k4t1g084qd-zcf7 Samsung Semiconductor, Inc., k4t1g084qd-zcf7 Datasheet - Page 18

• Manufacturer Part Number: k4t1g084qd-zcf7
• Description: Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QD
K4T1G164QD
12.0 Input/Output capacitance
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
< 95 °C; V
Parameter
3.75
12.5
12.5
57.5
DDR2-800(E7)
min
2.5
45
5
-
DDQ
5-5-5
= 1.8V + 0.1V; V
70000
max
8
8
8
-
-
-
-
tRFC
tREFI
3.75
DDR2-800(F7)
min
2.5
15
15
60
45
3
-
DD
0 °C ≤ T
85 °C < T
6-6-6
= 1.8V + 0.1V)
Symbol
70000
max
Symbol
CDCK
CDIO
8
8
8
CCK
-
-
-
-
CASE
CDI
CIO
CI
16 of 29
CASE
≤ 85°C
≤ 95°C
DDR2-667(E6)
3.75
min
15
15
60
45
5
3
-
5 - 5 - 5
Min
1.0
1.0
2.5
x
x
x
DDR2-400
DDR2-533
70000
max
256Mb
8
8
8
-
-
-
-
7.8
3.9
75
Max
0.25
0.25
2.0
2.0
4.0
0.5
DDR2-533(D5)
3.75
3.75
min
15
15
60
45
512Mb
5
-
105
7.8
3.9
4 - 4 - 4
Min
1.0
1.0
2.5
x
x
x
DDR2-667
70000
max
8
8
8
-
-
-
-
127.5
1Gb
Max
0.25
0.25
7.8
3.9
2.0
2.0
3.5
0.5
DDR2-400(CC)
Rev. 1.0 March 2007
min
15
15
55
40
5
5
-
-
DDR2 SDRAM
2Gb
195
3 - 3 - 3
Min
7.8
3.9
1.0
1.0
2.5
x
x
x
DDR2-800
70000
max
8
8
-
-
-
-
-
327.5
4Gb
Max
0.25
1.75
0.25
7.8
3.9
2.0
3.5
0.5
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
pF
pF
pF
pF
pF
pF
µs
µs
ns