k4s56163pf Samsung Semiconductor, Inc., k4s56163pf Datasheet - Page 10

• Manufacturer Part Number: k4s56163pf
• Description: 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
• Manufacturer: Samsung Semiconductor, Inc.

K4S56163PF - R(B)G/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
BA1
0
0
1
1
0
1
A12~A10/AP
Address
0
0
1
1
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
0
1
0
1
Mode Register Set
BA1
Single Bit
Mode Select
Length
"0" Setting for
Burst
Normal MRS
Reserved
Reserved
Reserved
BA0 ~ BA1
Mode Select
Type
EMRS for Mobile SDRAM
A9
BA0
0
Normal MRS
Reserved
Reserved
Mode
A12 ~ A10/AP
Reserved Address
A6
0
0
0
0
1
1
1
1
A8
A12 ~ A10/AP
0
A5
RFU
0
0
1
1
0
0
1
1
CAS Latency
A4
0
1
0
1
0
1
0
1
RFU
A7
0
A9
A6
0
0
1
1
*1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
1
2
3
*2
A5
Driver Strength
A8
0
1
0
1
A4
0
A8
Test Mode
Driver Strength
BA1 BA0
Full Page Length x16 : 64Mb(256), 128Mb(512),256Mb(512),512Mb(1024)
A3
0
1
0
A7
10
Mode Select
Burst Type
Full
1/2
1/4
1/8
A7
0
Sequential
Interleave
A3
A6
0
Type
mal MRS
for Nor-
Setting
A6
DS
Mode
CAS Latency
A5
A2
0
0
0
0
1
1
1
1
A5
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
A4
RFU
A4
A1
A0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
*1
A3
Mobile-SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
Size of Refreshed Array
PASR
Reserved
Reserved
Reserved
Full Page
1/2 of Full Array
1/4 of Full Array
A2
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
September 2004
Burst Length
PASR
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0