k4s511632c-l7c Samsung Semiconductor, Inc., k4s511632c-l7c Datasheet

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k4s511632c-l7c

Manufacturer Part Number
k4s511632c-l7c
Description
8m X 16bit X 4 Banks Synchronous Dram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K4S511632C
CMOS SDRAM
DDP 512Mbit SDRAM
8M x 16bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
Sept. 2001
Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die
Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations
or desk top computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die
Plastic DRAM in other products or other applications under paragrangh such as mobile, telecom or non-computer application(which include
by way of example laptop or notebook computers, cell phones, televisions or visual monitors)
Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung."
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Sept. 2001

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k4s511632c-l7c Summary of contents

Page 1

... K4S511632C DDP 512Mbit SDRAM Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top computers for the first three years of five year term of this license ...

Page 2

... K4S511632C Revision 0.0 (Mar., 2001) Revision 0.1 (Sep., 2001) • Redefined IDD1 & IDD4 in DC Characteristics CMOS SDRAM Rev. 0.1 Sept. 2001 ...

Page 3

... CKE * Samsung Electronics reserves the right to change products or specification without notice. GENERAL DESCRIPTION The K4S511632C is 536,870,912 bits synchronous high data rate Dynamic RAM organized 8,392,608words by 16bits, fabri- cated with SAMSUNG's high performance CMOS technology. Syn- chronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...

Page 4

... K4S511632C PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System cock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable L(U)DQM Data input/output mask DQ ~ Data input/output ...

Page 5

... K4S511632C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

Page 6

... I CC3 Operating current I (Burst mode) Refresh current I Self refresh current I Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S511632C-KC** 4. K4S511632C-KL** 5. Unless otherwise noticed, input swing level is CMOS Test Condition Burst length = (min) CC1 ...

Page 7

... K4S511632C AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...

Page 8

... K4S511632C AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...

Page 9

... K4S511632C IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz/ 100MHz/ Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz/ 100MHz/ Voltage 133MHz 133MHz Min Max (V) I (mA) I (mA) 0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1 ...

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... K4S511632C V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) Rev. 0.1 Sept. 2001 ...

Page 11

... K4S511632C SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst Stop ...

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