hyb5117800bsj-70 Infineon Technologies Corporation, hyb5117800bsj-70 Datasheet

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hyb5117800bsj-70

Manufacturer Part Number
hyb5117800bsj-70
Description
2m X 8-bit Dynamic Ram
Manufacturer
Infineon Technologies Corporation
Datasheet
2M x 8-Bit Dynamic RAM
Advanced Information
Semiconductor Group
2 097 152 words by 8-bit organization
0 to 70 °C operating temperature
Performance::
Single + 5 V ( 10 %) supply
Low power dissipation
max. 660 active mW (-50 version)
max. 605 active mW (-60 version)
max. 550 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (CMOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms
Plastic Package:
t
t
t
t
t
RAC
CAC
AA
RC
PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
P-SOJ-28-3 400 mil
1
-50
50
13
25
90
35
110
-60
60
15
30
40
HYB5117800BSJ-50/-60/-70
130
-70
70
20
35
45
ns
ns
ns
ns
ns
1.96

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hyb5117800bsj-70 Summary of contents

Page 1

... Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, • self refresh and test mode Fast page mode capability • All inputs, outputs and clocks fully TTL-compatible • 2048 refresh cycles / 32 ms • Plastic Package: P-SOJ-28-3 400 mil • Semiconductor Group HYB5117800BSJ-50/-60/-70 -50 -60 - ...

Page 2

... Column Address Strobe WE Read/Write Input V Power Supply (+ Ground ( N.C. not connected Semiconductor Group HYB 5117800BSJ-50/-60/-70 Package Descriptions P-SOJ-28-3 400 mil DRAM (access time 50 ns) P-SOJ-28-3 400 mil DRAM (access time 60 ns) P-SOJ-28-3 400 mil DRAM (access time 70 ns 8-DRAM ...

Page 3

... Pin Configuration Semiconductor Group P-SOJ-28-3 (400mil VCC RAS A10 VCC HYB 5117800BSJ-50/-60/- 8-DRAM VSS I/O8 I/O7 I/O6 I/O5 CAS VSS ...

Page 4

... Row 11 Address Buffers(11) No. 1 Clock RAS Generator Block Diagram Semiconductor Group HYB 5117800BSJ-50/-60/-70 I I/O1 /O2 Data in Buffer 8 Column 10 Decoder Sense Amplifier I/O Gating Row Memory Array 2048 11 Decoder 2048x1024x8 Voltage Down Generator 8-DRAM I /O8 Data out OE Buffer 8 8 1024 x8 VCC VCC (internal) ...

Page 5

... I(L) I O(L) Vcc + 0.3V) I CC1 = t min CC2 I CC3 = t min HYB 5117800BSJ-50/-60/- 8-DRAM Limit Values Unit Test Condition min. max. 1) 2.4 Vcc+0 – 0.5 0 2.4 – – 0 – – – ...

Page 6

... Symbol I CC4 = t ) min CC5 I CC6 .) min I CC7 MHz Symbol HYB 5117800BSJ-50/-60/- 8-DRAM Limit Values Unit Test Condition min. max – – – – – 120 – ...

Page 7

... OEA 25 – 30 RAL 0 – RCS t 0 – 0 RCH 0 – RRH 0 – CLZ OFF 8-DRAM Unit Note -60 -70 max. min. max. – 130 – ns – 50 – ns 10k 70 10k ns 10k 20 10k ns – 0 – ns – 10 – ns – 0 – ...

Page 8

... CWD 43 – AWD 13 – t OEH 35 – – CP – 30 CPA 50 200k 60 t RAS t 30 – RHPC 8 HYB 5117800BSJ-50/-60/- 8-DRAM Limit Values -60 -70 max. min. max – 0 – 15 – 20 – 15 – 20 – 10 – 10 – 10 – 10 – 0 – ...

Page 9

... WRH t 35 – CPT t 30 – CHRT 10 – t WTS 10 – t WTH 100k _ t RASS RPS - CHS 9 HYB 5117800BSJ-50/-60/- 8-DRAM Limit Values -60 -70 max. min. max. 80 – 95 – 55 – 65 – 10 – 10 – 10 – 10 – 5 – 5 – 10 – 10 – 10 – ...

Page 10

... CAS leading edge in early write cycles and to the WE leading edge in read-write cycles. 17)When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM operation: If row addresses are being refreshed on an evenly distributed manner over the refresh interval using CBR refresh cycles, then only one CBR cycle must be performed immediately after exit from Self Refresh. If row addresses are being refreshed in any other manner (ROR - Distributed/Burst ...

Page 11

... CAC t CLZ AAAA AA AA AAAA AAAA AA AAAA Valid Data Out AAAA AA AAAA AA AAAA AA AA AAAA t RAC 11 HYB 5117800BSJ-50/-60/- 8-DRAM CRP t ASR AAAA AAAA AAAA AAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAA Row AAAA AAAA AAAA AAA ...

