maapss0107 Tyco Electronics, maapss0107 Datasheet

maapss0107

Manufacturer Part Number

maapss0107

Description

3.6 V, 0.5 W, Rf Power Amplifier Ic For Dect 1800 - 2000 Mhz

Manufacturer

Tyco Electronics

Datasheet

1.MAAPSS0107.pdf (6 pages)

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M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

3.6 V, 0.5 W, RF Power Amplifier IC for DECT

1800 - 2000 MHz

Features

• Single Positive Supply

• 57% Power Added Efficiency

• Operation down to 1.2 V

• 100% Duty Cycle

• 1800 - 2000 MHz Operation

• Self-Aligned MSAG ® - Lite MESFET Process

• Lead-Free 8 Pin Full Downset MSOP Package

• 100% Matte Tin Plating over Copper

• Halogen-Free “Green” Mold Compound

• 260°C Reflow Compatible

• RoHS* Compliant Version of MA02206GJ

Description

M/A-COM’s MAAPSS0107 is a DECT power

amplifier based on M/A-COM’s Self Aligned MSAG

MESFET Process. This product is designed for use

in 3.6 V DECT handsets and base stations.

Ordering Information

Note: Reference Application Note M513 for reel size

information.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

MAAPSS0107TR-3000

MAAPSS0107SMB

Part Number

MAAPSS0107

Sample Test Board

Bulk Packaging

3000 piece reel

Package

Compliant

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

Functional Schematic

2. Exceeding any one or combination of these limits may cause

3. M/A-COM does not recommend sustained operation near

PIN Configuration

1. The exposed pad centered on the package bottom must be

Absolute Maximum Ratings

Operating Temperature Range

Storage Temperature Range

permanent damage to this device.

these survivability limits.

connected to electrical (RF and DC) and thermal ground.

RoHS

Junction Temperature

Moisture Sensitivity

Pin 1

DC Supply Voltage

RF Input Power

Parameter

Function

OUT

GND

/ V

Drain voltage, first stage

Absolute Maximum

voltage for third stage

voltage for first stage

RF output and drain

Gate bias voltage,

RF input and gate

Drain voltage for

Description

-40°C to +150°C

-40°C to +100°C

second stage

JEDEC Level 1

third stage

MAAPSS0107

Ground

2,3

10 mW

150°C

5.5 V

Pin 8

Related parts for maapss0107

maapss0107 Summary of contents

Page 1

... Halogen-Free “Green” Mold Compound • 260°C Reflow Compatible • RoHS* Compliant Version of MA02206GJ Description M/A-COM’s MAAPSS0107 is a DECT power amplifier based on M/A-COM’s Self Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations. ...

Page 2

... 5.0 V, Load VSWR = 5:1, DD all phases • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPSS0107 37° Units Min. Typ. Max. ...

Page 3

... T4 = 0.400” 75 Ω 0.195” 50 Ω 0.280” 50 Ω T7 0.090” 75 Ω • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPSS0107 V1 ...

Page 4

... North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MAAPSS0107 = 3 dBm Pout 4 PAE ...

Page 5

... Temperature Ts (°C) Designing with the MAAPSS0107 The MAAPSS0107 is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0 VDC gate bias. There is no impedance matching or RF choking on this IC – these functions are supplied externally. This approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete design ...

Page 6

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