m464s3323bn0 Samsung Semiconductor, Inc., m464s3323bn0 Datasheet - Page 4
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m464s3323bn0
Manufacturer Part Number
m464s3323bn0
Description
144pin Sdram Sodimm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M464S3323BN0.pdf
(9 pages)
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
M464S3323BN0
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK1)
CS (CS0 ~ CS1)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Shrink-TSOP
Symbol
DD
C
IN
C
C
C
C
C
T
C
DQM
ADD
CKE
OUT
, V
I
CLK
, V
P
STG
CS
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
REF
OUT
-
DDQ
SS
= 1.4V
= 0V, T
3ns.
3ns.
A
200 mV)
= 0 to 70 C)
Typ
3.3
3.0
0
-
-
-
Min
40
40
20
20
20
5
8
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
144pin SDRAM SODIMM
Max
3.6
0.8
0.4
Value
10
-
16
50
+0.3
Max
80
80
40
32
40
10
13
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3