ic42s32800 ETC-unknow, ic42s32800 Datasheet
ic42s32800
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ic42s32800 Summary of contents
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... IC42S32800 IC42S32800L Document Title Bit x 4 Banks (256-MBIT) SDRAM Revision History Revision No History 0A Initial Draft 0B Revise Page22 typo The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. ...
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... ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. 2 DESCRIPTION The ICSI IC42S32800 and IC42S32800L is a high-speed CMOS configured as a quad DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). ...
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... IC42S32800 IC42S32800L FUNCTIONAL BLOCK DIAGRAM CLK COMMAND COLUMN ...
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... IC42S32800 IC42S32800L PIN DESCRIPTIONS Table 1.Pin Details of IC42S32800 and IC42S32800L Symbol Type Description CLK Input Clock:CLK is driven by the system clock.All SDRAM input signals are sampled on the positive edge of CLK.CLK also increments the internal burst counter and controls the output registers. CKE Input Clock Enable:CKE activates(HIGH)and deactivates(LOW)the CLK signal ...
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... IC42S32800 IC42S32800L PIN FUNCTION Connect:These pins should be left unconnected. VDDQ Supply DQ Power:Provide isolated power to DQs for improved noise immunity. VSSQ Supply DQ Ground:Provide isolated ground to DQs for improved noise immunity. VDD Supply Power Supply:+3.3V ± 0.3V VSS Supply Ground PIN CONFIGURATIONS 86-Pin TSOP 2 Integrated Circuit Solution Inc ...
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... IC42S32800 IC42S32800L Operation Mode Fully synchronous operations are performed to latch the commands at the positive edges of CLK.Table 2 shows the truth table for the operation commands. Table 2.Truth Table (Note (1),(2)) Command State BankActivate Idle (3) BankPrecharge Any PrechargeAll Any Write Active Write and Auto Precharge Active ...
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... IC42S32800 IC42S32800L Commands 1 BankActivate (RAS#=”L”,CAS#=”H”,WE#=”H”,BS =Bank,A0-A11 =Row Address) The BankActivate command activates the idle bank designated by the BS0,1 (Bank Select) signal.By latching the row address A11 at the time of this command,the selected row access is initiated.The read or write operation in the same bank can occur after a time delay of tRCD(min ...
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... IC42S32800 IC42S32800L 3 PrechargeAll command (RAS#=”L”,CAS#=”H”,WE#=”L”,BS =Don t care,A10 =”H”) The PrechargeAll command precharges all the four banks simultaneously and can be issued even if all banks are not in the active state.All banks are then switched to the idle state. ...
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... IC42S32800 IC42S32800L T0 T1 CLK COMMAND READ A NOP CAS# latency=2 t CK2 , DQ s CAS# latency=3 t CK3 , DQ s Burst Read Operation(Burst Length =4,CAS#Latency =2,3) The read data appears on the DQs subject to the values on the DQM inputs two clocks earlier (i.e.DQM latency is two clocks for output buffers).A read burst without the auto precharge function may be interrupted by a subsequent Read or Write command to the same bank or the other active bank before the end of the burst length ...
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... IC42S32800 IC42S32800L T0 T1 CLK COMMAND NOP READ A DQ’s : "H" or "L" Read to Write Interval (Burst Length = 4,CAS#Latency = CLK DQM COMMAND NOP NOP CAS# latency=2 tCK2, DQs : "H" or "L" Read to Write Interval (Burst Length = 4,CAS#Latency =2) T0 ...
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... IC42S32800 IC42S32800L T0 CLK Bank, ADDRESS Col A COMMAND READ A CAS# latency=2 t CK2 , DQ s CAS# latency=3 t CK3 , DQ s Read to Precharge (CAS#Latency =2,3) 5 Write command (RAS#=”H”,CAS#=”L”,WE#=”L”,BS =Bank,A10 =”L”,A0-A7 =Column Address) The Write command is used to write a burst of data on consecutive clock cycles from an active row in an active bank ...
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... IC42S32800 IC42S32800L T0 T1 CLK COMMAND NOP WRITEA DIN A 0 DQ’s Write Interrupted by a Write (Burst Length =4,CAS#Latency =2,3) The Read command that interrupts a write burst without auto precharge function should be issued one cycle after the clock edge in which the last data-in element is registered.In order to avoid data contention,input data must be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to the following figure) ...
