ace2303 ACE Technology Co., LTD., ace2303 Datasheet

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ace2303

Manufacturer Part Number
ace2303
Description
P-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
Description
using high cell density, DMOS trench technology.
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
Application
Absolute Maximum Ratings
(T
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T
The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
A
=25℃ Unless otherwise noted)
-30V/-2.6A, R
-30V/-2.0A, R
Super high density cell design for extremely low R
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Thermal Resistance-Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
Power Dissipation
Drain-Source Voltage
Pulsed Drain Current
Gate-Source Voltage
DS(ON)
DS(ON)
Parameter
=130mΩ@V
=180mΩ@V
Technology
J
=150℃)
GS
GS
=-10V
=-4.5V
T
T
T
T
A
A
A
A
=25℃
=70℃
=25℃
=70℃
P-Channel Enhancement Mode MOSFET
Symbol Typical Unit
V
V
R
T
I
P
T
GSS
I
DM
I
STG
DSS
θ
D
S
D
J
JA
DS(ON)
-55/150 ℃
-1.25
1.25
-3.0
-2.0
150
100
-30
±20
-10
0.8
℃/W
W
V
V
A
A
A
ACE2303
VER 1.2
1

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ace2303 Summary of contents

Page 1

... Description The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... Packaging Type SOT-23 Ordering information Selection Guide ACE2303 free BM: SOT-23-3 Technology P-Channel Enhancement Mode MOSFET Pin Description Gate Source Drain ACE2303 VER 1.2 2 ...

Page 3

... GS D =±20V GS =0V GS =0V T =55℃ =-10V -6 GS =-2.6A 0.095 0.130 D =-2.0A 0.125 0.180 D =-1.7A D =0V -0.8 GS =-10V, GS ≣-1.7A D 226 =0V, GS f=1MHz =15Ω L =-10V GEN R =6Ω G ACE2303 Max. Unit V -3.0 ±100 -10 A Ω 2.4 S -1.2 V 5.8 10 0 VER 1.2 3 ...

Page 4

... Technology Typical Characteristics Output Characteristics V – Drain to Source Voltage (V) DS On-Resistance vs. Drain Current I – Drain Current (A) D P-Channel Enhancement Mode MOSFET Transfer Characteristics V – Gate to Source Voltage (V) GS Capacitance V – Drain to Source Voltage (V) DS ACE2303 VER 1.2 4 ...

Page 5

... Typical Characteristics Gate Charge O Total Gate Charge (nC) q Source-Drain Diode Forward Voltage V Source to Drain Voltage (V) SD Technology P-Channel Enhancement Mode MOSFET On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage T – Junction Temperature (℃ – Gate to Source Voltage (V) GS ACE2303 VER 1.2 5 ...

Page 6

... Typical Characteristics Threshold Voltage T – Temperature J Normalized Thermal Transient Impedance, Junction-to-Ambient Technology P-Channel Enhancement Mode MOSFET Square Wave Pulse Duration(sec) Single Pulse Power Time(sec) ACE2303 VER 1.2 6 ...

Page 7

... Packing Information SOT-23-3 Technology P-Channel Enhancement Mode MOSFET ACE2303 VER 1.2 7 ...

Page 8

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Technology P-Channel Enhancement Mode MOSFET Notes ACE Technology Co., LTD. http://www.ace-ele.com/ ACE2303 VER 1.2 8 ...

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