lrs1830 Sharp Microelectronics of the Americas, lrs1830 Datasheet - Page 28

• Manufacturer Part Number: lrs1830
• Description: Stacked Chip 256m X16 Boot Block Flash And 32m X16 Scram
• Manufacturer: Sharp Microelectronics of the Americas

6.6.3 Write Cycle (WE / F-CE Controlled)
Notes:
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BVWH
WHEH
WHBX
t
t
DVWH
WHDX
WHAX
WHWL
VVWH
WLWH
AVWH
WHGL
ELWL
WHBH
WHRL
1. The timing characteristics for reading the status register during block erase, bank erase, (page buffer) program operations
2. A write operation can be initiated and terminated with either F-CE or WE.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. WP/A
7. t
8. See 6.2.1 Command Definitions for valid address and data for block erase, bank erase, (page buffer) program or lock bit
PHWL
WHR0
BLWL
Symbol
t
t
are the same as during read-only operations. See the AC Characteristics for read cycle.
occurs last) to the rising or falling edge of BS or the rising edge of F-CE or WE (whichever occurs first). Hence,
t
edge of F-CE or WE (whichever goes low last). Hence, t
success (SR.1/3/4/5=0).
configuration.
sharp
QVVL
AVAV
WP
WHR0
, t
(t
(t
, t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
=t
BVEH
EHWH
EHBX
WLBL
PHEL
DVEH
AVEH
WHBL
EHDX
EHAX
VVEH
EHGL
EHR0
EHRL
ELEH
EHEL
WLWH
CC
(t
EHR0
)
)
) F-CE (WE) Setup to WE (F-CE) Going Low
) WE (F-CE) Pulse Width
) Address Setup to WE (F-CE) Going High
) BS Setup to WE (F-CE) Going High
) BS Hold from WE (F-CE) Going High
) WE (F-CE) High to F-RY/BY Going Low
) WE (F-CE) Pulse Width High
) Write Recovery before Read
) Data Setup to WE (F-CE) Going High
) Data Hold from WE (F-CE) High
) Address Hold from WE (F-CE) High
) WP/A
) F-CE (WE) Hold from WE (F-CE) High
should be held at WP/A
=t
Write Cycle Time
F-RST High Recovery to WE (F-CE) Going Low
BS Setup to WE Going Low
BS Hold from WE High
WP/A
WE (F-CE) High to SR.7 Going “0”
) after the Read Query or Read Identifier Codes command=t
ELEH
CC
CC
=t
WP
WLEH
Setup to WE (F-CE) Going High
Hold from Valid SRD, F-RY/BY High-Z
) is defined from the falling or rising edge of BS or the falling edge of F-CE or WE (whichever
WPH
=t
ELWH
) is defined from the rising edge of F-CE or WE (whichever goes high first) to the falling
=t
CC
BLBH
(1, 2)
=V
ACCH1/2
Parameter
=t
WLBH
until determination of block erase, bank erase, (page buffer) program
=t
L R S1 8 3 0
BLWH
WPH
.
=t
WHWL
=t
EHEL
AVQV
=t
(T
WHEL
+100ns.
A
= -30°C to +85°C, V
Notes
3, 6
3, 7
=t
3
4
4
8
8
5
3
3
EHWL
.
Min.
150
200
70
50
40
50
50
20
30
0
0
0
0
0
0
0
0
t
AVQV
CC
Max.
100
= 2.7V to 3.1V)
+50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25