hyb5117400bj-50 Infineon Technologies Corporation, hyb5117400bj-50 Datasheet

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hyb5117400bj-50

Manufacturer Part Number
hyb5117400bj-50
Description
4-bit Dynamic Refresh Fast Page Mode
Manufacturer
Infineon Technologies Corporation
Datasheet
• 4 194 304 words by 4-bit organization
• 0 to 70 C operating temperature
• Fast Page Mode operation
• Performance:
• Power Dissipation, Refresh & Addressing:
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1
4M
2k & 4k Refresh
(Fast Page Mode)
Advanced Information
Semiconductor Group
t
t
t
t
t
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
and test mode
RAC
CAC
AA
RC
PC
4-Bit Dynamic RAM
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
P-TSOPII-26/24-1 300 mil
HYB 5116400
275
-50
5 V
12/10
4096 cycles / 64 ms
5.5
11
10%
220
-60
HYB 3116400
3.3 V
180
-50
300 mil
-50
50
13
25
84
35
12/10
7.2
3.6
104 ns
-60
0.3 V
60
15
30
40
144
-60
1
ns
ns
ns
ns
HYB 5117400
440
-50
5 V
11/11
2048 cycles / 32 ms
5.5
11
HYB 3116400BJ/BT-50/-60
10%
385
-60
HYB 5116400BJ-50/-60
HYB 5117400BJ-50/-60
HYB 3117400BJ-50/-60
HYB 3117400
3.3 V
288
-50
11/11
7.2
3.6
0.3 V
252
-60
1998-10-01
mW
mW
mW

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hyb5117400bj-50 Summary of contents

Page 1

Dynamic RAM 2k & 4k Refresh (Fast Page Mode) Advanced Information • 4 194 304 words by 4-bit organization • operating temperature • Fast Page Mode operation • Performance: t RAS access time RAC ...

Page 2

... P-SOJ-26/24-1 300 mil P-SOJ-26/24-1 300 mil P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil P-TSOPII-26/24-1 300 mil DRAM Descriptions FPM-DRAM FPM-DRAM 3 FPM-DRAM 3 FPM-DRAM FPM-DRAM FPM-DRAM 3 FPM-DRAM 3 FPM-DRAM 3 FPM-DRAM 3 FPM-DRAM 1998-10-01 ...

Page 3

... P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil I/ I/ RAS 5 22 A11 / N. A10 SPP03454 3 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM V SS I/O4 I/O3 CAS 1998-10-01 ...

Page 4

... Block Diagram for HYB 5(3)116400 (4k-refresh) Semiconductor Group HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 I/O1 I/O2 I/O3 I/O4 Data IN Data OUT Buffer Buffer 4 10 Sense Amplifier I/O Gating 12 Row Memory Array 4096 Decoder 4096 x 1024 x 4 Voltage Down Generator DRAM OE 4 Column Decoder 4 1024 (internal) SPB03455 1998-10-01 ...

Page 5

... Row 11 Address Buffers (11) No.1 Clock RAS Generator Block Diagram for HYB 5(3)117400 (2k-refresh) Semiconductor Group I/O1 I/O2 Data In Buffer 11 11 Row Decoder 5 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM I/O3 I/O4 Data Out OE Buffer Column Decoder Sense Amplifier I/O Gating 2048 Memory Array 2048 ...

Page 6

... – – 100 A) OUT OH = 100 A) V OUT OL 6 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM V + 0.5, 7. 0.5, 4. Limit Values Unit Test Condition min. max. 4 – 0.5 0 2.4 – ...

Page 7

... I CC4 -50 ns version -60 ns version MIN. I CC5 I CC6 -50 ns version -60 ns version ) 7 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM Limit Values Unit Notes min. max – – – – ...

Page 8

... RSH t 50 CSH t 5 CRP – REF t – REF t – RAC t – CAC t – HYB 5116(7)400BJ-50/- DRAM Limit Values Unit max Limit Values Unit Note -60 – 110 – ns – 40 – ns 10k 60 10k ns 10k 15 ...

Page 9

... CWL DZC t 126 RWC t 68 RWD t 31 CWD t 43 AWD t 13 OEH 9 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM = 5 ns Limit Values Unit Note -50 -60 13 – – 30 – ns – 0 – ns – 0 – ns – 0 – ns – 0 – ...

Page 10

... RPC t 10 WRP t 10 WRH t 35 CPT t 30 CHRT t 10 WTS t 10 WTH t 30 RAHT 10 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM = 5 ns Limit Values Unit Note -50 -60 – 40 – ns – 10 – – 200k 60 200k ns – 35 – ns – ...

