m366s1723dts Samsung Semiconductor, Inc., m366s1723dts Datasheet - Page 4

• Manufacturer Part Number: m366s1723dts
• Description: Pc133/pc100 Unbuffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

Note :
Notes :
ABSOLUTE MAXIMUM RATINGS
Recommended operating conditions (Voltage referenced to V
DC OPERATING CONDITIONS AND CHARACTERISTICS
CAPACITANCE
M366S1723DTS
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0)
Clock (CLK0, CLK2)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
Parameter
supply relative to Vss
Pin
(V
V
DD
IN
= 3.3V, T
V
DDQ.
A
V
= 23 C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
C
C
IN
C
C
T
C
DQM
ADD
OUT
CKE
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
-
OUT
REF
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
= 0 to 70 C)
200 mV)
Typ
PC133/PC100 Unbuffered DIMM
3.3
3.0
0
-
-
-
Min
25
25
25
15
15
8
9
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
10
Value
-
+0.3
50
8
Max
45
45
45
21
25
12
12
Rev. 0.1 Sept. 2001
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3