k4h510438b-tuc/lb3 Samsung Semiconductor, Inc., k4h510438b-tuc/lb3 Datasheet - Page 17

• Manufacturer Part Number: k4h510438b-tuc/lb3
• Description: 512mb C-die Ddr Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system
performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
20.0 System Characteristics for DDR SDRAM
DDR SDRAM 512Mb B-die (x4, x8, x16)
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
PARAMETER
Output Slew Rate Matching Ratio (Pullup to Pulldown)
Slew Rate Characteristic
Slew Rate Characteristic
Input Slew Rate
Input Slew Rate
Delta Slew Rate
+/- 0.25 V/ns
+/- 0.0 V/ns
+/- 0.5 V/ns
Pullup Slew Rate
Pullup Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
Pulldown slew
Pulldown slew
AC CHARACTERISTICS
AC CHARACTERISTICS
+100
∆tDS
+150
∆tDS
+100
∆tIS
+50
+75
+50
0
0
0
Typical Range
Typical Range
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
(V/ns)
(V/ns)
∆tDH
∆tDH
+150
+100
∆tIH
+75
+50
0
0
0
0
0
Minimum
Minimum
(V/ns)
(V/ns)
1.0
1.0
0.7
0.7
SYMBOL
DCSLEW
TBD
MIN
DDR266B
Units
Units
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
Maximum
Maximum
MAX
TBD
TBD
MIN
(V/ns)
(V/ns)
4.5
4.5
5.0
5.0
DDR333
Notes
Notes
Notes
0.67
MIN
MAX
TBD
k
k
k
i
i
i
j
j
j
DDR200
a,c,d,f,g,h
b,c,d,f,g,h
a,c,d,f,g,h
b,c,d,f,g,h
Notes
Notes
MAX
TBD
1.5
MIN
DDR266
MAX
TBD
Notes
e,m
MIN
0.5
Rev. 1.3 June. 2005
DDR200
MAX
4.0
DDR SDRAM
Units
V/ns
Notes
a, m