Page 11

... They are included in the CPWD t t WCS WCS (MIN and AWD AWD (MIN.) 11 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM I it can be changed once CC4 can be met specified as RCD (MAX.) t limit, then access time is RCD (MAX.) t can be met. is specified as RAD (MAX.) ...

Page 12

... RCD RSH t CAS t t RAD RAL t t CAH ASC Column t RAH t RCS OEA t DZC t DZO t CAC t CLZ Hi Z Valid Data OUT t RAC 12 HYB 5116(7)400BJ-50/- DRAM CRP t ASR Row t RCH t RRH t CDD t ODD t OFF t OEZ Hi Z SPT03025 1998-10-01 ...

Page 13

... Semiconductor Group HYB 3116(7)400BJ/BT-50/- RAS t CSH t t RCD RSH t CAS t t RAD RAL t t CAH ASC Column t CWL t WCS WCH t RWL Valid Data HYB 5116(7)400BJ-50/- DRAM CRP t ASR Row SPT03026 1998-10-01 ...

Page 14

... RCD RSH t CAS t t RAD RAL t t CAH ASC Column t CWL OEH t ODD t t DZO t t DZC DS Valid Data t OEZ t CLZ t OEA HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM CRP t ASR Row RWL SPT03027 1998-10-01 ...

Page 15

... Column RAD t AWD t CWD t RWD RCS t OEA t DZC t DZO t CAC t CLZ Data OUT t RAC 15 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RSH t CAS CRP t ASR Row t CWL t RWL OEH Valid Data IN t ODD t OEZ SPT03028 ...

Page 16

... OEA t DZC t DZO t DZO t ODD t OFF t OEZ t RAC t t CAC CAC t t CLZ CLZ Valid Data OUT 16 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM CRP t RHCP t RSH t CAS t CAH t ASC Column t RCS t RRH t CPA OEA OEA t DZC t DZO ...

Page 17

... CWL t CWL WCS t t WCH WCH Valid Valid Data IN Data HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RSH t CRP t CAS t RAL t CAH t t ASC ASR Column Row t RWL t t CWL WCS t WCH ...

Page 18

... ODD DZC Data IN Data CAC OEZ OEZ Data Data OUT OUT 18 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM t RSH t t CAS t RAL t CAH t ASC Column t t CPWD RWL t CWD t CWL t AWD OEA ...

Page 19

... RAS CAS ASR V IH Address I/O (Outputs "H" or "L" RAS-only Refresh Cycle Semiconductor Group RAS t RAH Row HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM CRP t RPC t ASR Row 1998-10-01 SPT03032 ...

Page 20

... ODD V IH I/O (Inputs CDD t OEZ V OH I/O (Outputs OFF "H" or "L" CAS-before-RAS Refresh Cycle Semiconductor Group t RAS t CHR t CSR t WRH t WRP 20 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RPC Hi Z 1998-10-01 t CRP SPT03033 ...

Page 21

... RCD RSH t WRP t CAH Column t RRH OEA t DZO t CAC t CLZ t RAC Valid Data OUT 21 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RAS t t CHR CRP t t WRH ASR t CDD t ODD t OFF t OEZ Hi Z 1998-10-01 Row SPT03034 ...

Page 22

... Hidden Refresh Early Write Cycle Semiconductor Group RAS RP t RSH t CAH Column t t WCH WRP Valid Data HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RAS CHR CRP t ASR WRH Row SPT03035 1998-10-01 ...

Page 23

... CAH t ASC Column CAC t t WRH RCS t OEA t DZC t DZO t CLZ t WCS t RWL t CWL t WCH t t WRH Data HYB 5116(7)400BJ-50/- DRAM t RP RSH t ASR Row t RRH t RCH t CDD t ODD t OFF t OEZ Data OUT SPT03036 1998-10-01 ...

Page 24

... IL t OEZ V OH I/O (Outputs OFF "H" or "L" Test Mode Entry Semiconductor Group RAS t CP CHR t CSR t RAH t ASR Row t WTH t WTS t CDD 24 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM RPC t CRP Hi Z SPT03042 1998-10-01 ...

Page 25

... Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 0.85 max 0.18 24x 0.1 M 15.24 0. -0.25 25 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM B 1) 7.75 -0.25 6.8 ±0.2 0.25 B 8.63 0. -0.25 Dimensions in mm 1998-10-01 ...

Page 26

... Does not include plastic or metal protrusion of 0.15 max per side Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 0.2 24x 0 ±0.13 26 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/- DRAM 7.62 ±0.13 0.6 -0.2 9.22 ±0.2 GPX05857 Dimensions in mm 1998-10-01 ...

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