ntmd4184 ON Semiconductor, ntmd4184 Datasheet - Page 3

• Manufacturer Part Number: ntmd4184
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
0.30
0.25
0.20
0.15
0.10
0.05
10
8
6
4
2
0
0
2
Figure 3. On-Resistance vs. Gate Voltage
Figure 1. On-Region Characteristics
Characteristic
V
V
5.0 V
DS
Parameter
GS
2
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-TO-SOURCE VOLTAGE (V)
10 V
4
4
V
GS
= 4.5 V
6
6
(T
J
= 25°C unless otherwise noted)
T
J
TYPICAL CHARACTERISTICS
= 25°C
ID = 3 A
T
Symbol
Symbol
J
8
= 25°C
V
I
R
8
F
2.6 V
http://onsemi.com
3.8 V
3.6 V
3.4 V
3.2 V
NTMD4184PF
4.2 V
4.0 V
2.8 V
3.0 V
10
10
(T
V
V
I
I
F
F
R
R
J
3
= 1.0 A
= 2.0 A
= 10 V
= 20 V
= 25°C unless otherwise noted)
Test Conditions
Test Condition
0.25
0.20
0.15
0.10
0.05
10
8
6
4
2
0
0
2
Figure 4. On-Resistance vs. Drain Current and
T
V
T
T
T
T
J
T
T
T
T
DS
J
J
J
J
J
J
J
J
= 25°C
= 125°C
= 125°C
= 125°C
= 125°C
3
= 25°C
= 25°C
= 25°C
= 25°C
V
≥ 10 V
Figure 2. Transfer Characteristics
1
GS
, GATE-TO-SOURCE VOLTAGE (V)
4
I
T
D
J
, DRAIN CURRENT (A)
2
= 125°C
Gate Voltage
Min
Min
V
V
GS
GS
5
= 4.5 V
= 10 V
3
0.001
0.004
T
0.43
0.35
0.45
Typ
Typ
0.5
1.2
2.0
J
6
= -55°C
4
T
J
7
= 25°C
Max
Max
0.50
0.39
0.58
0.53
0.02
0.05
14
18
5
8
Unit
Unit
mA
V
6
9