bss63l ON Semiconductor, bss63l Datasheet - Page 2

• Manufacturer Part Number: bss63l
• Description: High Voltage Pnp Transistor
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Collector −Emitter Breakdown Voltage
(I
Collector −Emitter Breakdown Voltage
(I
Collector −Base Breakdown Voltage
(I
Emitter −Base Breakdown Voltage
(I
Collector Cutoff Current
(V
Collector Cutoff Current
(V
Emitter Cutoff Current
(V
DC Current Gain
(I
(I
Collector −Emitter Saturation Voltage
(I
Base −Emitter Saturation Voltage
(I
Current −Gain − Bandwidth Product
(I
Case Capacitance
(I
C
C
E
E
C
C
C
C
C
E
CB
CE
EB
= −10 mAdc, I
= −10 mAdc)
= I
= −100 mAdc)
= −10 mAdc, I
= −10 mAdc, V
= −25 mAdc, V
= −25 mAdc, I
= −25 mAdc, I
= −25 mAdc, V
= −90 Vdc, I
= −110 Vdc, R
= −6.0 Vdc, I
C
= 0, V
CB
E
E
= −10 Vdc, f = 1.0 MHz)
B
B
E
C
CE
CE
CE
= 0, R
= 0)
= −2.5 mAdc)
= −2.5 mAdc)
= 0)
BE
= 0)
= −1.0 Vdc)
= −1.0 Vdc)
= −5.0 Vdc, f = 20 MHz)
= 10 kW)
BE
= 10 kW)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
(BR)CEO
(BR)CER
(BR)CBO
(BR)EBO
I
CE(sat)
I
I
BE(sat)
h
CBO
CER
EBO
C
f
FE
T
C
−100
−110
−110
−6.0
Min
30
30
50
−
−
−
−
−
−
Typ
95
−
−
−
−
−
−
−
−
−
−
−
−
−100
−200
−250
−900
Max
−10
20
−
−
−
−
−
−
−
mVdc
mVdc
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−