k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet - Page 9

• Manufacturer Part Number: k4s560832j
• Description: 256mb J-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S560432J
K4S560832J
K4S561632J
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
11.0 DC Characteristics (x4, x8)
Notes :
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32J-UC
4. K4S5604(08)32J-UL
5. Unless otherwise noticed, input swing level is CMOS(V
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK ≤ V
PS CKE & CLK ≤ V
N
N
P
P
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
4banks Activated.
t
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
CCD
RC
RC
O
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
(Recommended operating condition unless otherwise noted, T
= 10ns
= 10ns
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
= ∞
= ∞
/V
C
L
SSQ
).
Synchronous DRAM
Version
Rev. 1.21 March 2008
160
110
1.5
75
70
15
10
28
20
2
2
5
5
3
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
= 0 to 70°C)
Note
1
1
2
3
4