d(off)
f
rr
rrm
<V
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
V
f =1 MHz
V
to 480 V
V
V
R
V
V
V
T
V
di
, T
page 3
j
GS
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
j
<T
=400 V, I
/dt =100 A/µs
=3.3 Ω
=0 V, V
=0 V, V
=400 V,
=10 V, I
=400 V, I
=0 to 10 V
=0 V, I
jmax
, identical low side and high side switch.
F
DS
DS
=9.9 A,
D
F
oss
=9.9 A,
=I
D
oss
=100 V,
=0 V
=9.9 A,
S
while V
while V
,
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
1520
typ.
180
340
5.0
0.9
5.5
72
69
10
50
11
32
33
5
5
8
IPB60R199CP
max.
1.2
43
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A
2006-06-19

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