m464s1654bt1-l1l Samsung Semiconductor, Inc., m464s1654bt1-l1l Datasheet

m464s1654bt1-l1l

Manufacturer Part Number

m464s1654bt1-l1l

Description

7-unit 500ma Source Type Darlington Transistor Array With Clamp Diode

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.M464S1654BT1-L1L.pdf (5 pages)

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DESCRIPTION

M63800FP is a seven-circuit output-sourcing Darlington

transistor array. The circuits are made of PNP and NPN tran-

sistors. This semiconductor integrated circuit performs high-

current driving with extremely low input-current supply.

FEATURES

APPLICATION

Drives of relays, printers, LEDs, fluorescent display tubes

and lamps, and interfaces between MOS-bipolar logic sys-

tems and relays, solenoids, or small motors

FUNCTION

The M63800FP has seven circuits, which are made of input

inverters and current-sourcing outputs. The outputs are

made of PNP transistors and NPN Darlington transistors.

The PNP transistor base current is constant. A spike-killer

clamping diode is provided between each output pin and

GND. V

the eight circuits.

The input has resistance of 3k , and a maximum of 10V can

be applied. The output current is 500mA maximum. Supply

voltage V

The M63800FP is enclosed in a molded small flat package,

enabling space-saving design.

ABSOLUTE MAXIMUM RATINGS

# : Unused I/O pins must be connected to GND.

High breakdown voltage (BV

High-current driving (Io(max) = –500mA)

With output clamping diodes

Driving available with CMOS IC output of 6-16V or with TTL output

Wide operating temperature range (Ta = –20 to +75 C)

Output current-sourcing type

Symbol

opr

stg

CEO

(pin 8) and GND (pin 9) are used commonly among

is 50V maximum.

Collector-emitter voltage

Supply voltage

Input voltage

Output current

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Operating temperature

Storage temperature

7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Parameter

CEO

(Unless otherwise noted, Ta = –20 ~ +75 C)

50V)

Output, L

Current per circuit output, H

Ta = 25 C, when mounted on board

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

Conditions

PIN CONFIGURATION

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and cannot

be used.

INPUT

The seven circuits share the V

IN1

IN2

IN3

IN4

IN5

IN6

IN7

Package type 16P2N-A

20K

1.5K

7.2K

M63800FP

–55 ~ +125

–0.5 ~ +50

–0.5 ~ +10

–20 ~ +75

Ratings

–500

1.00

and GND.

GND

OUTPUT

Unit :

OUTPUT

GND

Aug. 1999

Unit

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m464s1654bt1-l1l Summary of contents

Page 1

SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN tran- sistors. This semiconductor integrated circuit performs high- current driving with extremely low ...

Page 2

SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol Parameter V Supply voltage S Output current Duty Cycle (Current per 1 cir- no more than cuit when 7 circuits Duty Cycle are ...

Page 3

SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 1.5 1.0 0 Ambient temperature Ta (°C) Duty-Cycle-Output Current Characteristics –500 –400 –300 –200 •The output current values represent ...

Page 4

SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics 1 20V 75°C 0 25° –20°C 0.6 0.4 0 Input voltage V (V) ...

Page 5

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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