Page 12

... AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA Valid Data HYB 5117800BSJ-50/-60/- 8-DRAM CRP t ASR AAAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAAA AAA ...

Page 13

... OEA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA Hi-Z AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA 13 HYB 5117800BSJ-50/-60/- 8-DRAM CRP t ASR AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...

Page 14

... AAAA A AAAA AAAA A t CLZ t CAC AAAA AA AAAA AA AAAA AA AA Data AAAA AAAA AA Out AAAA AA t RAC 14 HYB 5117800BSJ-50/-60/- 8-DRAM RSH t CRP t CAS t ASR AAAA AAAA AAAA AAAA AAAA AAAA AAA AAAA AAAA AAAA AAAA AAAA AAAA AAA AAAA ...

Page 15

... CLZ CLZ AAAA A A AAAA AAAA AAAA AAAA A AAAA Valid AAAA A A AAAA AAAA AAAA Data Out AAAA A AAAA AAAA A AAAA 15 HYB 5117800BSJ-50/-60/- 8-DRAM RHCP t RSH t CRP t CAS t CAH t ASC AAAA AAAA A AAAA AAAA AAA AAAA AAAA A AAAA AAAA ...

Page 16

... AAAA AAAA A AAAA AAAA A AAAA AAAA A Valid Valid AAAA AAAA A A AAAA AAAA Data In Data In AAAA AAAA A A AAAA AAAA HI-Z 16 HYB 5117800BSJ-50/-60/- 8-DRAM RSH t t CAS CRP t RAL t t ASR CAH t ASC AAAA AAAA AA AAAA AAAA A AAAA AAAA AA AA ...

Page 17

... AAAA AAAA AAAA AA AA AAAA AA AA AAAA AA AAAA AAAA AAAA AA AA AAAA AA AA AAAA AA AA AAAA AAAA AAAA AAAA AA 17 HYB 5117800BSJ-50/-60/- 8-DRAM AAAA AA AAAA AA AA AAAA AAAA AA AA AAAA AAAA AA AAAA AA AA AAAA AAAA AA AAAA AA AAAA AA AAAA AA AA AAAA ...

Page 18

... Row AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA HI-Z 18 HYB 5117800BSJ-50/-60/- 8-DRAM CRP t RPC AAAA AAAA A AAAA AAAA A AAAA AAAA A AAAA AAAA A AAAA AAAA A AAAA AAAA A ...

Page 19

... AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA 19 HYB 5117800BSJ-50/-60/- 8-DRAM RPC AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...

Page 20

... CAC t CLZ t RAC AAAA A AAAA A AAAA A AAAA A Valid Data Out AAAA A AAAA A 20 HYB 5117800BSJ-50/-60/- 8-DRAM RAS t t CRP CHR t ASR WRH AAAA AAAA AAAA AAAA AAAA AAAA AAAA AA AAAA AAAA AAAA AAAA AAAA ...

Page 21

... AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA Valid Data AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA HI-Z 21 HYB 5117800BSJ-50/-60/- 8-DRAM RAS t t CHR CRP t ASR AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AA AAAA ...

Page 22

... AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA 22 HYB 5117800BSJ-50/-60/- 8-DRAM t RPS t CHS AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA ...

Page 23

... AAAA AAAA AAAA AAAA AAAA AAAA Data In AAAA AAAA AAAA AAAA AAAA AAAA AA AA AAAA AAAA AAAA AAAA AAAA AAAA HI-Z 23 HYB 5117800BSJ-50/-60/- 8-DRAM RSH t CAS t RAL t AAAA AAAA AAAA AAAA AAAA AAAA AAAA AA AAAA AAAA AAAA AAAA AAAA AAAA ...

Page 24

... AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA AAAA t CDD AAAA AAAA AAAA AAAA AAAA AAAA AAAA 24 HYB 5117800BSJ-50/-60/- 8-DRAM CRP RPC AAAA AAAA AAAA A A AAAA AAAA AAAA AAAA AAAA AAAA A A AAAA AAAA ...

Page 25

... RAS refresh”, “RAS only refresh” or “Hidden refresh” can be used. Refresh during test mode operation can be performed by normal read cycles or by WCBR refresh cylces. Row addresses A0 through A9 have to kept high to perform a testmode entry cycle. All other addresses are don’t care. Semiconductor Group HYB 5117800BSJ-50/-60/- 8-DRAM ...

Page 26

... Package Outlines Plastic Package P-SOJ-28-3 (400 mil) (Small Outline J-lead, SMD 1.27 0.81max 0.51 -0.13 0.18 28x 18.54 -0.25 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side Semiconductor Group 0 HYB 5117800BSJ-50/-60/- 8-DRAM 1) 10.16 +0.13 - 9.4 + 0.25 - 0.18 11.18 +0.13 - GPJ05699 M ...

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