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... IC42S32800 IC42S32800L 6 Concurrent Auto Precharge An access command (READ or WRITE) to another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. ICSI SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE occurs are defined below. ...
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... IC42S32800 IC42S32800L WRITE with Auto Precharge · Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m ...
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... IC42S32800 IC42S32800L 7 Mode Register Set command (RAS#=”L”,CAS#=”L”,WE#=”L”,BS0,1 and A11-A0 =Register Data) The mode register stores the data for controlling the various operating modes of SDRAM.The Mode Register Set command programs the values of CAS#latency,Addressing Mode and Burst Length in the Mode register to make SDRAM useful for a variety of different applications.The default values of the Mode Register after power-up are undefined ...
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... IC42S32800 IC42S32800L T0 T1 CLK t CK2 CKE CS# RAS# CAS# WE# ADDR. DQM Hi-Z DQ Precharge All The mode register is divided into various fields depending on functionality. Address BS0,1 A11/A10 Function RFU* *Note:RFU (Reserved for future use)should stay 0 during MRS cycle. Burst Length Field (A2~A0) ¡D ¡D ¡D ¡ ...
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... IC42S32800 IC42S32800L • Burst Type Field (A3) The Burst Type can be one of two modes,Interleave Mode or Sequential Mode. A3 Burst Type 0 Sequential 1 Interleave —Addressing Sequence of Sequential Mode An internal column address is performed by increasing the address from the column address which is input to the device.The internal column address is varied by the Burst Length as shown in the following table.When the value of column address,(n +m),in the table is larger than 255,only the least significant 8 bits are effective ...
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... IC42S32800 IC42S32800L • Test Mode field (A8~A7) These two bits are used to enter the test mode and must be programmed to “00”in normal operation • Write Burst Length (A9) This bit is used to select the burst write length. A9 Write Burst Length ...
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... IC42S32800 IC42S32800L 10 Device Deselect command (CS#=”H”) The Device Deselect command disables the command decoder so that the RAS#,CAS#,WE# and Address inputs are ignored,regardless of whether the CLK is enabled.This command is similar to the No Operation command. 11 AutoRefresh command (RAS#=”L”,CAS#=”L”,WE#=”H”,CKE =”H”) The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-before- RAS#(CBR)Refresh in conventional DRAMs ...
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... IC42S32800 IC42S32800L ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Supply Voltage (with respect Supply Voltage for Output (with respect to V DDQ V Input Voltage (with respect Output Voltage O I Short circuit output current O P Power Dissipation ( D T Operating Temperature OPT ...
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... IC42S32800 IC42S32800L Recommended D.C.Operating Conditions (VDD =3.3V ± 0.3V,Ta =0~70 C) Description/Test condition Operating Current t t (min), Outputs Open, Input RC RC signal one transition per one cycle Precharge Standby Current in power down mode t = 15ns, CKE V (max Precharge Standby Current in power down mode CKE V (max) ...
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... IC42S32800 IC42S32800L Electrical Characteristics and Recommended A.C.Operating Conditions (VDD =3.3V ± 0.3V,Ta =0~70 C)(Note:5,6,7,8) Symbol A.C. Parameter t Row cycle time RC (same bank) t Row activate to row activate delay RRD (different banks) t RAS# to CAS# delay RCD (same bank) t Precharge to refresh/row activate command RP (same bank) t Row activate to precharge time ...
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... IC42S32800 IC42S32800L 6.A.C.Test Conditions LVTTL Interface Reference Level of Output Signals Output Load Input Signal Levels Transition Time (Rise and Fall)of Input Signals Reference Level of Input Signals Z0= 50Ω Output LVTTL A.C. Test Load 7. Transition times are measured between VIH and VIL.Transition(rise and fall)of input signals are in a fixed slope (1 ns) ...
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... IC42S32800 IC42S32800L Timing Waveforms Figure 1.AC Parameters for Write Timing (Burst Length=4,CAS#Latency= CLK CKE CS# RAS# CAS# WE# BS0 ADDR. RBx DQM t RCD Hi-Z DQ Activate Command Bank T10 T11 CK2 Begin Auto Precharge ...
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... IC42S32800 IC42S32800L Figure 2.AC Parameters for Read Timing (Burst Length=2,CAS#Latency= CLK CKE t IS CS# RAS# CAS# WE# BS0,1 A10 RAx t IS A0-A9 RAx DQM Hi-Z DQ Activate Command Bank A Integrated Circuit Solution Inc. DR046-0B 12/21/2004 CK2 RBx ...
