k4t1g084qq Samsung Semiconductor, Inc., k4t1g084qq Datasheet - Page 31

• Manufacturer Part Number: k4t1g084qq
• Description: 1gb Q-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QQ
K4T1G164QQ
K4T1G044QQ
DQS
Note1
Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min.
V
V
V
V
V
V
Hold Slew Rate
IL(dc)
IL(ac)
REF(dc)
DDQ
IH(ac)
IH(dc)
Rising Signal
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
max
max
V
V
V
V
V
V
V
min
min
V
DDQ
IH(ac)
IH(dc)
REF(dc)
IL(dc)
IL(ac)
SS
SS
max
max
min
min
dc to V
dc to V
region
region
=
V
REF(dc)
REF
REF
∆TR
- Vil(dc)max
slew rate
nominal
tDS
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tDH
∆TR
Hold Slew Rate
Falling Signal
tDS
nominal
slew rate
=
Vih(dc)min - V
tDH
∆TF
∆TF
Rev. 1.03 February 2008
REF(dc)
DDR2 SDRAM