m366s3323ftu-c7a Samsung Semiconductor, Inc., m366s3323ftu-c7a Datasheet - Page 11
![no-image](/images/no-image-200.jpg)
m366s3323ftu-c7a
Manufacturer Part Number
m366s3323ftu-c7a
Description
Sdram Unbuffered Module
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M366S3323FTU-C7A.pdf
(26 pages)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
64MB, 128MB, 256MB Unbuffered DIMM
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V dV
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is d 3ns.
(max) = 5.6V AC.The overshoot voltage duration is d3ns.
supply relative to Vss
Parameter
0
0
Pin
(V
~ A
~ A
DD
11
11
IN
)
)
= 3.3V, T
dV
DDQ
A
.
Symbol
= 23qC, f = 1MHz, V
V
V
V
V
V
I
DD
OH
OL
LI
IH
IL
Sym-
Sym-
C
C
C
C
C
C
C
C
C
C
C
C
C
C
bol
bol
OUT
OUT
IN1
IN2
IN3
IN4
IN5
IN6
IN1
IN2
IN3
IN4
IN5
IN6
V
V
Symbol
DD
IN
Min
-0.3
T
3.0
2.0
2.4
-10
, V
I
P
, V
-
STG
OS
REF
D
OUT
DDQ
M366S0924FTS
SS
Min
15
15
15
10
10
8
9
= 1.4Vr200 mV)
= 0V, T
Min
M374S1723FTS(U)
28
28
28
18
18
8
9
A
Typ
3.3
Max
3.0
= 0 to 70qC)
0
25
25
25
13
15
10
12
-
-
-
Max
M366S1723FTS(U)
50
50
50
25
30
10
12
1.0 * # of component
Min
25
25
25
15
15
V
8
9
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
Max
45
45
45
21
25
12
12
Min
M374S3323FTS(U)
50
50
28
18
18
13
13
Unit
uA
M366S3323FTS(U)
V
V
V
V
V
Rev. 1.3 May 2004
Min
45
45
25
15
15
10
13
Max
95
95
50
25
30
20
18
Max
85
85
45
21
25
15
18
I
OH
I
SDRAM
OL
Unit
mA
qC
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF