m470t2864qz3 Samsung Semiconductor, Inc., m470t2864qz3 Datasheet - Page 13

• Manufacturer Part Number: m470t2864qz3
• Description: Ddr2 Unbuffered Sodimm
• Manufacturer: Samsung Semiconductor, Inc.

11.0 Operating Current Table :
11.1 M470T5663QZ(H)3 : 256Mx64 2GB Module
11.2 M470T2864QZ(H)3 : 128Mx64 1GB Module
11.3 M470T6464QZ(H)3: 64Mx64 512MB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
SODIMM
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
Symbol
Symbol
Symbol
IDD4W
IDD4W
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD2P
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CE7
CE7
CE7
240
240
120
120
60
60
800@CL=5
800@CL=5
800@CL=5
1,200
1,360
1,440
2,280
1,200
1,060
880
960
480
560
560
288
720
500
540
240
280
280
144
360
660
840
720
360
400
120
140
140
220
520
700
580
72
LE7
LE7
LE7
128
128
64
64
32
32
CF7
CF7
CF7
240
240
120
120
60
60
800@CL=6
800@CL=6
800@CL=6
1,200
1,360
1,440
2,280
1,200
1,060
880
960
480
560
560
288
720
500
540
240
280
280
144
360
660
840
720
360
400
120
140
140
220
520
700
580
72
13 of 19
LF7
LF7
LF7
128
128
64
64
32
32
CE6
CE6
CE6
240
240
120
120
60
60
667@CL=5
667@CL=5
667@CL=5
1,120
1,240
1,400
2,120
1,120
840
920
480
560
560
288
680
480
520
240
280
280
144
340
600
760
700
340
380
120
140
140
200
460
620
560
980
72
LE6
LE6
LE6
128
128
64
64
32
32
DDR2 SDRAM
Rev. 1.1 July 2008
Units
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(T
(T
(T
A
A
A
=0
=0
=0
o
o
o
C, V
C, V
C, V
DD
DD
DD
Notes
Notes
Notes
= 1.9V)
= 1.9V)
= 1.9V)