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... IC42S32800 IC42S32800L Figure 3.Auto Refresh (CBR)(Burst Length=4,CAS#Latency= CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 A10 A0- DQM DQ DQ Precharge All Auto Refresh Command Command T10 T11 T12 T13 T14 Auto Refresh Activate Command ...
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... IC42S32800 IC42S32800L Figure 4.Power on Sequene and Auto Refresh (CBR CLK High level CKE is required CS RAS CAS WE BS0, 1 A10 ADD DQM High Level is Necessary t RP Hi-Z DQ Precharge 1st Auto Command Refresh Inputs All Banks Command must be stable for 200us Integrated Circuit Solution Inc ...
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... IC42S32800 IC42S32800L Figure 5.Self Refresh Entry &Exit Cycle CLK *Note 2 *Note 1 CKE t IS CS# RAS# *Note 8 CAS# BS0,1 A0-A9 WE# DQM Hi-Z DQ SelfRefresh Enter Note:To Enter SelfRefresh Mode 1. CS#,RAS#&CAS#with CKE should be low at the same clock cycle. 2. After 1 clock cycle,all the inputs including the system clock can be don ’t care except for CKE. ...
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... IC42S32800 IC42S32800L Figure 6.2.Clock Suspension During Burst Read (Using CKE) (Burst Length=4,CAS#Latency= CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 CAx RAx DQM Hi-Z DQ Ax0 Activate Read Command Command Bank A Bank A Note:CKE to CLK disable/enable =1 clock Integrated Circuit Solution Inc. ...
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... IC42S32800 IC42S32800L Figure 6.3.Clock Suspension During Burst Read (Using CKE) (Burst Length=4,CAS#Latency= CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 CAx RAx DQM DQ Hi-Z Hi-Z Read Activate Command Command Bank A Bank A Note:CKE to CLK disable/enable =1 clock T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 ...
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... IC42S32800 IC42S32800L Figure 7.2.Clock Suspension During Burst Write (Using CKE) (Burst Length=4,CAS#Latency= CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx DQM Hi-Z DQ DAx0 Clock Suspend Activate 1 Cycle Command Bank A Write Command Bank A Note:CKE to CLK disable/enable =1 clock Integrated Circuit Solution Inc ...
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... IC42S32800 IC42S32800L Figure 7.3.Clock Suspension During Burst Write (Using CKE) (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx ...
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... IC42S32800 IC42S32800L Figure 8.Power Down Mode and Clock Mask (Burst Lenght=4, CAS#Latency= CLK t CK2 t IS CKE CS# RAS# CAS# WE# BS0,1 RAx A10 A0-A9 RAx DQM Hi-Z DQ ACTIVE STANDBY Activate Command Bank A Power Down Power Down Mode Entry Mode Exit Integrated Circuit Solution Inc. ...
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... IC42S32800 IC42S32800L Figure 9.2.Random Column Read (Page within same Bank) (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BA0,1 A10 RAw A0-A9 CAw RAw ...
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... IC42S32800 IC42S32800L Figure 9.3.Random Column Read (Page within same Bank) (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAw A0-A9 RAw CAw ...
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... IC42S32800 IC42S32800L Figure 10.2.Random Column Write (Page within same Bank) (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 RBw A10 A0-A9 RBw CBw ...
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... IC42S32800 IC42S32800L Figure 10.3.Random Column Write (Page within same Bank) (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RBw A0-A9 CBw RBw ...
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... IC42S32800 IC42S32800L Figure 11.3.Random Row Read (Interleaving Banks) (Burst Length=8,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 RBx A10 RBx CBx A0- RCD ...
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... IC42S32800 IC42S32800L Figure 12.1.Random Row Write (Interleaving Banks) (Burst Length=8,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK1 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx t RCD ...
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... IC42S32800 IC42S32800L Figure 12.2.Random Row Write (Interleaving Banks) (Burst Length=8,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE High CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx t RCD ...
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... IC42S32800 IC42S32800L Figure 12.3.Random Row Write (Interleaving Banks) (Burst Length=8,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RAx CAx A0-A9 t RCD ...
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... IC42S32800 IC42S32800L Figure 13.2.Read and Write Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx DQM Hi-Z DQ Read Activate ...
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... IC42S32800 IC42S32800L Figure 13.3.Read and Write Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 CAx RAx DQM Hi-Z DQ Activate Read ...
