k4d261638e Samsung Semiconductor, Inc., k4d261638e Datasheet - Page 11
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k4d261638e
Manufacturer Part Number
k4d261638e
Description
2m X 16bit X 4 Banks Double Data Rate Synchronous Dram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4D261638E.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4d261638e-TC50
Manufacturer:
SAMSUNG
Quantity:
9 600
AC INPUT OPERATING CONDITIONS
Recommended operating conditions Unless Otherwise Noted, T
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
K4D261638E
Note : 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
3. For the K4D261638E-TC2A, VDD & VDDQ = 2.8V+0.1V.
2. Refresh period is 32ms.
Parameter
ID
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
I
Symbol
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
P
N
P
N
Burst Lenth=2
I
CKE d V
CKE t V
t
CKE d V
CKE t VIH(min), CS t VIH(min),
t
t
Page Burst, All Banks activated.
t
CKE d 0.2V
OL
CC
CC
RC
RC
=0mA,
=
=
t
t
t
t
t
t
CC
CC
RFC
RFC
(min)
Test Condition
(min)
IL
IH
IL
(min)
(min)
(max),
(max),
t
(min), CS t V
CC
DDQ
Symbol
=
t
t
t
RC
of the transmitting device and must track variations in the DC level of the same
RC
V
V
CC
V
V
t
t
IH
ID
CC
IL
IX
CC
(min)
t
t
SS
=
=
t
t
RFC
RC
=0V, V
t
t
CC
CC
- 11 -
IH
(min)
(min)
(min)
(min)
(min),
0.5*V
DD
V
A
REF
=0 to 65
=2.5V+ 5%, V
Min
0.7
DDQ
+0.35
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-2A
-0.2
q
C)
DDQ
210
100
150
380
320
-33
80
Typ
=2.5V+ 5%,T
-
-
-
-
Version
200
140
360
310
-36
90
75
0.5*V
128M DDR SDRAM
V
V
70
4
REF
A
DDQ
Max
=0 to 65qC)
DDQ
-
190
130
340
290
-0.35
-40
80
70
+0.6
Rev. 1.2 (Jul. 2003)
+0.2
170
120
320
270
-50
65
70
Unit
V
V
V
V
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
2
1
2