m395t5263az4-ce68 Samsung Semiconductor, Inc., m395t5263az4-ce68 Datasheet - Page 4

• Manufacturer Part Number: m395t5263az4-ce68
• Description: Ddr2 Fully Buffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

FBDIMM
Table 2 : Performance range
Table 3 : Address Configuration
1.0 FEATURES
Table 1 : Ordering Information
Note :
1. “Z” of Part number(11th digit) stands for Lead-free products.
2. The last digit stands for AMB.
DDR2 DRAM Speed
CL-tRCD-tRP
512Mx4(2Gb) based Module
256Mx8(2Gb) based Module
M395T5263AZ4-CE66/F76
M395T5263AZ4-CE68/F78
M395T1K66AZ4-CE66/F76
M395T1K66AZ4-CE68/F78
- 240pin fully buffered dual in-line memory module (FB-
- 3.2Gb/s, 4.0Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM V
- 1.5V +0.075/-0.045V Power Supply for AMB V
- 3.3V +/- 0.3V Power Supply for V
- Buffer Interface with high-speed differential point-to-
- Channel error detection & reporting
- Channel fail over mode support
DIMM)
point Link at 1.5 volt
Part Number
Organization
Density
4GB
4GB
8GB
8GB
F7(DDR2-800)
6-6-6
800
DDSPD
Organization
Row Address
512M x 72
512M x 72
1G x 72
1G x 72
A0-A14
A0-A14
DD
/V
DDQ
CC
st. 1Gx4(K4T4G264QA) *18EA
st. 1Gx4(K4T4G264QA) *18EA
256Mx8(K4T2G084QA) *18EA
256Mx8(K4T2G084QA) *18EA
Component Composition
4 of 29
Column Address
A0-A9, A11
A0-A9
- Serial presence detect with EEPROM
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5, 6
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
E6(DDR2-667)
5-5-5
667
Number of
Rank
Bank Address
2
2
2
2
BA0-BA2
BA0-BA2
IDT C1
IDT C1
IDT L4
IDT L4
AMB
Rev. 1.03 April 2008
DDR2 SDRAM
Type of Heat
Full Module
Full Module
Full Module
Full Module
Spreader
Auto Precharge
Mbps
Unit
CK
A10
A10
30.35mm
30.35mm
30.35mm
30.35mm
Height