tsdf02830yr Vishay, tsdf02830yr Datasheet - Page 3

• Manufacturer Part Number: tsdf02830yr
• Description: Dual - Mosmic Two Agc Amplifiers For Tv-tuner Prestage With 5 V Supply Voltage
• Manufacturer: Vishay

VISHAY
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications
Electrical AC Characteristics
T
Amplifier 1
V
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Document Number 85164
Rev. 1, 25-Oct-02
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain - source operating current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Drain - source breakdown voltage
Gate 1 - source breakdown voltage + I
Gate 2 - source breakdown voltage ± I
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain - source operating current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
amb
DS
= V
= 25 °C, unless otherwise specified
RG1
= 5 V, V
Parameter
Parameter
Parameter
G2S
= 4 V, R
G1
= 100 kΩ, I
+ V
± V
V
= 56 kΩ
V
V
= 20 µA
I
+ V
± V
V
= 56 kΩ
V
V
= 20 µA
G
mS, B
G
B
G
mS, B
V
MHz
G
50 MHz
G
f = 400 MHz
G
B
D
DS
DS
DS
DS
DS
DS
L
DS
Sopt
S
S
S
S
S
S
= 10 µA, V
G2S
G1S
= B
G1S
G2S
G1S
G2S
= 2 mS, B
= 2 mS, G
= 2 mS, B
= 3.3 mS, B
= G
= 3.3 mS, G
= 5 V, V
= V
= 5 V, V
= V
= V
= 5 V, V
= V
, f = 800 MHz
L
L
Lopt
= 10 mA, V
= 10 mA, V
L
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= B
= B
RG1
RG1
RG1
RG1
= 20 mS, B
, f = 400 MHz
Test condition
Test condition
D
Test condition
Lopt
Lopt
G2S
= 5 V, V
= 5 V, R
= 5 V, V
= 5 V, R
= I
G2S
G2S
S
G1S
L
S
DSO,
, f = 200 MHz
= B
, f = 800 MHz
= 1 mS, B
G2S
G1S
G2S
G1S
= B
S
= 0.5 to 4 V, f = 200
L
= 4, I
= 4, I
= V
= B
= 1 mS, B
G2S
G1S
Sopt
Sopt
= V
= V
G2S
G1
= V
= V
G2S
f = 1 MHz, T
S
G1
G2S
Sopt
= B
D
D
, G
= V
= V
=100 kΩ, I
, G
DS
DS
= 56 kΩ, I
DS
DS
= 4 V, R
= 20 µA
= 4 V, R
= 20 µA
, G
S
L
= 0
L
L
DS
DS
= 0
= 0
= 1 mS,
= B
= 0
= 0
= 0, f =
= 0.5
S
L
= 0
= 0
= 1
=
Sopt
G1
G1
amb
D
D
,
+ V
± V
= 25 °C, unless otherwise specified
V
V
V
V
V
Symbol
Symbol
Symbol
+ I
± I
+ I
± I
G1S(OFF)
G2S(OFF)
G1S(OFF)
G2S(OFF)
(BR)DSS
C
(BR)G1SS
(BR)G2SS
|y
I
I
C
C
G
G
G
G
DSO
DSO
issg1
G1SS
G2SS
G1SS
G2SS
21s
F
F
F
oss
rss
ps
ps
ps
ps
|
Min
Min
Min
0.3
0.3
0.3
0.3
12
27
8
7
7
8
TSDF02830YR
Vishay Semiconductors
Typ.
Typ.
Typ.
1.9
0.9
6.0
1.0
1.3
12
12
31
20
33
30
25
50
Max
Max
Max
1.0
1.2
1.0
1.2
2.3
8.0
1.5
2.0
20
20
17
10
10
20
20
17
35
www.vishay.com
Unit
Unit
Unit
mA
mA
mS
nA
nA
nA
nA
pF
pF
dB
dB
dB
dB
dB
dB
dB
fF
V
V
V
V
V
V
V
3