apm8005k Anpec Electronics Corporation, apm8005k Datasheet - Page 2

• Manufacturer Part Number: apm8005k
• Description: Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Anpec Electronics Corporation

APM8005K
Absolute Maximum Ratings
Electrical Characteristics
Copyright
Rev. A.1 - Dec., 2009
Static Characteristics
Diode Characteristics
Note：*Surface Mounted on 1in
Symbol
Symbol
R
BV
V
R
V
V
I
T
DS(ON)
I
V
SM
P
E
I
I
I
DM
I
GS(th)
T
Q
DSS
GSS
GSS
STG
DSS
D
S
t
SD
AS
D
JA
rr
DSS
*
J
*
**
rr
*
*
a
*
a
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Pulse Source Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy, L=0.1mH
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ANPEC Electronics Corp.
Parameter
2
pad area, t
Parameter
10sec.
(T
V
V
V
V
V
V
I
I
A
SD
SD
GS
DS
DS
GS
GS
GS
(T
= 25 C Unless Otherwise Noted)
=2.5A, V
=2.5A, dI
=0V, I
=64V, V
=V
=±25V, V
=10V, I
=5V, I
A
2
Test Conditions
= 25 C Unless Otherwise Noted)
GS
, I
V
T
T
DS
DS
DS
A
A
DS
GS
GS
=250 A
GS
=4.5A
SD
=25°C
=100°C
=250 A
=4.7A
=10V
DS
=0V
=0V
/dt=100A/ s
=0V
T
J
=85°C
Min.
80
1
-
-
-
-
-
-
-
-
APM8005K
-55 to 150
Rating
62.5
16.3
Typ.
0.75
±25
150
4.7
2.5
0.8
80
18
18
45
55
36
30
2
-
-
-
-
-
www.anpec.com.tw
Max.
±100
1.1
30
57
72
1
3
-
-
-
°C/W
Unit
Unit
m
mJ
nC
°C
nA
W
ns
V
A
V
V
V
A