dmp3130l Diodes, Inc., dmp3130l Datasheet - Page 3

• Manufacturer Part Number: dmp3130l
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMP3130L
Document number: DS31524 Rev. 2 - 2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.5
1.2
0.9
0.6
0.3
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
-50
0
Fig. 5 On-Resistance Variation with Temperature
-25
-25
T , AMBIENT TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
A
J
vs. Drain Current and Gate Voltage
2
0
Fig. 3 Typical On-Resistance
0
-I , DRAIN CURRENT (A)
D
25
25
V
4
GS
= -2.5V
50
50
V
V
V
GS
I = -4.5A
GS
GS
D
= -4.5V
= -10V
= -4.5V
75
6
75
100
V
I = -250µA
D
GS
100
I = -2A
D
= -2.5V
8
125 150
125 150
10
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1,000
0.01
0.14
0.12
0.10
0.08
0.06
0.04
0.02
100
0.1
10
10
1
0
0.5
0
0
Fig. 4 Typical Drain-Source On-Resistance
V
f = 1MHz
Fig. 8 Diode Forward Voltage vs. Current
GS
-V , SOURCE-DRAIN VOLTAGE (V)
-V , DRAIN-SOURCE VOLTAGE (V)
= 0V
5
vs. Drain Current and Temperature
0.6
SD
DS
2
Fig. 6 Typical Capacitance
-I , DRAIN CURRENT (A)
D
10
0.7
4
15
T = 125°C
T = 150°C
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
A
T = 25°C
0.8
A
6
20
C
iss
0.9
C
DMP3130L
rss
8
C
25
oss
© Diodes Incorporated
February 2009
30
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