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... IC42S32800 IC42S32800L Figure 14.2.Interleaving Column Read Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 RAx A10 A0-A9 RAx CAy t t RCD AC2 ...
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... IC42S32800 IC42S32800L Figure 14.3.Interleaved Column Read Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 RAx A10 RAx CAx A0-A9 t RCD DQM DQ Hi-Z Read ...
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... IC42S32800 IC42S32800L Figure 15.2.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 RAx A10 RAx CAx A0-A9 t RCD DQM t RRD ...
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... IC42S32800 IC42S32800L Figure 15.3.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE CS# RAS# CAS# WE# BS0,1 RAx RBw A10 RAx CAx RBw A0-A9 t RCD ...
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... IC42S32800 IC42S32800L Figure 16.2.Auto Precharge after Read Burst (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 High CKE CS# RAS# CAS# WE# BS0,1 RAx RBx A10 RBx RAx ...
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... IC42S32800 IC42S32800L Figure 16.3.Auto Precharge after Read Burst (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBx CAx RAx ...
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... IC42S32800 IC42S32800L Figure 17.2.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 High CKE CS# RAS# CAS# WE# BS0,1 RAx RBx A10 A0-A9 CAx RAx ...
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... IC42S32800 IC42S32800L Figure 17.3.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 RBx RAx A9 A0-A9 RAx RBx CAx ...
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... IC42S32800 IC42S32800L Figure 18.2.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 High CKE CS# RAS# CAS# WE# BS0,1 RBx RAx A10 A0-A9 RAx CAx RBx ...
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... IC42S32800 IC42S32800L Figure 18.3.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 RAx A10 A0-A9 RAx CAx DQM DQ Hi-Z Read ...
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... IC42S32800 IC42S32800L Figure 19.2.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 High CKE CS# RAS# CAS# WE# BS0,1 RAx RBx A10 A0-A9 RAx CAx RBx ...
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... IC42S32800 IC42S32800L Figure 19.3.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 CKE High CS# RAS# CAS# WE# BS0,1 RAx A10 RAx CAx A0-A9 DQM Hi-Z DQ DAx ...
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... IC42S32800 IC42S32800L Figure 20.Byte Write Operation (Burst Length=4,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 High CKE CS# RAS# CAS# WE# BS0,1 A10 RAx A0-A9 RAx CAx DQM0 DQM1,2,3 DQ0 - DQ7 ...
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... IC42S32800 IC42S32800L Figure 22.Full Page Random Column Read (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 A10 RAx RBx RAx RBx CAx CBx CAy ...
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... IC42S32800 IC42S32800L Figure 23.Full Page Random Column Write (Burst Length=Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE CS# RAS# CAS# WE# BS0,1 RAx RBx A10 A0-A9 RAx RBx CAx ...
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... IC42S32800 IC42S32800L Figure 24.2.Precharge Termination of a Burst (Burst Length=8 or Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK2 CKE High CS# RAS# CAS# WE# BS0,1 RAx A10 RAx CAx A0-A9 DQM ...
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... IC42S32800 IC42S32800L Figure 24.3.Precharge Termination of a Burst (Burst Length=4,8 or Full Page,CAS#Latency= T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 CLK t CK3 High CKE CS# RAS# CAS# WE# BS0,1 RAx A10 RAx CAx A0-A9 DQM ...
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... IC42S32800/L-6B 143MHz 7 IC42S32800/L-7T 143MHz 7 IC42S32800/L-7B ORDERING INFORMATION Industrial Temperature Range: - Frequency Speed (ns) Order Part No. 166MHz 6 IC42S32800/L-6TI 166MHz 6 IC42S32800/L-6BI 143MHz 7 IC42S32800/L-7TI 143MHz 7 IC42S32800/L-7BI Integrated Circuit Solution Inc. DR046-0B 12/21/2004 Package 400mil TSOP-2 8*13mm BGA 400mil TSOP-2 ...
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... IC42S32800/L-7TG 143MHz 7 IC42S32800/L-7BG ORDERING INFORMATION (Pb-free Package) Industrial Temperature Range: - Frequency Speed (ns) Order Part No. 166MHz 6 IC42S32800/L-6TIG 400mil TSOP-2 166MHz 6 IC42S32800/L-6BIG 143MHz 7 IC42S32800/L-7TIG 400mil TSOP-2 143MHz 7 IC42S32800/L-7BIG NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, 62 Package ...