k4h510438 Samsung Semiconductor, Inc., k4h510438 Datasheet - Page 16

• Manufacturer Part Number: k4h510438
• Description: Ddr Sdram 512mb B-die X4, X8, X16
• Manufacturer: Samsung Semiconductor, Inc.

System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
DDR SDRAM 512Mb B-die (x4, x8, x16)
PARAMETER
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Input Slew Rate
Input Slew Rate
0.5 V/ns
0.4 V/ns
0.3 V/ns
0.5 V/ns
0.4 V/ns
0.3 V/ns
AC CHARACTERISTICS
Parameter
+100
+150
+50
tDS
+75
tIS
0
0
+150
tDH
+75
tIH
0
0
0
0
Symbol
tWPST
tPDEX
tXSNR
tXSRD
tDIPW
tMRD
tREFI
tQHS
tRAP
tIPW
tDAL
tDS
tDH
tQH
tHP
DCSLEW
SYMBOL
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR333@CL=2.5))
tCLmin
Units
Units
-tQHS
1.75
Min
0.45
0.45
ps
ps
ps
ps
ps
ps
200
tHP
2.2
0.4
12
75
18
6
+
TBD
MIN
B3
DDR333
Max
0.55
0.6
7.8
-
-
Notes
Notes
MAX
TBD
k
k
k
i
i
i
(tWR/tCK)
or tCHmin
(tRP/tCK)
tCLmin
(DDR266@CL=2.0)
-tQHS
Min
1.75
200
tHP
0.5
0.5
2.2
7.5
0.4
15
75
20
+
TBD
MIN
DDR266
A2
Max
0.75
MAX
TBD
7.8
0.6
-
-
Rev. 1.2 October, 2004
or tCHmin
(tWR/tCK)
(tRP/tCK)
MIN
(DDR266@CL=2.5))
tCLmin
-tQHS
0.5
Min
1.75
200
tHP
7.5
0.5
0.5
2.2
0.4
15
75
20
+
DDR200
B0
MAX
4.0
DDR SDRAM
Max
0.75
7.8
0.6
-
-
Units
V/ns
Unit
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
ns
Notes
a, m
10, 11
Note
j, k
j, k
13
11
11
8
8
4
2