m366s1654cts Samsung Semiconductor, Inc., m366s1654cts Datasheet - Page 4

• Manufacturer Part Number: m366s1654cts
• Description: 16mx64 Sdram Dimm Based 16mx16, 4banks, Refresh, 3.3v Synchronous Drams With
• Manufacturer: Samsung Semiconductor, Inc.

Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
M366S1654CTS
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0)
Clock (CLK0, CLK2)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
C
C
IN
C
C
T
C
DQM
ADD
CKE
OUT
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
-10
3.0
2.0
2.4
D
REF
-
OUT
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
PC133/PC100 Unbuffered DIMM
3.3
3.0
0
-
-
-
Min
15
15
15
10
10
8
9
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
4
Max
25
25
25
13
15
10
12
Rev. 0.1 Sept. 2001
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
V
V
Unit
Note
C
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3