m393t1k66aza Samsung Semiconductor, Inc., m393t1k66aza Datasheet - Page 14
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m393t1k66aza
Manufacturer Part Number
m393t1k66aza
Description
240pin Registered Module Based On 2gb A-die 72-bit Ecc
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M393T1K66AZA.pdf
(19 pages)
12.0 Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Address, RAS,CAS,WE
Input/output capacitance, DQ, DM, DQS, DQS
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
RDIMM
Refresh to active/Refresh command time
Average periodic refresh interval
Bin
(0 °C < T
(CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
Part-Number
Parameter
< 95 °C; V
DDQ
= 1.8V + 0.1V; V
3.75
min
2.5
15
15
60
45
3
-
DDR2-800(F7)
tREFI
6 - 6 - 6
Symbol
CCK
CIO
CI1
CI2
DD
85 °C < T
0 °C ≤ T
= 1.8V + 0.1V)
Symbol
tRFC
70000
max
8
8
8
-
-
-
-
CASE
CASE
14 of 19
Min
-
-
-
-
M393T1K66AZA
≤ 85°C
≤ 95°C
256Mb
Max
11
12
12
10
7.8
3.9
75
3.75
min
15
15
60
45
5
3
-
512Mb
105
7.8
3.9
DDR2-667(E6)
5 - 5 - 5
Min
-
-
-
-
M393T5263AZA
127.5
1Gb
7.8
3.9
Rev. 1.2 August 2008
(V
DD
DDR2 SDRAM
70000
=1.8V, V
max
8
8
8
-
-
-
-
2Gb
Max
195
7.8
3.9
11
12
12
10
DDQ
327.5
4Gb
=1.8V, T
7.8
3.9
Units
pF
Units
A
Units
ns
ns
ns
ns
ns
ns
ns
ns
=25
ns
µs
µs
o
C)